Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering

Detalhes bibliográficos
Autor(a) principal: Santos, Ikaro Arthur Dantas
Data de Publicação: 2018
Tipo de documento: Dissertação
Idioma: por
Título da fonte: Repositório Institucional da UFS
Texto Completo: http://ri.ufs.br/jspui/handle/riufs/10595
Resumo: Zr-Hf-N and Zr-Hf thin films were deposited by reactive magnetron sputtering in order to verify the influence of small hafnium contents that are present as contaminants on zirconium deposition targets. For this purpose different hafnium contents in the films were intentionally added by varying the deposition power. The samples were characterized by X-ray diffraction (XRD), dispersive energy X-ray spectroscopy (EDS), Rutherford backscattering spectroscopy (RBS) and nanohardness analyzes. The ZrHfN thin films were deposited and had a concentration of at% Hf of 0.49; 0.56; 0.80; 1.87 and 2.70. The deposited Zr-Hf alloys exhibited hafnium contents at up to 1.21%; 1.24; 4.35; 7.94 and 11.49. The crystalline phase obtained for the nitride films had a cubic face centered structure (FCC) and was not modified by the increase in hafnium content. The alloys presented amorphous with some crystalline regions of hexagonal structure. The hardness values ranged from 21.4 to 25.1 GPa for nitrides and from 6.1 to 8.4 GPa for zirconium alloys.
id UFS-2_f9623fd24cddec9542453a8799483d49
oai_identifier_str oai:ufs.br:riufs/10595
network_acronym_str UFS-2
network_name_str Repositório Institucional da UFS
repository_id_str
spelling Santos, Ikaro Arthur DantasTentardini, Eduardo Kirinus2019-03-01T19:39:02Z2019-03-01T19:39:02Z2018-10SANTOS, Ikaro Arthur Dantas. Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering. 2018. 60 f. Dissertação (Mestrado em Ciência e Engenharia de Materiais) - Universidade Federal de Sergipe, São Cristóvão, SE, 2018.http://ri.ufs.br/jspui/handle/riufs/10595Zr-Hf-N and Zr-Hf thin films were deposited by reactive magnetron sputtering in order to verify the influence of small hafnium contents that are present as contaminants on zirconium deposition targets. For this purpose different hafnium contents in the films were intentionally added by varying the deposition power. The samples were characterized by X-ray diffraction (XRD), dispersive energy X-ray spectroscopy (EDS), Rutherford backscattering spectroscopy (RBS) and nanohardness analyzes. The ZrHfN thin films were deposited and had a concentration of at% Hf of 0.49; 0.56; 0.80; 1.87 and 2.70. The deposited Zr-Hf alloys exhibited hafnium contents at up to 1.21%; 1.24; 4.35; 7.94 and 11.49. The crystalline phase obtained for the nitride films had a cubic face centered structure (FCC) and was not modified by the increase in hafnium content. The alloys presented amorphous with some crystalline regions of hexagonal structure. The hardness values ranged from 21.4 to 25.1 GPa for nitrides and from 6.1 to 8.4 GPa for zirconium alloys.Filmes finos de Zr-Hf-N e Zr-Hf foram depositados por magnetron sputtering reativo com o intuito de verificar a influência de pequenos teores de háfnio que estão presentes como contaminantes nos alvos de deposição de zircônio. Para isto foram adicionados intencionalmente diferentes teores de háfnio nos filmes através da variação da potência de deposição. As amostras foram caracterizadas por difração de raios-X (DRX), espectroscopia de raios-Xpor energia dispersiva (EDS), espectroscopia por retroespalhamento Rutherford (RBS) e análises de nanodureza. Os filmes finos de ZrHfN foram depositados e apresentaram concentração em at.