Thermal behavior of hafnium-based ultrathin films on silicon

• Autor(a) principal: Pezzi, Rafael Peretti
• Data de Publicação: 2003
• Outros Autores: Morais, Jonder, Dahmen, Silvio Renato, Bastos, Karen Paz, Miotti, Leonardo, Soares, Gabriel Vieira, Baumvol, Israel Jacob Rabin, Freire Junior, Fernando Lazaro
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/204865
• topic: Compostos de alumínio; Materiais dielétricos; Filmes finos dieletricos; Compostos de háfnio; Retroespalhamento rutherford; Auto-difusao; Silício; Estabilidade térmica; Espectros de raio x de fotoeletrons

We report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely hafnium oxide (HfO2), silicate (HfSixOy), and aluminum silicate (AlHfxSiyOz), deposited on silicon. These materials are promising candidates to replace the well established silicon oxide and oxynitride as gate dielectric materials in advanced Si-based complementary metal–oxide– semiconductor technology. Since there are mandatory requirements on the gate dielectric material, hafnium oxide is currently being modified, by adding silicon and aluminum into the matrix, increasing its thermal stability, and improving its electrical properties. Diffusion-reaction during thermal processing was investigated using isotopic substitution together with ion beam techniques such as Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and nuclear reaction analysis. The chemical changes in the films were accessed by x-ray photoelectron spectroscopy.