Unraveling structural and compositional information in 3D FinFET electronic devices

• Autor(a) principal: Trombini, Henrique
• Data de Publicação: 2019
• Outros Autores: Marmitt, Gabriel Guterres, Vellame, Igor Alencar, Baptista, Daniel Lorscheitter, Reboh, Shay, Mazen, Frédéric, Pinheiro, Rafael Bortolin, Sanchez, Dario Ferreira, Senna, Carlos Alberto, Archanjo, Braulio Soares, Achete, Carlos A., Grande, Pedro Luis
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/200524
• topic: Feixes de íons; Espalhamento de íons de energia intermediaria; Difração de raios X; Dispositivos eletrônicos

Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology