Single event transients in logic circuits - load and propagation induced pulse broadening

Detalhes bibliográficos
Autor(a) principal: Wirth, Gilson Inacio
Data de Publicação: 2008
Outros Autores: Kastensmidt, Fernanda Gusmão de Lima, Ribeiro, Ivandro da Silva
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/27617
Resumo: The generation and propagation of single event transients (SET) in logic gate chains is studied and modeled. Regarding SET generation, we investigate the dependence of the generated SET pulse width on the struck node capacitance. Rising node capacitance may lead to amplified pulse width, indicating that increasing load capacitance alone is not an option for radiation hardening. SET propagation in logic chains is also studied, and it is shown that significant broadening or attenuation of the propagated transient pulse width may be observed. It is shown that the chain design (propagation delay of high to low and low to high transitions) has a major impact on broadening or attenuation of the propagated transient pulse. For the first time a suitable model for SET broadening is provided.
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spelling Wirth, Gilson InacioKastensmidt, Fernanda Gusmão de LimaRibeiro, Ivandro da Silva2011-01-29T06:00:42Z20080018-9499http://hdl.handle.net/10183/27617000684895The generation and propagation of single event transients (SET) in logic gate chains is studied and modeled. Regarding SET generation, we investigate the dependence of the generated SET pulse width on the struck node capacitance. Rising node capacitance may lead to amplified pulse width, indicating that increasing load capacitance alone is not an option for radiation hardening. SET propagation in logic chains is also studied, and it is shown that significant broadening or attenuation of the propagated transient pulse width may be observed. It is shown that the chain design (propagation delay of high to low and low to high transitions) has a major impact on broadening or attenuation of the propagated transient pulse. For the first time a suitable model for SET broadening is provided.application/pdfengIEEE transactions on nuclear science. New York. vol. 55, no. 6, part 1 (Dec. 2008), p. 2928-2935MicroeletrônicaDigital single event transientsLoad-induced pulse broadening effectPropagation-induced pulse broadening effectSET generationSET propagationSingle event transients in logic circuits - load and propagation induced pulse broadeningEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT000684895.pdf.txt000684895.pdf.txtExtracted Texttext/plain37558http://www.lume.ufrgs.br/bitstream/10183/27617/2/000684895.pdf.txt4a9c39a843f81218975e7154f9462aebMD52ORIGINAL000684895.pdf000684895.pdfTexto completo (inglês)application/pdf297524http://www.lume.ufrgs.br/bitstream/10183/27617/1/000684895.pdf05d3c15e38f178101f756598d2e2d25cMD51THUMBNAIL000684895.pdf.jpg000684895.pdf.jpgGenerated Thumbnailimage/jpeg2333http://www.lume.ufrgs.br/bitstream/10183/27617/3/000684895.pdf.jpg43e7adf6397b6d868094702928eebb3eMD5310183/276172021-06-12 04:52:42.521628oai:www.lume.ufrgs.br:10183/27617Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-12T07:52:42Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Single event transients in logic circuits - load and propagation induced pulse broadening
title Single event transients in logic circuits - load and propagation induced pulse broadening
spellingShingle Single event transients in logic circuits - load and propagation induced pulse broadening
Wirth, Gilson Inacio
Microeletrônica
Digital single event transients
Load-induced pulse broadening effect
Propagation-induced pulse broadening effect
SET generation
SET propagation
title_short Single event transients in logic circuits - load and propagation induced pulse broadening
title_full Single event transients in logic circuits - load and propagation induced pulse broadening
title_fullStr Single event transients in logic circuits - load and propagation induced pulse broadening
title_full_unstemmed Single event transients in logic circuits - load and propagation induced pulse broadening
title_sort Single event transients in logic circuits - load and propagation induced pulse broadening
author Wirth, Gilson Inacio
author_facet Wirth, Gilson Inacio
Kastensmidt, Fernanda Gusmão de Lima
Ribeiro, Ivandro da Silva
author_role author
author2 Kastensmidt, Fernanda Gusmão de Lima
Ribeiro, Ivandro da Silva
author2_role author
author
dc.contributor.author.fl_str_mv Wirth, Gilson Inacio
Kastensmidt, Fernanda Gusmão de Lima
Ribeiro, Ivandro da Silva
dc.subject.por.fl_str_mv Microeletrônica
topic Microeletrônica
Digital single event transients
Load-induced pulse broadening effect
Propagation-induced pulse broadening effect
SET generation
SET propagation
dc.subject.eng.fl_str_mv Digital single event transients
Load-induced pulse broadening effect
Propagation-induced pulse broadening effect
SET generation
SET propagation
description The generation and propagation of single event transients (SET) in logic gate chains is studied and modeled. Regarding SET generation, we investigate the dependence of the generated SET pulse width on the struck node capacitance. Rising node capacitance may lead to amplified pulse width, indicating that increasing load capacitance alone is not an option for radiation hardening. SET propagation in logic chains is also studied, and it is shown that significant broadening or attenuation of the propagated transient pulse width may be observed. It is shown that the chain design (propagation delay of high to low and low to high transitions) has a major impact on broadening or attenuation of the propagated transient pulse. For the first time a suitable model for SET broadening is provided.
publishDate 2008
dc.date.issued.fl_str_mv 2008
dc.date.accessioned.fl_str_mv 2011-01-29T06:00:42Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/27617
dc.identifier.issn.pt_BR.fl_str_mv 0018-9499
dc.identifier.nrb.pt_BR.fl_str_mv 000684895
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url http://hdl.handle.net/10183/27617
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv IEEE transactions on nuclear science. New York. vol. 55, no. 6, part 1 (Dec. 2008), p. 2928-2935
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