Defect structure in nitrogen-rich amorphous silicon nitride films

Detalhes bibliográficos
Autor(a) principal: Yan, Baojie
Data de Publicação: 1998
Outros Autores: Dias Da Silva, J. H. [UNESP], Taylor, P. C.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/S0022-3093(98)00091-X
http://hdl.handle.net/11449/224092
Resumo: Electron spin resonance and photoluminescence measurements were carried out on nitrogen-rich, hydrogenated amorphous silicon-nitride films. Paramagnetic Si dangling bonds (K0 centers) are found in as-deposited films only after UV illumination. High temperature post-deposition annealing, followed by UV illumination, creates ESR-active, two-fold coordinated nitrogen dangling bonds (N02 centers). These two types of spin center are normally observed at room temperature. An extra component appears on the ESR spectrum measured at low temperature (6 K) for the as-deposited samples after UV illumination, at which temperature the line of the K0 center is saturated by microwave power. This component is tentatively attributed to N02 centers that are partially saturated. The photoluminescence efficiency is significantly decreased by the high temperature annealing. © 1998 Elsevier Science B.V. All rights reserved.
id UNSP_03ec987d330957a02a0dca835be15135
oai_identifier_str oai:repositorio.unesp.br:11449/224092
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Defect structure in nitrogen-rich amorphous silicon nitride filmsa-SiNx:H filmsK centerN02 centerElectron spin resonance and photoluminescence measurements were carried out on nitrogen-rich, hydrogenated amorphous silicon-nitride films. Paramagnetic Si dangling bonds (K0 centers) are found in as-deposited films only after UV illumination. High temperature post-deposition annealing, followed by UV illumination, creates ESR-active, two-fold coordinated nitrogen dangling bonds (N02 centers). These two types of spin center are normally observed at room temperature. An extra component appears on the ESR spectrum measured at low temperature (6 K) for the as-deposited samples after UV illumination, at which temperature the line of the K0 center is saturated by microwave power. This component is tentatively attributed to N02 centers that are partially saturated. The photoluminescence efficiency is significantly decreased by the high temperature annealing. © 1998 Elsevier Science B.V. All rights reserved.Depto. de Fisica-FC Campus Unesp., CEP17033-360, Bauru-SpDepartment of Physics University of Utah, Salt Lake City, UT 84112Depto. de Fisica-FC Campus Unesp., CEP17033-360, Bauru-SpUniversidade Estadual Paulista (UNESP)University of UtahYan, BaojieDias Da Silva, J. H. [UNESP]Taylor, P. C.2022-04-28T19:54:35Z2022-04-28T19:54:35Z1998-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article528-532http://dx.doi.org/10.1016/S0022-3093(98)00091-XJournal of Non-Crystalline Solids, v. 227-230, n. PART 1, p. 528-532, 1998.0022-3093http://hdl.handle.net/11449/22409210.1016/S0022-3093(98)00091-X2-s2.0-0032066501Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Non-Crystalline Solidsinfo:eu-repo/semantics/openAccess2024-04-25T17:40:30Zoai:repositorio.unesp.br:11449/224092Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T22:59:43.963984Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Defect structure in nitrogen-rich amorphous silicon nitride films
title Defect structure in nitrogen-rich amorphous silicon nitride films
spellingShingle Defect structure in nitrogen-rich amorphous silicon nitride films
Yan, Baojie
a-SiNx:H films
K center
N02 center
title_short Defect structure in nitrogen-rich amorphous silicon nitride films
title_full Defect structure in nitrogen-rich amorphous silicon nitride films
title_fullStr Defect structure in nitrogen-rich amorphous silicon nitride films
title_full_unstemmed Defect structure in nitrogen-rich amorphous silicon nitride films
title_sort Defect structure in nitrogen-rich amorphous silicon nitride films
author Yan, Baojie
author_facet Yan, Baojie
Dias Da Silva, J. H. [UNESP]
Taylor, P. C.
author_role author
author2 Dias Da Silva, J. H. [UNESP]
Taylor, P. C.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
University of Utah
dc.contributor.author.fl_str_mv Yan, Baojie
Dias Da Silva, J. H. [UNESP]
Taylor, P. C.
dc.subject.por.fl_str_mv a-SiNx:H films
K center
N02 center
topic a-SiNx:H films
K center
N02 center
description Electron spin resonance and photoluminescence measurements were carried out on nitrogen-rich, hydrogenated amorphous silicon-nitride films. Paramagnetic Si dangling bonds (K0 centers) are found in as-deposited films only after UV illumination. High temperature post-deposition annealing, followed by UV illumination, creates ESR-active, two-fold coordinated nitrogen dangling bonds (N02 centers). These two types of spin center are normally observed at room temperature. An extra component appears on the ESR spectrum measured at low temperature (6 K) for the as-deposited samples after UV illumination, at which temperature the line of the K0 center is saturated by microwave power. This component is tentatively attributed to N02 centers that are partially saturated. The photoluminescence efficiency is significantly decreased by the high temperature annealing. © 1998 Elsevier Science B.V. All rights reserved.
publishDate 1998
dc.date.none.fl_str_mv 1998-01-01
2022-04-28T19:54:35Z
2022-04-28T19:54:35Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/S0022-3093(98)00091-X
Journal of Non-Crystalline Solids, v. 227-230, n. PART 1, p. 528-532, 1998.
0022-3093
http://hdl.handle.net/11449/224092
10.1016/S0022-3093(98)00091-X
2-s2.0-0032066501
url http://dx.doi.org/10.1016/S0022-3093(98)00091-X
http://hdl.handle.net/11449/224092
identifier_str_mv Journal of Non-Crystalline Solids, v. 227-230, n. PART 1, p. 528-532, 1998.
0022-3093
10.1016/S0022-3093(98)00091-X
2-s2.0-0032066501
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Non-Crystalline Solids
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 528-532
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129479703265280