Projeto e construção de um sistema de crescimento epitaxial por feixe molecular

• Autor(a) principal: Gomes, Joaquim Pinto
• Data de Publicação: 2009
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: LOCUS Repositório Institucional da UFV
• Texto Completo: http://locus.ufv.br/handle/123456789/4236
• topic: Crescimento epitaxial; CdTe; MBE; Tecnologia de vácuo; Epitaxia por feixe molecular; Epitaxy growth; CdTe; MBE; Molecular beam epitaxy; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA

The epitaxial growth technique by molecular beams (Molecular Beam Epitaxy – MBE) can be considered as one of the most important for obtaining thin fine films, heterostructures and nanostructures nowadays, allowing the production of high quality layers, and it also allows the in situ monitoring of process through several techniques of characterization. This work presents the project, the construction and the initial tests of a MBE system for the growing of compounds containing cadmium, tellurium, manganese and zinc. The work shows a bibliographic revision of the main types of epitaxy, some of the main techniques of growth, the basic principles of vacuum technology and the necessary tools to the construction of the system. The detailed project of the system and its main components represented. Finally, the functioning tests of the vacuum systems, the effusion cells, the system of controlling and automation and the results obtained with the first obtained samples represented. The total cost of the system in the current configuration is approximately R$150.000 which is about as less as one fourth of one commercial system with approximately the same characteristics.