Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

Detalhes bibliográficos
Autor(a) principal: Miotti, Leonardo
Data de Publicação: 2006
Outros Autores: Driemeier, Carlos Eduardo, Tatsch, Felipe Wolff, Radtke, Claudio, Baumvol, Israel Jacob Rabin
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141396
Resumo: Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C induces decomposition of the aluminate films leading to Hf and Al losses mainly into the gas phase. It was possible to avoid this undesired decomposition effect by performing a postdeposition nitridation in NH3 at 850 °C prior to the rapid thermal annealing step. The role of nitridation is discussed in terms of the profiles of incorporated N, before and after rapid thermal annealing, as determined by narrow resonant nuclear reaction profiling.
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spelling Miotti, LeonardoDriemeier, Carlos EduardoTatsch, Felipe WolffRadtke, ClaudioBaumvol, Israel Jacob Rabin2016-05-20T02:10:19Z20060003-6951http://hdl.handle.net/10183/141396000555879Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C induces decomposition of the aluminate films leading to Hf and Al losses mainly into the gas phase. It was possible to avoid this undesired decomposition effect by performing a postdeposition nitridation in NH3 at 850 °C prior to the rapid thermal annealing step. The role of nitridation is discussed in terms of the profiles of incorporated N, before and after rapid thermal annealing, as determined by narrow resonant nuclear reaction profiling.application/pdfengApplied physics letters. Vol. 89. no. 1 (July 2006), 012904, 3 p.AlumínioDecomposiçãoNitretaçãoRecozimento térmico rápidoCompostos de háfnioFilmes finos dieletricosMetal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analysesEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000555879.pdf000555879.pdfTexto completo (inglês)application/pdf438609http://www.lume.ufrgs.br/bitstream/10183/141396/1/000555879.pdf478009748a442d33aff6a944df2513d1MD51TEXT000555879.pdf.txt000555879.pdf.txtExtracted Texttext/plain17924http://www.lume.ufrgs.br/bitstream/10183/141396/2/000555879.pdf.txtb6eb6082ecc72da29330d37650ff6297MD52THUMBNAIL000555879.pdf.jpg000555879.pdf.jpgGenerated Thumbnailimage/jpeg2243http://www.lume.ufrgs.br/bitstream/10183/141396/3/000555879.pdf.jpg39059ca3c9d3ec18bea4c73903298fe4MD5310183/1413962021-06-13 04:34:09.952398oai:www.lume.ufrgs.br:10183/141396Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:34:09Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
title Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
spellingShingle Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
Miotti, Leonardo
Alumínio
Decomposição
Nitretação
Recozimento térmico rápido
Compostos de háfnio
Filmes finos dieletricos
title_short Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
title_full Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
title_fullStr Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
title_full_unstemmed Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
title_sort Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
author Miotti, Leonardo
author_facet Miotti, Leonardo
Driemeier, Carlos Eduardo
Tatsch, Felipe Wolff
Radtke, Claudio
Baumvol, Israel Jacob Rabin
author_role author
author2 Driemeier, Carlos Eduardo
Tatsch, Felipe Wolff
Radtke, Claudio
Baumvol, Israel Jacob Rabin
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Miotti, Leonardo
Driemeier, Carlos Eduardo
Tatsch, Felipe Wolff
Radtke, Claudio
Baumvol, Israel Jacob Rabin
dc.subject.por.fl_str_mv Alumínio
Decomposição
Nitretação
Recozimento térmico rápido
Compostos de háfnio
Filmes finos dieletricos
topic Alumínio
Decomposição
Nitretação
Recozimento térmico rápido
Compostos de háfnio
Filmes finos dieletricos
description Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C induces decomposition of the aluminate films leading to Hf and Al losses mainly into the gas phase. It was possible to avoid this undesired decomposition effect by performing a postdeposition nitridation in NH3 at 850 °C prior to the rapid thermal annealing step. The role of nitridation is discussed in terms of the profiles of incorporated N, before and after rapid thermal annealing, as determined by narrow resonant nuclear reaction profiling.
publishDate 2006
dc.date.issued.fl_str_mv 2006
dc.date.accessioned.fl_str_mv 2016-05-20T02:10:19Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141396
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000555879
identifier_str_mv 0003-6951
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url http://hdl.handle.net/10183/141396
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Vol. 89. no. 1 (July 2006), 012904, 3 p.
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