Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts

Detalhes bibliográficos
Autor(a) principal: Benykrelef, Souad
Data de Publicação: 2023
Outros Autores: Mansouri, Sedik, Helal , Hicham, Rabehi, Abdelaziz, Joti , Abdelaziz, Benamara , Zineb
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Revista de Engenharia Química e Química
Texto Completo: https://periodicos.ufv.br/jcec/article/view/15855
Resumo: This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.
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spelling Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contactsn-GaAsnanowireSilvaco-AtlasSchottky diodeI–V characteristicsThis research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.Universidade Federal de Viçosa - UFV2023-05-24info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://periodicos.ufv.br/jcec/article/view/1585510.18540/jcecvl9iss4pp15855-01eThe Journal of Engineering and Exact Sciences; Vol. 9 No. 4 (2023); 15855-01eThe Journal of Engineering and Exact Sciences; Vol. 9 Núm. 4 (2023); 15855-01eThe Journal of Engineering and Exact Sciences; v. 9 n. 4 (2023); 15855-01e2527-1075reponame:Revista de Engenharia Química e Químicainstname:Universidade Federal de Viçosa (UFV)instacron:UFVenghttps://periodicos.ufv.br/jcec/article/view/15855/7971Copyright (c) 2023 The Journal of Engineering and Exact Scienceshttps://creativecommons.org/licenses/by/4.0info:eu-repo/semantics/openAccessBenykrelef, SouadMansouri, Sedik Helal , HichamRabehi, AbdelazizJoti , AbdelazizBenamara , Zineb2023-06-17T11:53:52Zoai:ojs.periodicos.ufv.br:article/15855Revistahttp://www.seer.ufv.br/seer/rbeq2/index.php/req2/indexONGhttps://periodicos.ufv.br/jcec/oaijcec.journal@ufv.br||req2@ufv.br2446-94162446-9416opendoar:2023-06-17T11:53:52Revista de Engenharia Química e Química - Universidade Federal de Viçosa (UFV)false
dc.title.none.fl_str_mv Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
title Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
spellingShingle Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
Benykrelef, Souad
n-GaAs
nanowire
Silvaco-Atlas
Schottky diode
I–V characteristics
title_short Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
title_full Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
title_fullStr Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
title_full_unstemmed Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
title_sort Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
author Benykrelef, Souad
author_facet Benykrelef, Souad
Mansouri, Sedik
Helal , Hicham
Rabehi, Abdelaziz
Joti , Abdelaziz
Benamara , Zineb
author_role author
author2 Mansouri, Sedik
Helal , Hicham
Rabehi, Abdelaziz
Joti , Abdelaziz
Benamara , Zineb
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Benykrelef, Souad
Mansouri, Sedik
Helal , Hicham
Rabehi, Abdelaziz
Joti , Abdelaziz
Benamara , Zineb
dc.subject.por.fl_str_mv n-GaAs
nanowire
Silvaco-Atlas
Schottky diode
I–V characteristics
topic n-GaAs
nanowire
Silvaco-Atlas
Schottky diode
I–V characteristics
description This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.
publishDate 2023
dc.date.none.fl_str_mv 2023-05-24
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://periodicos.ufv.br/jcec/article/view/15855
10.18540/jcecvl9iss4pp15855-01e
url https://periodicos.ufv.br/jcec/article/view/15855
identifier_str_mv 10.18540/jcecvl9iss4pp15855-01e
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv https://periodicos.ufv.br/jcec/article/view/15855/7971
dc.rights.driver.fl_str_mv Copyright (c) 2023 The Journal of Engineering and Exact Sciences
https://creativecommons.org/licenses/by/4.0
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Copyright (c) 2023 The Journal of Engineering and Exact Sciences
https://creativecommons.org/licenses/by/4.0
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Universidade Federal de Viçosa - UFV
publisher.none.fl_str_mv Universidade Federal de Viçosa - UFV
dc.source.none.fl_str_mv The Journal of Engineering and Exact Sciences; Vol. 9 No. 4 (2023); 15855-01e
The Journal of Engineering and Exact Sciences; Vol. 9 Núm. 4 (2023); 15855-01e
The Journal of Engineering and Exact Sciences; v. 9 n. 4 (2023); 15855-01e
2527-1075
reponame:Revista de Engenharia Química e Química
instname:Universidade Federal de Viçosa (UFV)
instacron:UFV
instname_str Universidade Federal de Viçosa (UFV)
instacron_str UFV
institution UFV
reponame_str Revista de Engenharia Química e Química
collection Revista de Engenharia Química e Química
repository.name.fl_str_mv Revista de Engenharia Química e Química - Universidade Federal de Viçosa (UFV)
repository.mail.fl_str_mv jcec.journal@ufv.br||req2@ufv.br
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