Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability
Autor(a) principal: | |
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Data de Publicação: | 2008 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/117995 |
Resumo: | Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity 0.1 MeV/u 197Au, 130Te, 75As, 32S, and 19F . Subsequent chemical etching produced conical holes in the films with apertures from a few tens to 150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Se th 2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se 4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy or electronic stopping force can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching Se th if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm. |
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Dallanora, Arícia OliveiraMarcondes, Tatiana LisbôaBermudez, GerardoFichtner, Paulo Fernando PapaleoTrautmann, C.Toulemonde, M.Papaleo, Ricardo Meurer2015-06-19T02:00:40Z20080021-8979http://hdl.handle.net/10183/117995000967976Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity 0.1 MeV/u 197Au, 130Te, 75As, 32S, and 19F . Subsequent chemical etching produced conical holes in the films with apertures from a few tens to 150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Se th 2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se 4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy or electronic stopping force can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching Se th if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm.application/pdfengJournal of applied physics. Melville, NY. Vol. 104, no. 2 (July 2008), p. 024307-1 a 024307-8ÍonsEletrodeposiçãoDióxido de silícioNanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchabilityEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000967976.pdf000967976.pdfTexto completo (inglês)application/pdf874049http://www.lume.ufrgs.br/bitstream/10183/117995/1/000967976.pdf8920d3dc3122418ed7d734d244630f7bMD51TEXT000967976.pdf.txt000967976.pdf.txtExtracted Texttext/plain42449http://www.lume.ufrgs.br/bitstream/10183/117995/2/000967976.pdf.txtc1e48e71352c43d0e288b52984d9a566MD52THUMBNAIL000967976.pdf.jpg000967976.pdf.jpgGenerated Thumbnailimage/jpeg2194http://www.lume.ufrgs.br/bitstream/10183/117995/3/000967976.pdf.jpgb49f8ed1829a0eb88be50403f0f3a528MD5310183/1179952018-10-08 07:53:19.03oai:www.lume.ufrgs.br:10183/117995Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-08T10:53:19Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability |
title |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability |
spellingShingle |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability Dallanora, Arícia Oliveira Íons Eletrodeposição Dióxido de silício |
title_short |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability |
title_full |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability |
title_fullStr |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability |
title_full_unstemmed |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability |
title_sort |
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability |
author |
Dallanora, Arícia Oliveira |
author_facet |
Dallanora, Arícia Oliveira Marcondes, Tatiana Lisbôa Bermudez, Gerardo Fichtner, Paulo Fernando Papaleo Trautmann, C. Toulemonde, M. Papaleo, Ricardo Meurer |
author_role |
author |
author2 |
Marcondes, Tatiana Lisbôa Bermudez, Gerardo Fichtner, Paulo Fernando Papaleo Trautmann, C. Toulemonde, M. Papaleo, Ricardo Meurer |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
Dallanora, Arícia Oliveira Marcondes, Tatiana Lisbôa Bermudez, Gerardo Fichtner, Paulo Fernando Papaleo Trautmann, C. Toulemonde, M. Papaleo, Ricardo Meurer |
dc.subject.por.fl_str_mv |
Íons Eletrodeposição Dióxido de silício |
topic |
Íons Eletrodeposição Dióxido de silício |
description |
Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity 0.1 MeV/u 197Au, 130Te, 75As, 32S, and 19F . Subsequent chemical etching produced conical holes in the films with apertures from a few tens to 150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Se th 2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se 4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy or electronic stopping force can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching Se th if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm. |
publishDate |
2008 |
dc.date.issued.fl_str_mv |
2008 |
dc.date.accessioned.fl_str_mv |
2015-06-19T02:00:40Z |
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000967976 |
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http://hdl.handle.net/10183/117995 |
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eng |
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eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. Melville, NY. Vol. 104, no. 2 (July 2008), p. 024307-1 a 024307-8 |
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