On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing

Detalhes bibliográficos
Autor(a) principal: Baumvol, Israel Jacob Rabin
Data de Publicação: 1998
Outros Autores: Gusev, Evgeni P., Stedile, Fernanda Chiarello, Freire Junior, Fernando Lazaro, Green, Martin L., Brasen, D.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/140631
Resumo: Following the observation of the large isotopic effect in D2 passivated gate dielectrics @J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 ~1996!#, we studied the behavior of deuterium in ultrathin SiO2 films by nuclear reaction analysis techniques. Accurate concentrations of deuterium in the films, deuterium depth distributions, and deuterium removal from the film upon thermal annealing in vacuum have been examined. For D2 passivated films, we found rather high concentrations of deuterium near the SiO2 /Si interface, well above both the solubility of deuterium in silica and the maximum concentration of electrically active defects at the interface. Our results suggest a complex multistep mechanism of thermally activated deuterium removal from the film, which probably consists of D detrapping, diffusion, and desorption steps.
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spelling Baumvol, Israel Jacob RabinGusev, Evgeni P.Stedile, Fernanda ChiarelloFreire Junior, Fernando LazaroGreen, Martin L.Brasen, D.2016-05-10T02:07:14Z19980003-6951http://hdl.handle.net/10183/140631000095724Following the observation of the large isotopic effect in D2 passivated gate dielectrics @J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 ~1996!#, we studied the behavior of deuterium in ultrathin SiO2 films by nuclear reaction analysis techniques. Accurate concentrations of deuterium in the films, deuterium depth distributions, and deuterium removal from the film upon thermal annealing in vacuum have been examined. For D2 passivated films, we found rather high concentrations of deuterium near the SiO2 /Si interface, well above both the solubility of deuterium in silica and the maximum concentration of electrically active defects at the interface. Our results suggest a complex multistep mechanism of thermally activated deuterium removal from the film, which probably consists of D detrapping, diffusion, and desorption steps.application/pdfengApplied physics letters. New York. Vol. 72, no. 4 (Jan. 1998), p. 450-452Deutério : Tratamento térmicoDióxido de silícioImplantação de íonsFilmes finosOn the behavior of deuterium in ultrathin SiO2 films upon thermal annealingEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000095724.pdf000095724.pdfTexto completo (inglês)application/pdf442640http://www.lume.ufrgs.br/bitstream/10183/140631/1/000095724.pdf561a9782fe3992138ef64b4de89c9ebfMD51TEXT000095724.pdf.txt000095724.pdf.txtExtracted Texttext/plain18225http://www.lume.ufrgs.br/bitstream/10183/140631/2/000095724.pdf.txte317777838d0263cffa443fe5c91c5e8MD52THUMBNAIL000095724.pdf.jpg000095724.pdf.jpgGenerated Thumbnailimage/jpeg2027http://www.lume.ufrgs.br/bitstream/10183/140631/3/000095724.pdf.jpg1fbb0c4c35b5906c926b1c5c4d00e410MD5310183/1406312022-02-22 05:17:27.453697oai:www.lume.ufrgs.br:10183/140631Repositório InstitucionalPUBhttps://lume.ufrgs.br/oai/requestlume@ufrgs.bropendoar:2022-02-22T08:17:27Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
title On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
spellingShingle On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
Baumvol, Israel Jacob Rabin
Deutério : Tratamento térmico
Dióxido de silício
Implantação de íons
Filmes finos
title_short On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
title_full On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
title_fullStr On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
title_full_unstemmed On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
title_sort On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing
author Baumvol, Israel Jacob Rabin
author_facet Baumvol, Israel Jacob Rabin
Gusev, Evgeni P.
Stedile, Fernanda Chiarello
Freire Junior, Fernando Lazaro
Green, Martin L.
Brasen, D.
author_role author
author2 Gusev, Evgeni P.
Stedile, Fernanda Chiarello
Freire Junior, Fernando Lazaro
Green, Martin L.
Brasen, D.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Baumvol, Israel Jacob Rabin
Gusev, Evgeni P.
Stedile, Fernanda Chiarello
Freire Junior, Fernando Lazaro
Green, Martin L.
Brasen, D.
dc.subject.por.fl_str_mv Deutério : Tratamento térmico
Dióxido de silício
Implantação de íons
Filmes finos
topic Deutério : Tratamento térmico
Dióxido de silício
Implantação de íons
Filmes finos
description Following the observation of the large isotopic effect in D2 passivated gate dielectrics @J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 ~1996!#, we studied the behavior of deuterium in ultrathin SiO2 films by nuclear reaction analysis techniques. Accurate concentrations of deuterium in the films, deuterium depth distributions, and deuterium removal from the film upon thermal annealing in vacuum have been examined. For D2 passivated films, we found rather high concentrations of deuterium near the SiO2 /Si interface, well above both the solubility of deuterium in silica and the maximum concentration of electrically active defects at the interface. Our results suggest a complex multistep mechanism of thermally activated deuterium removal from the film, which probably consists of D detrapping, diffusion, and desorption steps.
publishDate 1998
dc.date.issued.fl_str_mv 1998
dc.date.accessioned.fl_str_mv 2016-05-10T02:07:14Z
dc.type.driver.fl_str_mv Estrangeiro
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/140631
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000095724
identifier_str_mv 0003-6951
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url http://hdl.handle.net/10183/140631
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 72, no. 4 (Jan. 1998), p. 450-452
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