Turn on of new electronic paths in Fe-SiO2 granular thin film

Detalhes bibliográficos
Autor(a) principal: Boff, Marco Aurelio Silveira
Data de Publicação: 2014
Outros Autores: Hinrichs, Ruth, Canto, B., Mesquita, Fabiano, Baptista, Daniel Lorscheitter, Fraga, Gilberto Luiz Ferreira
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/142364
Resumo: The electrical properties of Fe-SiO2 have been studied in the low-field regime (eDV kBT), varying the injected current and the bias potential. Superparamagnetism and a resistance drop of 4400X (for a voltage variation of 15 V) were observed at room temperature. This resistance drop increased at lower temperatures. The electrical properties were described with the “Mott variable range hopping” model explaining the behavior of the electrical resistance and the electronic localization length as due to the activation of new electronic paths between more distant grains. This non-ohmic resistance at room temperature can be important for properties dependent of electrical current (magnetoresistance, Hall effect, and magnetoimpedance).
id UFRGS-2_97902d7f1a2087dd629a408e7b395f21
oai_identifier_str oai:www.lume.ufrgs.br:10183/142364
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Boff, Marco Aurelio SilveiraHinrichs, RuthCanto, B.Mesquita, FabianoBaptista, Daniel LorscheitterFraga, Gilberto Luiz Ferreira2016-06-09T02:08:07Z20140003-6951http://hdl.handle.net/10183/142364000941341The electrical properties of Fe-SiO2 have been studied in the low-field regime (eDV kBT), varying the injected current and the bias potential. Superparamagnetism and a resistance drop of 4400X (for a voltage variation of 15 V) were observed at room temperature. This resistance drop increased at lower temperatures. The electrical properties were described with the “Mott variable range hopping” model explaining the behavior of the electrical resistance and the electronic localization length as due to the activation of new electronic paths between more distant grains. This non-ohmic resistance at room temperature can be important for properties dependent of electrical current (magnetoresistance, Hall effect, and magnetoimpedance).application/pdfengApplied physics letters. New York. Vol. 105, no. 14 (Oct. 2014), 143112, 3 p.Propriedades eletricas dos materiaisEfeito hallMagnetorresistênciaSuperparamagnetismoMateriais granularesCompósitosFilmes finos magneticosCondução por saltoCompostos de silícioFerroTurn on of new electronic paths in Fe-SiO2 granular thin filmEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000941341.pdf000941341.pdfTexto completo (inglês)application/pdf652538http://www.lume.ufrgs.br/bitstream/10183/142364/1/000941341.pdfec80591e316bf2b6f40b72baa9f78000MD51TEXT000941341.pdf.txt000941341.pdf.txtExtracted Texttext/plain15265http://www.lume.ufrgs.br/bitstream/10183/142364/2/000941341.pdf.txt659724c4b5a138762a6506f4b10dca50MD52THUMBNAIL000941341.pdf.jpg000941341.pdf.jpgGenerated Thumbnailimage/jpeg2049http://www.lume.ufrgs.br/bitstream/10183/142364/3/000941341.pdf.jpg404619065c819310fd7813e26f98ba96MD5310183/1423642023-08-04 03:32:44.841721oai:www.lume.ufrgs.br:10183/142364Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-08-04T06:32:44Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Turn on of new electronic paths in Fe-SiO2 granular thin film
title Turn on of new electronic paths in Fe-SiO2 granular thin film
spellingShingle Turn on of new electronic paths in Fe-SiO2 granular thin film
Boff, Marco Aurelio Silveira
Propriedades eletricas dos materiais
Efeito hall
Magnetorresistência
Superparamagnetismo
Materiais granulares
Compósitos
Filmes finos magneticos
Condução por salto
Compostos de silício
Ferro
title_short Turn on of new electronic paths in Fe-SiO2 granular thin film
title_full Turn on of new electronic paths in Fe-SiO2 granular thin film
title_fullStr Turn on of new electronic paths in Fe-SiO2 granular thin film
title_full_unstemmed Turn on of new electronic paths in Fe-SiO2 granular thin film
title_sort Turn on of new electronic paths in Fe-SiO2 granular thin film
author Boff, Marco Aurelio Silveira
author_facet Boff, Marco Aurelio Silveira
Hinrichs, Ruth
Canto, B.
Mesquita, Fabiano
Baptista, Daniel Lorscheitter
Fraga, Gilberto Luiz Ferreira
author_role author
author2 Hinrichs, Ruth
Canto, B.
Mesquita, Fabiano
Baptista, Daniel Lorscheitter
Fraga, Gilberto Luiz Ferreira
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Boff, Marco Aurelio Silveira
Hinrichs, Ruth
Canto, B.
Mesquita, Fabiano
Baptista, Daniel Lorscheitter
Fraga, Gilberto Luiz Ferreira
dc.subject.por.fl_str_mv Propriedades eletricas dos materiais
Efeito hall
Magnetorresistência
Superparamagnetismo
Materiais granulares
Compósitos
Filmes finos magneticos
Condução por salto
Compostos de silício
Ferro
topic Propriedades eletricas dos materiais
Efeito hall
Magnetorresistência
Superparamagnetismo
Materiais granulares
Compósitos
Filmes finos magneticos
Condução por salto
Compostos de silício
Ferro
description The electrical properties of Fe-SiO2 have been studied in the low-field regime (eDV kBT), varying the injected current and the bias potential. Superparamagnetism and a resistance drop of 4400X (for a voltage variation of 15 V) were observed at room temperature. This resistance drop increased at lower temperatures. The electrical properties were described with the “Mott variable range hopping” model explaining the behavior of the electrical resistance and the electronic localization length as due to the activation of new electronic paths between more distant grains. This non-ohmic resistance at room temperature can be important for properties dependent of electrical current (magnetoresistance, Hall effect, and magnetoimpedance).
publishDate 2014
dc.date.issued.fl_str_mv 2014
dc.date.accessioned.fl_str_mv 2016-06-09T02:08:07Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/142364
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000941341
identifier_str_mv 0003-6951
000941341
url http://hdl.handle.net/10183/142364
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 105, no. 14 (Oct. 2014), 143112, 3 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/142364/1/000941341.pdf
http://www.lume.ufrgs.br/bitstream/10183/142364/2/000941341.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/142364/3/000941341.pdf.jpg
bitstream.checksum.fl_str_mv ec80591e316bf2b6f40b72baa9f78000
659724c4b5a138762a6506f4b10dca50
404619065c819310fd7813e26f98ba96
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1815447616604864512

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