Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks
Autor(a) principal: | |
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Data de Publicação: | 2007 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141706 |
Resumo: | The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies. |
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Edon, VincentLi, Z.Hugon, Marie-ChristineAgius, BernardKrug, CristianoBaumvol, Israel Jacob RabinDurand, OlivierEypert, Céline2016-05-24T02:10:48Z20070003-6951http://hdl.handle.net/10183/141706000656363The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies.application/pdfengApplied physics letters. Vol. 90, no. 12 (Mar. 2007), 122905, 3 p.Propriedades dielétricasCapacitoresFilmes finos dieletricosElectrical characteristics and interface structure of HfAIO/SiON/Si(001) stacksEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000656363.pdf000656363.pdfTexto completo (inglês)application/pdf537691http://www.lume.ufrgs.br/bitstream/10183/141706/1/000656363.pdfc77576038fe9c26ff1d19ad03e0303b4MD51TEXT000656363.pdf.txt000656363.pdf.txtExtracted Texttext/plain14817http://www.lume.ufrgs.br/bitstream/10183/141706/2/000656363.pdf.txt94fcaa60c735692232789ac43a0b4438MD52THUMBNAIL000656363.pdf.jpg000656363.pdf.jpgGenerated Thumbnailimage/jpeg2144http://www.lume.ufrgs.br/bitstream/10183/141706/3/000656363.pdf.jpg8a7e6a1fdeac04c5646bf56f282dc5f4MD5310183/1417062023-06-15 03:28:48.676347oai:www.lume.ufrgs.br:10183/141706Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-06-15T06:28:48Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks |
title |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks |
spellingShingle |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks Edon, Vincent Propriedades dielétricas Capacitores Filmes finos dieletricos |
title_short |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks |
title_full |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks |
title_fullStr |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks |
title_full_unstemmed |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks |
title_sort |
Electrical characteristics and interface structure of HfAIO/SiON/Si(001) stacks |
author |
Edon, Vincent |
author_facet |
Edon, Vincent Li, Z. Hugon, Marie-Christine Agius, Bernard Krug, Cristiano Baumvol, Israel Jacob Rabin Durand, Olivier Eypert, Céline |
author_role |
author |
author2 |
Li, Z. Hugon, Marie-Christine Agius, Bernard Krug, Cristiano Baumvol, Israel Jacob Rabin Durand, Olivier Eypert, Céline |
author2_role |
author author author author author author author |
dc.contributor.author.fl_str_mv |
Edon, Vincent Li, Z. Hugon, Marie-Christine Agius, Bernard Krug, Cristiano Baumvol, Israel Jacob Rabin Durand, Olivier Eypert, Céline |
dc.subject.por.fl_str_mv |
Propriedades dielétricas Capacitores Filmes finos dieletricos |
topic |
Propriedades dielétricas Capacitores Filmes finos dieletricos |
description |
The electrical characteristics of RuO2 /HfAlO/SiON/Si 001 capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies. |
publishDate |
2007 |
dc.date.issued.fl_str_mv |
2007 |
dc.date.accessioned.fl_str_mv |
2016-05-24T02:10:48Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
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http://hdl.handle.net/10183/141706 |
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0003-6951 |
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000656363 |
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http://hdl.handle.net/10183/141706 |
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eng |
language |
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dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Vol. 90, no. 12 (Mar. 2007), 122905, 3 p. |
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openAccess |
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