Multicamadas de ZnO aplicadas a dispositivos memresistores
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Tipo de documento: | Tese |
Idioma: | por |
Título da fonte: | Repositório Institucional da UFS |
Texto Completo: | http://ri.ufs.br/jspui/handle/riufs/12015 |
Resumo: | We present a study on the applicability of multilayer films based on ZnO as memresistors devices. Two groups of films were produced by the Sputtering deposition technique. In the group I (ITO/ZnO/Fe/ZnO and ITO/ZnO/Fe/ZnO/Fe/ZnO) samples were analyzed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and magnetization measurements using a vibrating sample magnetometer (VSM), X-ray refletometry (RRX), and an electrical characterization. The samples presented a good performance as memresistor device, with good resistive state retention time (4 × 103s) and differentiation between expressive states, it was also determined the main conduction mechanism present in the sample. We identified the sample thicknesses using the SEM technique that had a good agreement with RRX. The magnetization measurements revealed the presence of weak ferromagnetic behavior at room temperature attributed to the presence of Fe in the film, resistivity measurements as a function of the field suggest the possible presence of giant magnetoresistance effect in the samples. For group II (ITO / ZnO / Gd2O3 / ZnO) was performed the electrical characterization of the samples that indicated the degradation of the memresistor effect proportionally to the increase of Gd2O3 layer deposition time. |
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Santos, Yvens Pereira dosMacêdo, Marcelo Andrade2019-10-11T17:57:54Z2019-10-11T17:57:54Z2019-06-26SANTOS, Yvens Pereira dos. Multicamadas de ZnO aplicadas a dispositivos memresistores. 2019. 100 f. Tese (Doutorado em Física) - Universidade Federal de Sergipe, São Cristóvão, SE, 2019.http://ri.ufs.br/jspui/handle/riufs/12015We present a study on the applicability of multilayer films based on ZnO as memresistors devices. Two groups of films were produced by the Sputtering deposition technique. In the group I (ITO/ZnO/Fe/ZnO and ITO/ZnO/Fe/ZnO/Fe/ZnO) samples were analyzed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and magnetization measurements using a vibrating sample magnetometer (VSM), X-ray refletometry (RRX), and an electrical characterization. The samples presented a good performance as memresistor device, with good resistive state retention time (4 × 103s) and differentiation between expressive states, it was also determined the main conduction mechanism present in the sample. We identified the sample thicknesses using the SEM technique that had a good agreement with RRX. The magnetization measurements revealed the presence of weak ferromagnetic behavior at room temperature attributed to the presence of Fe in the film, resistivity measurements as a function of the field suggest the possible presence of giant magnetoresistance effect in the samples. For group II (ITO / ZnO / Gd2O3 / ZnO) was performed the electrical characterization of the samples that indicated the degradation of the memresistor effect proportionally to the increase of Gd2O3 layer deposition time.Apresentamos um estudo sobre a aplicabilidade de filmes multicamadas baseadas em ZnO como dispositivos memresistores. Foram produzidos dois grupos de filmes através da técnica de deposição Sputtering. No grupo I (ITO/ZnO/Fe/ZnO e ITO/ZnO/Fe/ZnO/Fe/ZnO) as amostras foram analisadas através de difratometria de raios X (DRX), microscopia eletrônica de varredura (MEV) e medidas de magnetização utilizando um magnetômetro de amostra vibrante (VSM), reflectometria de raios X (RRX), além de uma caracterização elétrica. As amostras apresentaram um bom desempenho como dispositivo memresistor, com bom tempo de retenção de estados resistivo (4×103s) e diferenciação entre os estados expressiva, também foi determinado os principais mecanismo de condução presentes na amostra. Identificamos as espessuras das amostras através da técnica de MEV que teve uma boa concordância com a RRX. As medidas de magnetização revelaram a presença de comportamento ferromagnético fraco em temperatura ambiente atribuída a presença do Fe no filme e as medidas de resistividade em função do campo sugerem a possível presença de efeito de magnetoresistência gigante nas amostras. Para o grupo II (ITO/ZnO/Gd2O3/ZnO) foi realizada a caracterização elétrica das amostras que indicaram a degradação do efeito memresistor proporcionalmente ao aumento do tempo de deposição da camada de Gd2O3.