Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure

Detalhes bibliográficos
Autor(a) principal: Olivieri, Carlos Alberto
Data de Publicação: 1988
Outros Autores: Behar, Moni, Grande, Pedro Luis, Fichtner, Paulo Fernando Papaleo, Zawislak, Fernando Claudio, Biersack, J.P., Fink, Dietmar
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95117
Resumo: 350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.
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spelling Olivieri, Carlos AlbertoBehar, MoniGrande, Pedro LuisFichtner, Paulo Fernando PapaleoZawislak, Fernando ClaudioBiersack, J.P.Fink, Dietmar2014-05-13T02:03:40Z19880021-8979http://hdl.handle.net/10183/95117000014851350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.application/pdfengJournal of applied physics. Woodbury. Vol. 63, no. 9 (May 1988), p. 4431-4434Implantação de íonsThermal behavior and range distribution of 209bi implanted the into ai/v bilayer structureEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000014851.pdf000014851.pdfTexto completo (inglês)application/pdf680942http://www.lume.ufrgs.br/bitstream/10183/95117/1/000014851.pdf645e70bf164876d458250699a138b5e0MD51TEXT000014851.pdf.txt000014851.pdf.txtExtracted Texttext/plain22893http://www.lume.ufrgs.br/bitstream/10183/95117/2/000014851.pdf.txt0ceac581768d7bdd078709b6dfb0f27bMD52THUMBNAIL000014851.pdf.jpg000014851.pdf.jpgGenerated Thumbnailimage/jpeg1575http://www.lume.ufrgs.br/bitstream/10183/95117/3/000014851.pdf.jpg0dc7ea61192b67fcfb02ca8c914344cbMD5310183/951172024-06-05 06:49:50.886292oai:www.lume.ufrgs.br:10183/95117Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-06-05T09:49:50Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
title Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
spellingShingle Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
Olivieri, Carlos Alberto
Implantação de íons
title_short Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
title_full Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
title_fullStr Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
title_full_unstemmed Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
title_sort Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
author Olivieri, Carlos Alberto
author_facet Olivieri, Carlos Alberto
Behar, Moni
Grande, Pedro Luis
Fichtner, Paulo Fernando Papaleo
Zawislak, Fernando Claudio
Biersack, J.P.
Fink, Dietmar
author_role author
author2 Behar, Moni
Grande, Pedro Luis
Fichtner, Paulo Fernando Papaleo
Zawislak, Fernando Claudio
Biersack, J.P.
Fink, Dietmar
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Olivieri, Carlos Alberto
Behar, Moni
Grande, Pedro Luis
Fichtner, Paulo Fernando Papaleo
Zawislak, Fernando Claudio
Biersack, J.P.
Fink, Dietmar
dc.subject.por.fl_str_mv Implantação de íons
topic Implantação de íons
description 350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk.
publishDate 1988
dc.date.issued.fl_str_mv 1988
dc.date.accessioned.fl_str_mv 2014-05-13T02:03:40Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95117
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Woodbury. Vol. 63, no. 9 (May 1988), p. 4431-4434
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