Desenvolvimento de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos em diferentes eletrodos óxidos

• Autor(a) principal: Vieira, Carlos Eduardo Guimarães [UNESP]
• Data de Publicação: 2012
• Tipo de documento: Trabalho de conclusão de curso
• Idioma: por
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://hdl.handle.net/11449/121718
• topic: Filmes finos; Dieletricos

Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films