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPESSão Cristóvão, SEporFísicaFilmes multicamadasDispositivos memresistoresÓxido de zinco (ZnO)CIENCIAS EXATAS E DA TERRA::FISICAMulticamadas de ZnO aplicadas a dispositivos memresistoresinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/doctoralThesisPós-Graduação em FísicaUFSreponame:Repositório Institucional da UFSinstname:Universidade Federal de Sergipe (UFS)instacron:UFSinfo:eu-repo/semantics/openAccessTEXTYVENS_PEREIRA_SANTOS.pdf.txtYVENS_PEREIRA_SANTOS.pdf.txtExtracted texttext/plain161143https://ri.ufs.br/jspui/bitstream/riufs/12015/3/YVENS_PEREIRA_SANTOS.pdf.txt43afbb367a3483cbaff45868ccfd1870MD53THUMBNAILYVENS_PEREIRA_SANTOS.pdf.jpgYVENS_PEREIRA_SANTOS.pdf.jpgGenerated Thumbnailimage/jpeg1420https://ri.ufs.br/jspui/bitstream/riufs/12015/4/YVENS_PEREIRA_SANTOS.pdf.jpg73a6c95cbe869a7f42f982cbff1c861cMD54LICENSElicense.txtlicense.txttext/plain; charset=utf-81475https://ri.ufs.br/jspui/bitstream/riufs/12015/1/license.txt098cbbf65c2c15e1fb2e49c5d306a44cMD51ORIGINALYVENS_PEREIRA_SANTOS.pdfYVENS_PEREIRA_SANTOS.pdfapplication/pdf5476273https://ri.ufs.br/jspui/bitstream/riufs/12015/2/YVENS_PEREIRA_SANTOS.pdf476e37e7e1c1585e328d3854436cf6e2MD52riufs/120152019-10-11 14:57:54.842oai:ufs.br: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Repositório InstitucionalPUBhttps://ri.ufs.br/oai/requestrepositorio@academico.ufs.bropendoar:2019-10-11T17:57:54Repositório Institucional da UFS - Universidade Federal de Sergipe (UFS)false |
dc.title.pt_BR.fl_str_mv |
Multicamadas de ZnO aplicadas a dispositivos memresistores |
title |
Multicamadas de ZnO aplicadas a dispositivos memresistores |
spellingShingle |
Multicamadas de ZnO aplicadas a dispositivos memresistores Santos, Yvens Pereira dos Física Filmes multicamadas Dispositivos memresistores Óxido de zinco (ZnO) CIENCIAS EXATAS E DA TERRA::FISICA |
title_short |
Multicamadas de ZnO aplicadas a dispositivos memresistores |
title_full |
Multicamadas de ZnO aplicadas a dispositivos memresistores |
title_fullStr |
Multicamadas de ZnO aplicadas a dispositivos memresistores |
title_full_unstemmed |
Multicamadas de ZnO aplicadas a dispositivos memresistores |
title_sort |
Multicamadas de ZnO aplicadas a dispositivos memresistores |
author |
Santos, Yvens Pereira dos |
author_facet |
Santos, Yvens Pereira dos |
author_role |
author |
dc.contributor.author.fl_str_mv |
Santos, Yvens Pereira dos |
dc.contributor.advisor1.fl_str_mv |
Macêdo, Marcelo Andrade |
contributor_str_mv |
Macêdo, Marcelo Andrade |
dc.subject.por.fl_str_mv |
Física Filmes multicamadas Dispositivos memresistores Óxido de zinco (ZnO) |
topic |
Física Filmes multicamadas Dispositivos memresistores Óxido de zinco (ZnO) CIENCIAS EXATAS E DA TERRA::FISICA |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA |
description |
We present a study on the applicability of multilayer films based on ZnO as memresistors devices. Two groups of films were produced by the Sputtering deposition technique. In the group I (ITO/ZnO/Fe/ZnO and ITO/ZnO/Fe/ZnO/Fe/ZnO) samples were analyzed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and magnetization measurements using a vibrating sample magnetometer (VSM), X-ray refletometry (RRX), and an electrical characterization. The samples presented a good performance as memresistor device, with good resistive state retention time (4 × 103s) and differentiation between expressive states, it was also determined the main conduction mechanism present in the sample. We identified the sample thicknesses using the SEM technique that had a good agreement with RRX. The magnetization measurements revealed the presence of weak ferromagnetic behavior at room temperature attributed to the presence of Fe in the film, resistivity measurements as a function of the field suggest the possible presence of giant magnetoresistance effect in the samples. For group II (ITO / ZnO / Gd2O3 / ZnO) was performed the electrical characterization of the samples that indicated the degradation of the memresistor effect proportionally to the increase of Gd2O3 layer deposition time. |
publishDate |
2019 |
dc.date.accessioned.fl_str_mv |
2019-10-11T17:57:54Z |
dc.date.available.fl_str_mv |
2019-10-11T17:57:54Z |
dc.date.issued.fl_str_mv |
2019-06-26 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/doctoralThesis |
format |
doctoralThesis |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
SANTOS, Yvens Pereira dos. Multicamadas de ZnO aplicadas a dispositivos memresistores. 2019. 100 f. Tese (Doutorado em Física) - Universidade Federal de Sergipe, São Cristóvão, SE, 2019. |
dc.identifier.uri.fl_str_mv |
http://ri.ufs.br/jspui/handle/riufs/12015 |
identifier_str_mv |
SANTOS, Yvens Pereira dos. Multicamadas de ZnO aplicadas a dispositivos memresistores. 2019. 100 f. Tese (Doutorado em Física) - Universidade Federal de Sergipe, São Cristóvão, SE, 2019. |
url |
http://ri.ufs.br/jspui/handle/riufs/12015 |
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por |
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por |
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Pós-Graduação em Física |
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UFS |
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