Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy

Bibliographic Details
Main Author: Silva, S. Filipe Covre da
Publication Date: 2015
Other Authors: Lanzoni, E.M., Malachias, A., Deneke, Ch.
Format: Article
Language: eng
Source: LOCUS Repositório Institucional da UFV
Download full: https://doi.org/10.1016/j.jcrysgro.2015.02.008
http://www.locus.ufv.br/handle/123456789/21380
Summary: Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample.
id UFV_74d6ee5da64dc8e9b23fff68080c471a
oai_identifier_str oai:locus.ufv.br:123456789/21380
network_acronym_str UFV
network_name_str LOCUS Repositório Institucional da UFV
repository_id_str 2145
spelling Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxyA1. Patterned substrateA3. Molecular beam epitaxyB2. Freestanding membranesInAs growthPartly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample.Journal of Crystal Growth2018-08-23T13:34:17Z2018-08-23T13:34:17Z2015-09-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlepdfapplication/pdf0022-0248https://doi.org/10.1016/j.jcrysgro.2015.02.008http://www.locus.ufv.br/handle/123456789/21380engvolume 425, páginas 39-42, setembro 2015Elsevier B.V.info:eu-repo/semantics/openAccessSilva, S. Filipe Covre daLanzoni, E.M.Malachias, A.Deneke, Ch.reponame:LOCUS Repositório Institucional da UFVinstname:Universidade Federal de Viçosa (UFV)instacron:UFV2024-07-12T08:40:48Zoai:locus.ufv.br:123456789/21380Repositório InstitucionalPUBhttps://www.locus.ufv.br/oai/requestfabiojreis@ufv.bropendoar:21452024-07-12T08:40:48LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV)false
dc.title.none.fl_str_mv Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
title Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
spellingShingle Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
Silva, S. Filipe Covre da
A1. Patterned substrate
A3. Molecular beam epitaxy
B2. Freestanding membranes
InAs growth
title_short Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
title_full Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
title_fullStr Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
title_full_unstemmed Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
title_sort Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
author Silva, S. Filipe Covre da
author_facet Silva, S. Filipe Covre da
Lanzoni, E.M.
Malachias, A.
Deneke, Ch.
author_role author
author2 Lanzoni, E.M.
Malachias, A.
Deneke, Ch.
author2_role author
author
author
dc.contributor.author.fl_str_mv Silva, S. Filipe Covre da
Lanzoni, E.M.
Malachias, A.
Deneke, Ch.
dc.subject.por.fl_str_mv A1. Patterned substrate
A3. Molecular beam epitaxy
B2. Freestanding membranes
InAs growth
topic A1. Patterned substrate
A3. Molecular beam epitaxy
B2. Freestanding membranes
InAs growth
description Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample.
publishDate 2015
dc.date.none.fl_str_mv 2015-09-01
2018-08-23T13:34:17Z
2018-08-23T13:34:17Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv 0022-0248
https://doi.org/10.1016/j.jcrysgro.2015.02.008
http://www.locus.ufv.br/handle/123456789/21380
identifier_str_mv 0022-0248
url https://doi.org/10.1016/j.jcrysgro.2015.02.008
http://www.locus.ufv.br/handle/123456789/21380
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv volume 425, páginas 39-42, setembro 2015
dc.rights.driver.fl_str_mv Elsevier B.V.
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Elsevier B.V.
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv pdf
application/pdf
dc.publisher.none.fl_str_mv Journal of Crystal Growth
publisher.none.fl_str_mv Journal of Crystal Growth
dc.source.none.fl_str_mv reponame:LOCUS Repositório Institucional da UFV
instname:Universidade Federal de Viçosa (UFV)
instacron:UFV
instname_str Universidade Federal de Viçosa (UFV)
instacron_str UFV
institution UFV
reponame_str LOCUS Repositório Institucional da UFV
collection LOCUS Repositório Institucional da UFV
repository.name.fl_str_mv LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV)
repository.mail.fl_str_mv fabiojreis@ufv.br
_version_ 1822610739654819840

Similar Items