Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/

Detalhes bibliográficos
Autor(a) principal: Baumvol, Israel Jacob Rabin
Data de Publicação: 1999
Outros Autores: Krug, Cristiano, Stedile, Fernanda Chiarello, Gorris, Franck, Schulte, Wolf Hartmut
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/103618
Resumo: The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29Si on a Si~111! substrate and determining the 29Si profiles, with subnanometric depth resolution, before and after oxidation in 50 mbar of dry O2 at 1000 °C for 60 min. The results constitute an experimental confirmation of a widely held belief that Si does not diffuse through the growing oxide to react with oxygen at the gas/oxide interface, leaving O2 as the only mobile species. [S0163-1829~99!10127-9]
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spelling Baumvol, Israel Jacob RabinKrug, CristianoStedile, Fernanda ChiarelloGorris, FranckSchulte, Wolf Hartmut2014-09-23T02:12:22Z19991098-0121http://hdl.handle.net/10183/103618000055623The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29Si on a Si~111! substrate and determining the 29Si profiles, with subnanometric depth resolution, before and after oxidation in 50 mbar of dry O2 at 1000 °C for 60 min. The results constitute an experimental confirmation of a widely held belief that Si does not diffuse through the growing oxide to react with oxygen at the gas/oxide interface, leaving O2 as the only mobile species. [S0163-1829~99!10127-9]application/pdfengPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 60, no. 3 (July 1999), p. 1492-1495Filmes finosSilícioOxigênioOxidaçãoExpansão térmicaIsotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000055623.pdf000055623.pdfTexto completo (inglês)application/pdf67641http://www.lume.ufrgs.br/bitstream/10183/103618/1/000055623.pdfdedbe8c9d32f27bf2eb546694d7481adMD51TEXT000055623.pdf.txt000055623.pdf.txtExtracted Texttext/plain17412http://www.lume.ufrgs.br/bitstream/10183/103618/2/000055623.pdf.txte7259d5b74804e54608c8ffa049c1abcMD52THUMBNAIL000055623.pdf.jpg000055623.pdf.jpgGenerated Thumbnailimage/jpeg1956http://www.lume.ufrgs.br/bitstream/10183/103618/3/000055623.pdf.jpgcebcd799785e3345bc3e63cf96432be7MD5310183/1036182023-06-16 03:34:01.426501oai:www.lume.ufrgs.br:10183/103618Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-06-16T06:34:01Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
title Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
spellingShingle Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
Baumvol, Israel Jacob Rabin
Filmes finos
Silício
Oxigênio
Oxidação
Expansão térmica
title_short Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
title_full Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
title_fullStr Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
title_full_unstemmed Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
title_sort Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
author Baumvol, Israel Jacob Rabin
author_facet Baumvol, Israel Jacob Rabin
Krug, Cristiano
Stedile, Fernanda Chiarello
Gorris, Franck
Schulte, Wolf Hartmut
author_role author
author2 Krug, Cristiano
Stedile, Fernanda Chiarello
Gorris, Franck
Schulte, Wolf Hartmut
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Baumvol, Israel Jacob Rabin
Krug, Cristiano
Stedile, Fernanda Chiarello
Gorris, Franck
Schulte, Wolf Hartmut
dc.subject.por.fl_str_mv Filmes finos
Silício
Oxigênio
Oxidação
Expansão térmica
topic Filmes finos
Silício
Oxigênio
Oxidação
Expansão térmica
description The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29Si on a Si~111! substrate and determining the 29Si profiles, with subnanometric depth resolution, before and after oxidation in 50 mbar of dry O2 at 1000 °C for 60 min. The results constitute an experimental confirmation of a widely held belief that Si does not diffuse through the growing oxide to react with oxygen at the gas/oxide interface, leaving O2 as the only mobile species. [S0163-1829~99!10127-9]
publishDate 1999
dc.date.issued.fl_str_mv 1999
dc.date.accessioned.fl_str_mv 2014-09-23T02:12:22Z
dc.type.driver.fl_str_mv Estrangeiro
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/103618
dc.identifier.issn.pt_BR.fl_str_mv 1098-0121
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url http://hdl.handle.net/10183/103618
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 60, no. 3 (July 1999), p. 1492-1495
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