Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs

Detalhes bibliográficos
Autor(a) principal: Wirth, Gilson Inacio
Data de Publicação: 2007
Outros Autores: Silva, Roberto da, Brederlow, Ralf
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/27583
Resumo: This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.
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spelling Wirth, Gilson InacioSilva, Roberto daBrederlow, Ralf2011-01-28T05:59:10Z20070018-9383http://hdl.handle.net/10183/27583000581798This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.application/pdfengIEEE transactions on electron devices. New York, NY. vol. 54, no. 2 (Feb. 2007), p. 340-345MicroeletrônicaCircuitos analógicosEngenharia elétricaSimulação computacionalMosfetAnalog circuitsLow-frequency (LF) noiseMOS transistorsNoise modelingRF circuitsVariabilityStatistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000581798.pdf000581798.pdfTexto completo (inglês)application/pdf201471http://www.lume.ufrgs.br/bitstream/10183/27583/1/000581798.pdffb85654edc6199fa7c97a3dcd6681c4eMD51TEXT000581798.pdf.txt000581798.pdf.txtExtracted Texttext/plain29397http://www.lume.ufrgs.br/bitstream/10183/27583/2/000581798.pdf.txt1694e439a72ccf7c74f98008b2686b12MD52THUMBNAIL000581798.pdf.jpg000581798.pdf.jpgGenerated Thumbnailimage/jpeg2292http://www.lume.ufrgs.br/bitstream/10183/27583/3/000581798.pdf.jpg6cb5a9ec68b9206a2fa4b7af2758b2beMD5310183/275832018-10-09 09:05:09.529oai:www.lume.ufrgs.br:10183/27583Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-09T12:05:09Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
title Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
spellingShingle Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
Wirth, Gilson Inacio
Microeletrônica
Circuitos analógicos
Engenharia elétrica
Simulação computacional
Mosfet
Analog circuits
Low-frequency (LF) noise
MOS transistors
Noise modeling
RF circuits
Variability
title_short Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
title_full Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
title_fullStr Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
title_full_unstemmed Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
title_sort Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
author Wirth, Gilson Inacio
author_facet Wirth, Gilson Inacio
Silva, Roberto da
Brederlow, Ralf
author_role author
author2 Silva, Roberto da
Brederlow, Ralf
author2_role author
author
dc.contributor.author.fl_str_mv Wirth, Gilson Inacio
Silva, Roberto da
Brederlow, Ralf
dc.subject.por.fl_str_mv Microeletrônica
Circuitos analógicos
Engenharia elétrica
Simulação computacional
Mosfet
topic Microeletrônica
Circuitos analógicos
Engenharia elétrica
Simulação computacional
Mosfet
Analog circuits
Low-frequency (LF) noise
MOS transistors
Noise modeling
RF circuits
Variability
dc.subject.eng.fl_str_mv Analog circuits
Low-frequency (LF) noise
MOS transistors
Noise modeling
RF circuits
Variability
description This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.
publishDate 2007
dc.date.issued.fl_str_mv 2007
dc.date.accessioned.fl_str_mv 2011-01-28T05:59:10Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/27583
dc.identifier.issn.pt_BR.fl_str_mv 0018-9383
dc.identifier.nrb.pt_BR.fl_str_mv 000581798
identifier_str_mv 0018-9383
000581798
url http://hdl.handle.net/10183/27583
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv IEEE transactions on electron devices. New York, NY. vol. 54, no. 2 (Feb. 2007), p. 340-345
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
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instacron:UFRGS
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institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
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