Implanted boron depth profiles in the az111 photoresist

• Autor(a) principal: Guimaraes, Renato Bastos
• Data de Publicação: 1988
• Outros Autores: Amaral, Livio, Behar, Moni, Fichtner, Paulo Fernando Papaleo, Zawislak, Fernando Claudio
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/95119
• topic: Implantação de íons

The isotope 1OB has been implanted into the photoresist AZll1 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 1OB(n,a) 7 Li reaction. At 60 keV, the profile changes from a regular shape to one with an additional tail directed towards the surface. Despite the nonregular shape of the ion distributions, it is possible to extract the characteristic range parameters such as projected range Rp, most probable range ^R, and full width at half-maximum. Good agreement is found between the experimental results and the calculations by Ziegler, Biersack, and Littmark (ZBL), It is also shown that the tail distribution follows closely the ZBL calculated ionization profiles. A tentative explanation of this behavior is given.