% de Hf de 0,49; 0,56; 0,80; 1,87 e 2,70. As ligas Zr-Hf depositadas apresentaram teores de háfnio em at.% de 1,21; 1,24; 4,35; 7,94 e 11,49. A fase cristalina obtida para os filmes os nitretos tinha estrutura cúbica de face centrada (CFC) e não foi modificada pelo aumento do teor de háfnio. As ligas se apresentaram amorfas com algumas regiões cristalinas de estrutura hexagonal. Os valores de dureza variaram de 21,4 a 25,1 GPa para os nitretos e de 6,1 a 8,4 GPa para as ligas de zircônio.Conselho Nacional de Pesquisa e Desenvolvimento Científico e Tecnológico - CNPqSão Cristóvão, SEporCiência dos materiaisFilmes finosZircônioMagnetronsZrHfNZrHfMagnetron sputtering reativoThin filmsReactive magnetron sputteringENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICAInfluência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputteringInfluence of Hf content in thin films of Zr and ZrN deposited by magnetron sputteringinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisPós-Graduação em Ciência e Engenharia de MateriaisUniversidade Federal de Sergipereponame:Repositório Institucional da UFSinstname:Universidade Federal de Sergipe (UFS)instacron:UFSinfo:eu-repo/semantics/openAccessTEXTIKARO_ARTHUR_DANTAS_SANTOS.pdf.txtIKARO_ARTHUR_DANTAS_SANTOS.pdf.txtExtracted texttext/plain91285https://ri.ufs.br/jspui/bitstream/riufs/10595/3/IKARO_ARTHUR_DANTAS_SANTOS.pdf.txtbb1fc02c715df0448f0514baaf62b911MD53THUMBNAILIKARO_ARTHUR_DANTAS_SANTOS.pdf.jpgIKARO_ARTHUR_DANTAS_SANTOS.pdf.jpgGenerated Thumbnailimage/jpeg1233https://ri.ufs.br/jspui/bitstream/riufs/10595/4/IKARO_ARTHUR_DANTAS_SANTOS.pdf.jpg6f5537b4d797f6e5d2b19dadc8ce96f4MD54LICENSElicense.txtlicense.txttext/plain; charset=utf-81475https://ri.ufs.br/jspui/bitstream/riufs/10595/1/license.txt098cbbf65c2c15e1fb2e49c5d306a44cMD51ORIGINALIKARO_ARTHUR_DANTAS_SANTOS.pdfIKARO_ARTHUR_DANTAS_SANTOS.pdfapplication/pdf1917226https://ri.ufs.br/jspui/bitstream/riufs/10595/2/IKARO_ARTHUR_DANTAS_SANTOS.pdf02cb05b8a2b48ce41c3ab801444a1f37MD52riufs/105952019-03-01 16:39:03.986oai:ufs.br:riufs/10595TElDRU7Dh0EgREUgRElTVFJJQlVJw4fDg08gTsODTy1FWENMVVNJVkEKCkNvbSBhIGFwcmVzZW50YcOnw6NvIGRlc3RhIGxpY2Vuw6dhLCB2b2PDqiAobyBhdXRvcihlcykgb3UgbyB0aXR1bGFyIGRvcyBkaXJlaXRvcyBkZSBhdXRvcikgY29uY2VkZSDDoCBVbml2ZXJzaWRhZGUgRmVkZXJhbCBkZSBTZXJnaXBlIG8gZGlyZWl0byBuw6NvLWV4Y2x1c2l2byBkZSByZXByb2R1emlyIHNldSB0cmFiYWxobyBubyBmb3JtYXRvIGVsZXRyw7RuaWNvLCBpbmNsdWluZG8gb3MgZm9ybWF0b3Mgw6F1ZGlvIG91IHbDrWRlby4KClZvY8OqIGNvbmNvcmRhIHF1ZSBhIFVuaXZlcnNpZGFkZSBGZWRlcmFsIGRlIFNlcmdpcGUgcG9kZSwgc2VtIGFsdGVyYXIgbyBjb250ZcO6ZG8sIHRyYW5zcG9yIHNldSB0cmFiYWxobyBwYXJhIHF1YWxxdWVyIG1laW8gb3UgZm9ybWF0byBwYXJhIGZpbnMgZGUgcHJlc2VydmHDp8Ojby4KClZvY8OqIHRhbWLDqW0gY29uY29yZGEgcXVlIGEgVW5pdmVyc2lkYWRlIEZlZGVyYWwgZGUgU2VyZ2lwZSBwb2RlIG1hbnRlciBtYWlzIGRlIHVtYSBjw7NwaWEgZGUgc2V1IHRyYWJhbGhvIHBhcmEgZmlucyBkZSBzZWd1cmFuw6dhLCBiYWNrLXVwIGUgcHJlc2VydmHDp8Ojby4KClZvY8OqIGRlY2xhcmEgcXVlIHNldSB0cmFiYWxobyDDqSBvcmlnaW5hbCBlIHF1ZSB2b2PDqiB0ZW0gbyBwb2RlciBkZSBjb25jZWRlciBvcyBkaXJlaXRvcyBjb250aWRvcyBuZXN0YSBsaWNlbsOnYS4gVm9jw6ogdGFtYsOpbSBkZWNsYXJhIHF1ZSBvIGRlcMOzc2l0bywgcXVlIHNlamEgZGUgc2V1IGNvbmhlY2ltZW50bywgbsOjbyBpbmZyaW5nZSBkaXJlaXRvcyBhdXRvcmFpcyBkZSBuaW5ndcOpbS4KCkNhc28gbyB0cmFiYWxobyBjb250ZW5oYSBtYXRlcmlhbCBxdWUgdm9jw6ogbsOjbyBwb3NzdWkgYSB0aXR1bGFyaWRhZGUgZG9zIGRpcmVpdG9zIGF1dG9yYWlzLCB2b2PDqiBkZWNsYXJhIHF1ZSBvYnRldmUgYSBwZXJtaXNzw6NvIGlycmVzdHJpdGEgZG8gZGV0ZW50b3IgZG9zIGRpcmVpdG9zIGF1dG9yYWlzIHBhcmEgY29uY2VkZXIgw6AgVW5pdmVyc2lkYWRlIEZlZGVyYWwgZGUgU2VyZ2lwZSBvcyBkaXJlaXRvcyBhcHJlc2VudGFkb3MgbmVzdGEgbGljZW7Dp2EsIGUgcXVlIGVzc2UgbWF0ZXJpYWwgZGUgcHJvcHJpZWRhZGUgZGUgdGVyY2Vpcm9zIGVzdMOhIGNsYXJhbWVudGUgaWRlbnRpZmljYWRvIGUgcmVjb25oZWNpZG8gbm8gdGV4dG8gb3Ugbm8gY29udGXDumRvLgoKQSBVbml2ZXJzaWRhZGUgRmVkZXJhbCBkZSBTZXJnaXBlIHNlIGNvbXByb21ldGUgYSBpZGVudGlmaWNhciBjbGFyYW1lbnRlIG8gc2V1IG5vbWUocykgb3UgbyhzKSBub21lKHMpIGRvKHMpIApkZXRlbnRvcihlcykgZG9zIGRpcmVpdG9zIGF1dG9yYWlzIGRvIHRyYWJhbGhvLCBlIG7Do28gZmFyw6EgcXVhbHF1ZXIgYWx0ZXJhw6fDo28sIGFsw6ltIGRhcXVlbGFzIGNvbmNlZGlkYXMgcG9yIGVzdGEgbGljZW7Dp2EuIAo=Repositório InstitucionalPUBhttps://ri.ufs.br/oai/requestrepositorio@academico.ufs.bropendoar:2019-03-01T19:39:03Repositório Institucional da UFS - Universidade Federal de Sergipe (UFS)false
dc.title.pt_BR.fl_str_mv Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
dc.title.alternative.eng.fl_str_mv Influence of Hf content in thin films of Zr and ZrN deposited by magnetron sputtering
title Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
spellingShingle Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
Santos, Ikaro Arthur Dantas
Ciência dos materiais
Filmes finos
Zircônio
Magnetrons
ZrHfN
ZrHf
Magnetron sputtering reativo
Thin films
Reactive magnetron sputtering
ENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICA
title_short Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
title_full Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
title_fullStr Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
title_full_unstemmed Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
title_sort Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering
author Santos, Ikaro Arthur Dantas
author_facet Santos, Ikaro Arthur Dantas
author_role author
dc.contributor.author.fl_str_mv Santos, Ikaro Arthur Dantas
dc.contributor.advisor1.fl_str_mv Tentardini, Eduardo Kirinus
contributor_str_mv Tentardini, Eduardo Kirinus
dc.subject.por.fl_str_mv Ciência dos materiais
Filmes finos
Zircônio
Magnetrons
ZrHfN
ZrHf
Magnetron sputtering reativo
topic Ciência dos materiais
Filmes finos
Zircônio
Magnetrons
ZrHfN
ZrHf
Magnetron sputtering reativo
Thin films
Reactive magnetron sputtering
ENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICA
dc.subject.eng.fl_str_mv Thin films
Reactive magnetron sputtering
dc.subject.cnpq.fl_str_mv ENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICA
