Photoluminescence behavior of Si nanocrystals as a function of the implantation temperature and excitation power density

• Autor(a) principal: Sias, Uilson Schwantz
• Data de Publicação: 2005
• Outros Autores: Amaral, Livio, Behar, Moni, Boudinov, Henri Ivanov, Moreira, Eduardo Ceretta, Ribeiro, Euripedes
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/96096
• topic: Semicondutores elementares; Fotoluminescência; Silício; Microscopia eletrônica de transmissão

In this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implantation on SiO2 targets at temperatures ranging between room temperature and 800 °C and subsequently annealed in N2 atmosphere. The PL measurements were performed at low excitation power density (20 mW/cm²) in order to avoid nonlinear effects. Broad PL spectra were obtained, presenting a line-shape structure that can be reproduced by two superimposed peaks at around 780 and 950 nm. We have observed that both PL intensity and line-shape change by varying the annealing as well as the implantation temperatures. Implantations performed at 400 °C or higher produce a remarkable effect in the PL line shape, evidenced by a strong redshift, and a striking intensity increase of the peak located at the long-wavelength side of the PL spectrum. In addition we have studied the PL dependence on the excitation power density (from 0.002 to 15 W/cm²) . The samples with broad NC size distribution containing large grains, as revealed by transmission electron microscopy observations presented a PL spectrum whose line shape was strongly dependent on the excitation power density. While high excitation power densities (saturation regime) induce only the short-wavelength part of the PL spectrum, low excitation power densities bring out the appearance of the hidden long-wavelength part of the emission. The present results are explained by current models.