Crescimento e caracterização de filmes espessos de CdTe para a fabricação de detectores de raios-X

• Autor(a) principal: Santos, José Antônio Duarte
• Data de Publicação: 2010
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: LOCUS Repositório Institucional da UFV
• Texto Completo: http://locus.ufv.br/handle/123456789/4240
• topic: CdTe; Detector de raios-x; Filme epitaxial; HWE; CdTe; X-ray detectors; Epitaxy film; HWE; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA

The presence of nuclear radiation detectors is extremily important in various industries such as medical, astronomy and of national security. There are many types of detectors. However, the detector constructed with CdTe and CdZnTe semiconductor films has become very popular due to some characteristics as convenience, density, energy resolution and for having the possibility of operating at room temperature. In this work, a review of nuclear radiation detectors is made, especially those built with semiconductor. Here are also presented structural, superficial and electric characterization methods to inform which type of sample is the most viable for such purpose. We also present in this work the results of the of CdTe films growth using HotWall Epitaxy technique (HWE) in temperatures from 150 C and 250 C over Si (111), simple glass and glass covered with tin oxide with fluorine . It is also presented the results ofcharacterization of CdTe films by x-ray diffraction and electrical characterization by curves I x V.