Thermochemical behavior of hydrogen in hafnium silicate films on Si
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141386 |
Resumo: | HfSiO films on Si were sequentially annealed in vacuum, oxygen, hydrogen, or deuterium atmospheres followed by quantification of H and D by nuclear reaction analysis. The observed H D incorporation and desorption behaviors are discussed in terms of two H bonding states in the films. Si–H bonds are easier to break thermally and formation of these bonds can be suppressed by annealing in O2 to fully oxidize Si atoms. O–H bonds are harder to break thermally. However, hydrogen atmospheres ease desorption of H in O–H species. The results indicate possible paths to achieve low H content in HfSiO gate dielectrics. |
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Driemeier, Carlos EduardoChambers, James JosephColombo, LuigiBaumvol, Israel Jacob Rabin2016-05-20T02:10:14Z20060003-6951http://hdl.handle.net/10183/141386000549780HfSiO films on Si were sequentially annealed in vacuum, oxygen, hydrogen, or deuterium atmospheres followed by quantification of H and D by nuclear reaction analysis. The observed H D incorporation and desorption behaviors are discussed in terms of two H bonding states in the films. Si–H bonds are easier to break thermally and formation of these bonds can be suppressed by annealing in O2 to fully oxidize Si atoms. O–H bonds are harder to break thermally. However, hydrogen atmospheres ease desorption of H in O–H species. The results indicate possible paths to achieve low H content in HfSiO gate dielectrics.application/pdfengApplied physics letters. Vol. 89, no. 5 (July 2006), 051921, 3 p.FísicaThermochemical behavior of hydrogen in hafnium silicate films on SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000549780.pdf000549780.pdfTexto completo (inglês)application/pdf432688http://www.lume.ufrgs.br/bitstream/10183/141386/1/000549780.pdf8054e769ca7512b54a17068797b46ef0MD51TEXT000549780.pdf.txt000549780.pdf.txtExtracted Texttext/plain18655http://www.lume.ufrgs.br/bitstream/10183/141386/2/000549780.pdf.txtf452e115b71d7d31f5924e64c5a9efb5MD52THUMBNAIL000549780.pdf.jpg000549780.pdf.jpgGenerated Thumbnailimage/jpeg2152http://www.lume.ufrgs.br/bitstream/10183/141386/3/000549780.pdf.jpg4d550483d0c267a6896ce3434ea7c3c9MD5310183/1413862021-06-13 04:36:01.981896oai:www.lume.ufrgs.br:10183/141386Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:36:01Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Thermochemical behavior of hydrogen in hafnium silicate films on Si |
title |
Thermochemical behavior of hydrogen in hafnium silicate films on Si |
spellingShingle |
Thermochemical behavior of hydrogen in hafnium silicate films on Si Driemeier, Carlos Eduardo Física |
title_short |
Thermochemical behavior of hydrogen in hafnium silicate films on Si |
title_full |
Thermochemical behavior of hydrogen in hafnium silicate films on Si |
title_fullStr |
Thermochemical behavior of hydrogen in hafnium silicate films on Si |
title_full_unstemmed |
Thermochemical behavior of hydrogen in hafnium silicate films on Si |
title_sort |
Thermochemical behavior of hydrogen in hafnium silicate films on Si |
author |
Driemeier, Carlos Eduardo |
author_facet |
Driemeier, Carlos Eduardo Chambers, James Joseph Colombo, Luigi Baumvol, Israel Jacob Rabin |
author_role |
author |
author2 |
Chambers, James Joseph Colombo, Luigi Baumvol, Israel Jacob Rabin |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Driemeier, Carlos Eduardo Chambers, James Joseph Colombo, Luigi Baumvol, Israel Jacob Rabin |
dc.subject.por.fl_str_mv |
Física |
topic |
Física |
description |
HfSiO films on Si were sequentially annealed in vacuum, oxygen, hydrogen, or deuterium atmospheres followed by quantification of H and D by nuclear reaction analysis. The observed H D incorporation and desorption behaviors are discussed in terms of two H bonding states in the films. Si–H bonds are easier to break thermally and formation of these bonds can be suppressed by annealing in O2 to fully oxidize Si atoms. O–H bonds are harder to break thermally. However, hydrogen atmospheres ease desorption of H in O–H species. The results indicate possible paths to achieve low H content in HfSiO gate dielectrics. |
publishDate |
2006 |
dc.date.issued.fl_str_mv |
2006 |
dc.date.accessioned.fl_str_mv |
2016-05-20T02:10:14Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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article |
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publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141386 |
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0003-6951 |
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000549780 |
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0003-6951 000549780 |
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http://hdl.handle.net/10183/141386 |
dc.language.iso.fl_str_mv |
eng |
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eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Vol. 89, no. 5 (July 2006), 051921, 3 p. |
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info:eu-repo/semantics/openAccess |
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openAccess |
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