Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95835 |
Resumo: | A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion implantation in a large range of temperatures (-2200 up to 800°C), and subsequent furnace annealing in N2 ambient was performed. A PL signal in the wavelength range 650–1000 nm was observed. The PL peak wavelength and intensity are dependent on the fluence, implantation and annealing temperatures. It was found that after annealing at 1100°C, both implantations of 1.5x1017 Si/cm² at room temperature or 0.5x1017 Si/cm² at 400°C result in the same PL peak intensity. By varying the implantation temperature we can achieve the same PL efficiency with lower fluences showing that hot implantations play an important role for initial formation of the nanocrystals. The PL intensity evolution as a function of the annealing time was also studied. As the implantation temperature was increased, larger mean size Si nanocrystals were observed by means of dark-field transmission electron microscopy analysis. |
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Sias, Uilson SchwantzMoreira, Eduardo CerettaRibeiro, EuripedesBoudinov, Henri IvanovAmaral, LivioBehar, Moni2014-05-31T02:06:48Z20040021-8979http://hdl.handle.net/10183/95835000414478A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion implantation in a large range of temperatures (-2200 up to 800°C), and subsequent furnace annealing in N2 ambient was performed. A PL signal in the wavelength range 650–1000 nm was observed. The PL peak wavelength and intensity are dependent on the fluence, implantation and annealing temperatures. It was found that after annealing at 1100°C, both implantations of 1.5x1017 Si/cm² at room temperature or 0.5x1017 Si/cm² at 400°C result in the same PL peak intensity. By varying the implantation temperature we can achieve the same PL efficiency with lower fluences showing that hot implantations play an important role for initial formation of the nanocrystals. The PL intensity evolution as a function of the annealing time was also studied. As the implantation temperature was increased, larger mean size Si nanocrystals were observed by means of dark-field transmission electron microscopy analysis.application/pdfengJournal of applied physics. Vol. 95, no. 9 (May 2004), p. 5053-5059Semicondutores elementaresImplantacao ionicaNanopartículasFotoluminescênciaSilícioCompostos de silícioMicroscopia eletrônica de transmissãoPhotoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000414478.pdf000414478.pdfTexto completo (inglês)application/pdf1012195http://www.lume.ufrgs.br/bitstream/10183/95835/1/000414478.pdf9d122aa62fec21cdff5686b3e59137c1MD51TEXT000414478.pdf.txt000414478.pdf.txtExtracted Texttext/plain29966http://www.lume.ufrgs.br/bitstream/10183/95835/2/000414478.pdf.txtecad8b38c8348501aa738cc615311c54MD52THUMBNAIL000414478.pdf.jpg000414478.pdf.jpgGenerated Thumbnailimage/jpeg1583http://www.lume.ufrgs.br/bitstream/10183/95835/3/000414478.pdf.jpgc218f245a39c76d18080ad8df9d1771cMD5310183/958352022-02-22 05:16:11.060997oai:www.lume.ufrgs.br:10183/95835Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:16:11Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ |
title |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ |
spellingShingle |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ Sias, Uilson Schwantz Semicondutores elementares Implantacao ionica Nanopartículas Fotoluminescência Silício Compostos de silício Microscopia eletrônica de transmissão |
title_short |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ |
title_full |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ |
title_fullStr |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ |
title_full_unstemmed |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ |
title_sort |
Photoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/ |
author |
Sias, Uilson Schwantz |
author_facet |
Sias, Uilson Schwantz Moreira, Eduardo Ceretta Ribeiro, Euripedes Boudinov, Henri Ivanov Amaral, Livio Behar, Moni |
author_role |
author |
author2 |
Moreira, Eduardo Ceretta Ribeiro, Euripedes Boudinov, Henri Ivanov Amaral, Livio Behar, Moni |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Sias, Uilson Schwantz Moreira, Eduardo Ceretta Ribeiro, Euripedes Boudinov, Henri Ivanov Amaral, Livio Behar, Moni |
dc.subject.por.fl_str_mv |
Semicondutores elementares Implantacao ionica Nanopartículas Fotoluminescência Silício Compostos de silício Microscopia eletrônica de transmissão |
topic |
Semicondutores elementares Implantacao ionica Nanopartículas Fotoluminescência Silício Compostos de silício Microscopia eletrônica de transmissão |
description |
A systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion implantation in a large range of temperatures (-2200 up to 800°C), and subsequent furnace annealing in N2 ambient was performed. A PL signal in the wavelength range 650–1000 nm was observed. The PL peak wavelength and intensity are dependent on the fluence, implantation and annealing temperatures. It was found that after annealing at 1100°C, both implantations of 1.5x1017 Si/cm² at room temperature or 0.5x1017 Si/cm² at 400°C result in the same PL peak intensity. By varying the implantation temperature we can achieve the same PL efficiency with lower fluences showing that hot implantations play an important role for initial formation of the nanocrystals. The PL intensity evolution as a function of the annealing time was also studied. As the implantation temperature was increased, larger mean size Si nanocrystals were observed by means of dark-field transmission electron microscopy analysis. |
publishDate |
2004 |
dc.date.issued.fl_str_mv |
2004 |
dc.date.accessioned.fl_str_mv |
2014-05-31T02:06:48Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
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publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/95835 |
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0021-8979 |
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000414478 |
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0021-8979 000414478 |
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http://hdl.handle.net/10183/95835 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. Vol. 95, no. 9 (May 2004), p. 5053-5059 |
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openAccess |
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application/pdf |
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