Recrystallization behavior of silicon implanted with iron

Detalhes bibliográficos
Autor(a) principal: Souza, Joel Pereira de
Data de Publicação: 1992
Outros Autores: Amaral, Livio, Fichtner, Paulo Fernando Papaleo
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95344
Resumo: The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1 X 1015 cm-², 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and releasedw hen they are reached by the moving a-c interface during the SPEG process.
id UFRGS-2_cd10115d9cd5268c835b2337bcfd57a3
oai_identifier_str oai:www.lume.ufrgs.br:10183/95344
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Souza, Joel Pereira deAmaral, LivioFichtner, Paulo Fernando Papaleo2014-05-17T02:06:46Z19920021-8979http://hdl.handle.net/10183/95344000056039The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1 X 1015 cm-², 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and releasedw hen they are reached by the moving a-c interface during the SPEG process.application/pdfengJournal of Applied Physics. Woodbury. Vol. 71, n. 11 (June 1992), p. 5423-5426Física da matéria condensadaImplantação de íonsRecrystallization behavior of silicon implanted with ironEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000056039.pdf000056039.pdfTexto completo (inglês)application/pdf590031http://www.lume.ufrgs.br/bitstream/10183/95344/1/000056039.pdf9c728f4574dbc8017266c535931c9d40MD51TEXT000056039.pdf.txt000056039.pdf.txtExtracted Texttext/plain17837http://www.lume.ufrgs.br/bitstream/10183/95344/2/000056039.pdf.txtf81180f694969eea56a8d902b504384aMD52THUMBNAIL000056039.pdf.jpg000056039.pdf.jpgGenerated Thumbnailimage/jpeg1568http://www.lume.ufrgs.br/bitstream/10183/95344/3/000056039.pdf.jpg398858c50b01f880265d1f14d5ea60c0MD5310183/953442022-02-22 04:58:35.172365oai:www.lume.ufrgs.br:10183/95344Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:58:35Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Recrystallization behavior of silicon implanted with iron
title Recrystallization behavior of silicon implanted with iron
spellingShingle Recrystallization behavior of silicon implanted with iron
Souza, Joel Pereira de
Física da matéria condensada
Implantação de íons
title_short Recrystallization behavior of silicon implanted with iron
title_full Recrystallization behavior of silicon implanted with iron
title_fullStr Recrystallization behavior of silicon implanted with iron
title_full_unstemmed Recrystallization behavior of silicon implanted with iron
title_sort Recrystallization behavior of silicon implanted with iron
author Souza, Joel Pereira de
author_facet Souza, Joel Pereira de
Amaral, Livio
Fichtner, Paulo Fernando Papaleo
author_role author
author2 Amaral, Livio
Fichtner, Paulo Fernando Papaleo
author2_role author
author
dc.contributor.author.fl_str_mv Souza, Joel Pereira de
Amaral, Livio
Fichtner, Paulo Fernando Papaleo
dc.subject.por.fl_str_mv Física da matéria condensada
Implantação de íons
topic Física da matéria condensada
Implantação de íons
description The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1 X 1015 cm-², 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and releasedw hen they are reached by the moving a-c interface during the SPEG process.
publishDate 1992
dc.date.issued.fl_str_mv 1992
dc.date.accessioned.fl_str_mv 2014-05-17T02:06:46Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95344
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000056039
identifier_str_mv 0021-8979
000056039
url http://hdl.handle.net/10183/95344
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of Applied Physics. Woodbury. Vol. 71, n. 11 (June 1992), p. 5423-5426
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/95344/1/000056039.pdf
http://www.lume.ufrgs.br/bitstream/10183/95344/2/000056039.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/95344/3/000056039.pdf.jpg
bitstream.checksum.fl_str_mv 9c728f4574dbc8017266c535931c9d40
f81180f694969eea56a8d902b504384a
398858c50b01f880265d1f14d5ea60c0
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801224834598830080

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