Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures

Detalhes bibliográficos
Autor(a) principal: Corrêa, Silma Alberton
Data de Publicação: 2013
Outros Autores: Soares, Gabriel Vieira, Tanner, Philip, Han, Jisheng, Dimitrijev, Sima, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/87205
Resumo: The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O 2 , NO, or O 2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed SiO 2 /SiC sample.
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spelling Corrêa, Silma AlbertonSoares, Gabriel VieiraTanner, PhilipHan, JishengDimitrijev, SimaStedile, Fernanda Chiarello2014-02-14T01:52:45Z20132162-8769http://hdl.handle.net/10183/87205000911661The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O 2 , NO, or O 2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed SiO 2 /SiC sample.application/pdfengECS Journal of Solid State Science and Technology. New Jersey. Vol. 2, no. 8 (2013), p. 3041-3044HidrogênioCarbeto de silícioHydrogen incorporation dependence on the thermal growth route in dielectric/SiC structuresEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000911661.pdf000911661.pdfTexto completo (inglês)application/pdf211188http://www.lume.ufrgs.br/bitstream/10183/87205/1/000911661.pdff6f69bbc24e31d57e38a7610b50ac51cMD51TEXT000911661.pdf.txt000911661.pdf.txtExtracted Texttext/plain28674http://www.lume.ufrgs.br/bitstream/10183/87205/2/000911661.pdf.txt68dee4aacb6b7aa307dc63300eb9145bMD52THUMBNAIL000911661.pdf.jpg000911661.pdf.jpgGenerated Thumbnailimage/jpeg2117http://www.lume.ufrgs.br/bitstream/10183/87205/3/000911661.pdf.jpg9b77f75227b9ceb8a59e0886df65bc89MD5310183/872052018-10-08 08:12:59.428oai:www.lume.ufrgs.br:10183/87205Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-08T11:12:59Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
title Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
spellingShingle Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
Corrêa, Silma Alberton
Hidrogênio
Carbeto de silício
title_short Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
title_full Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
title_fullStr Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
title_full_unstemmed Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
title_sort Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
author Corrêa, Silma Alberton
author_facet Corrêa, Silma Alberton
Soares, Gabriel Vieira
Tanner, Philip
Han, Jisheng
Dimitrijev, Sima
Stedile, Fernanda Chiarello
author_role author
author2 Soares, Gabriel Vieira
Tanner, Philip
Han, Jisheng
Dimitrijev, Sima
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Corrêa, Silma Alberton
Soares, Gabriel Vieira
Tanner, Philip
Han, Jisheng
Dimitrijev, Sima
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Hidrogênio
Carbeto de silício
topic Hidrogênio
Carbeto de silício
description The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O 2 , NO, or O 2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed SiO 2 /SiC sample.
publishDate 2013
dc.date.issued.fl_str_mv 2013
dc.date.accessioned.fl_str_mv 2014-02-14T01:52:45Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/87205
dc.identifier.issn.pt_BR.fl_str_mv 2162-8769
dc.identifier.nrb.pt_BR.fl_str_mv 000911661
identifier_str_mv 2162-8769
000911661
url http://hdl.handle.net/10183/87205
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv ECS Journal of Solid State Science and Technology. New Jersey. Vol. 2, no. 8 (2013), p. 3041-3044
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