Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography
Autor(a) principal: | |
---|---|
Data de Publicação: | 2014 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/116515 |
Resumo: | Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising nextgeneration lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8 nm and a sensitivity of 5 to 20 mJ∕cm². The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50 nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering. |
id |
UFRGS-2_883f38a93ac6769b84a3daa1cdad2f3c |
---|---|
oai_identifier_str |
oai:www.lume.ufrgs.br:10183/116515 |
network_acronym_str |
UFRGS-2 |
network_name_str |
Repositório Institucional da UFRGS |
repository_id_str |
|
spelling |
Singh, VikramSatyanarayana, Vardhineedi Sri VenkataBatina, NikolaReyes, Israel MoralesSharma, Satinder KumarKessler, FelipeScheffer, Francine RamosWeibel, Daniel EduardoGhosh, SubrataGonsalves, Kenneth E.2015-05-16T02:00:42Z20141932-5134http://hdl.handle.net/10183/116515000965920Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising nextgeneration lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8 nm and a sensitivity of 5 to 20 mJ∕cm². The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50 nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering.application/pdfengJournal of micro-nanolithography mems and moems. Bellingham. Vol. 13, no. 4 (Oct. 2014), 043002, 9 p.Litografia por feixe de elétronsCopolímerosUltravioleta extremaPolímerosNonchemically amplified resistPostexposure bakePostapply bakeE-beam lithographyExtreme ultraviolet lithographySurface roughnessContrastSensitivityEtch resistancePerformance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithographyEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000965920.pdf000965920.pdfTexto completo (inglês)application/pdf2517508http://www.lume.ufrgs.br/bitstream/10183/116515/1/000965920.pdf63402029681f0a908814a67cab43f157MD51TEXT000965920.pdf.txt000965920.pdf.txtExtracted Texttext/plain44967http://www.lume.ufrgs.br/bitstream/10183/116515/2/000965920.pdf.txtf8f864905e9146432ea4a43564248389MD52THUMBNAIL000965920.pdf.jpg000965920.pdf.jpgGenerated Thumbnailimage/jpeg1894http://www.lume.ufrgs.br/bitstream/10183/116515/3/000965920.pdf.jpg75240313e22e7566e2c2af125f61f104MD5310183/1165152018-10-22 08:12:21.641oai:www.lume.ufrgs.br:10183/116515Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-22T11:12:21Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography |
title |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography |
spellingShingle |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography Singh, Vikram Litografia por feixe de elétrons Copolímeros Ultravioleta extrema Polímeros Nonchemically amplified resist Postexposure bake Postapply bake E-beam lithography Extreme ultraviolet lithography Surface roughness Contrast Sensitivity Etch resistance |
title_short |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography |
title_full |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography |
title_fullStr |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography |
title_full_unstemmed |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography |
title_sort |
Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography |
author |
Singh, Vikram |
author_facet |
Singh, Vikram Satyanarayana, Vardhineedi Sri Venkata Batina, Nikola Reyes, Israel Morales Sharma, Satinder Kumar Kessler, Felipe Scheffer, Francine Ramos Weibel, Daniel Eduardo Ghosh, Subrata Gonsalves, Kenneth E. |
author_role |
author |
author2 |
Satyanarayana, Vardhineedi Sri Venkata Batina, Nikola Reyes, Israel Morales Sharma, Satinder Kumar Kessler, Felipe Scheffer, Francine Ramos Weibel, Daniel Eduardo Ghosh, Subrata Gonsalves, Kenneth E. |
author2_role |
author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Singh, Vikram Satyanarayana, Vardhineedi Sri Venkata Batina, Nikola Reyes, Israel Morales Sharma, Satinder Kumar Kessler, Felipe Scheffer, Francine Ramos Weibel, Daniel Eduardo Ghosh, Subrata Gonsalves, Kenneth E. |
dc.subject.por.fl_str_mv |
Litografia por feixe de elétrons Copolímeros Ultravioleta extrema Polímeros |
topic |
Litografia por feixe de elétrons Copolímeros Ultravioleta extrema Polímeros Nonchemically amplified resist Postexposure bake Postapply bake E-beam lithography Extreme ultraviolet lithography Surface roughness Contrast Sensitivity Etch resistance |
dc.subject.eng.fl_str_mv |
Nonchemically amplified resist Postexposure bake Postapply bake E-beam lithography Extreme ultraviolet lithography Surface roughness Contrast Sensitivity Etch resistance |
description |
Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising nextgeneration lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8 nm and a sensitivity of 5 to 20 mJ∕cm². The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50 nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering. |
publishDate |
2014 |
dc.date.issued.fl_str_mv |
2014 |
dc.date.accessioned.fl_str_mv |
2015-05-16T02:00:42Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/116515 |
dc.identifier.issn.pt_BR.fl_str_mv |
1932-5134 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000965920 |
identifier_str_mv |
1932-5134 000965920 |
url |
http://hdl.handle.net/10183/116515 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of micro-nanolithography mems and moems. Bellingham. Vol. 13, no. 4 (Oct. 2014), 043002, 9 p. |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFRGS instname:Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
instname_str |
Universidade Federal do Rio Grande do Sul (UFRGS) |
instacron_str |
UFRGS |
institution |
UFRGS |
reponame_str |
Repositório Institucional da UFRGS |
collection |
Repositório Institucional da UFRGS |
bitstream.url.fl_str_mv |
http://www.lume.ufrgs.br/bitstream/10183/116515/1/000965920.pdf http://www.lume.ufrgs.br/bitstream/10183/116515/2/000965920.pdf.txt http://www.lume.ufrgs.br/bitstream/10183/116515/3/000965920.pdf.jpg |
bitstream.checksum.fl_str_mv |
63402029681f0a908814a67cab43f157 f8f864905e9146432ea4a43564248389 75240313e22e7566e2c2af125f61f104 |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
repository.name.fl_str_mv |
Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS) |
repository.mail.fl_str_mv |
|
_version_ |
1801224870898434048 |