description Zr-Hf-N and Zr-Hf thin films were deposited by reactive magnetron sputtering in order to verify the influence of small hafnium contents that are present as contaminants on zirconium deposition targets. For this purpose different hafnium contents in the films were intentionally added by varying the deposition power. The samples were characterized by X-ray diffraction (XRD), dispersive energy X-ray spectroscopy (EDS), Rutherford backscattering spectroscopy (RBS) and nanohardness analyzes. The ZrHfN thin films were deposited and had a concentration of at% Hf of 0.49; 0.56; 0.80; 1.87 and 2.70. The deposited Zr-Hf alloys exhibited hafnium contents at up to 1.21%; 1.24; 4.35; 7.94 and 11.49. The crystalline phase obtained for the nitride films had a cubic face centered structure (FCC) and was not modified by the increase in hafnium content. The alloys presented amorphous with some crystalline regions of hexagonal structure. The hardness values ranged from 21.4 to 25.1 GPa for nitrides and from 6.1 to 8.4 GPa for zirconium alloys.
publishDate 2018
dc.date.issued.fl_str_mv 2018-10
dc.date.accessioned.fl_str_mv 2019-03-01T19:39:02Z
dc.date.available.fl_str_mv 2019-03-01T19:39:02Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/masterThesis
format masterThesis
status_str publishedVersion
dc.identifier.citation.fl_str_mv SANTOS, Ikaro Arthur Dantas. Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering. 2018. 60 f. Dissertação (Mestrado em Ciência e Engenharia de Materiais) - Universidade Federal de Sergipe, São Cristóvão, SE, 2018.
dc.identifier.uri.fl_str_mv http://ri.ufs.br/jspui/handle/riufs/10595
identifier_str_mv SANTOS, Ikaro Arthur Dantas. Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering. 2018. 60 f. Dissertação (Mestrado em Ciência e Engenharia de Materiais) - Universidade Federal de Sergipe, São Cristóvão, SE, 2018.
url http://ri.ufs.br/jspui/handle/riufs/10595
dc.language.iso.fl_str_mv por
language por
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.program.fl_str_mv Pós-Graduação em Ciência e Engenharia de Materiais
dc.publisher.initials.fl_str_mv Universidade Federal de Sergipe
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFS
instname:Universidade Federal de Sergipe (UFS)
instacron:UFS
instname_str Universidade Federal de Sergipe (UFS)
instacron_str UFS
institution UFS
reponame_str Repositório Institucional da UFS
collection Repositório Institucional da UFS
bitstream.url.fl_str_mv https://ri.ufs.br/jspui/bitstream/riufs/10595/3/IKARO_ARTHUR_DANTAS_SANTOS.pdf.txt
https://ri.ufs.br/jspui/bitstream/riufs/10595/4/IKARO_ARTHUR_DANTAS_SANTOS.pdf.jpg
https://ri.ufs.br/jspui/bitstream/riufs/10595/1/license.txt
https://ri.ufs.br/jspui/bitstream/riufs/10595/2/IKARO_ARTHUR_DANTAS_SANTOS.pdf
bitstream.checksum.fl_str_mv bb1fc02c715df0448f0514baaf62b911
6f5537b4d797f6e5d2b19dadc8ce96f4
098cbbf65c2c15e1fb2e49c5d306a44c
02cb05b8a2b48ce41c3ab801444a1f37
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFS - Universidade Federal de Sergipe (UFS)
repository.mail.fl_str_mv repositorio@academico.ufs.br
_version_ 1802110703758213120