Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.sse.2021.108087 http://hdl.handle.net/11449/221842 |
Resumo: | The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, i.e., junctionless (JL) versus inversion-mode (IM) and process variations for the gate metal. The horizontal devices are characterized by 1/f noise, dominated by the number fluctuation mechanism, so that the power spectral density (PSD) is directly proportional with the trap density in the gate stack. The average 1/f noise PSD is becoming smaller going from single NW transistors on Silicon-on-Insulator substrates, to stacked horizontal NS devices on bulk silicon and, finally, vertical NWFETs with a substrate source contact. At low currents and frequencies below 1 kHz the 1/f noise in the vertical NWs is, in contrast to the horizontal devices, controlled by mobility fluctuations. In these devices white noise is observed above 1 kHz. |
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Repositório Institucional da UNESP |
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Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETsGate-All-AroundLow-frequency noiseNanosheetsNanowiresSilicon MOSFETsThe low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, i.e., junctionless (JL) versus inversion-mode (IM) and process variations for the gate metal. The horizontal devices are characterized by 1/f noise, dominated by the number fluctuation mechanism, so that the power spectral density (PSD) is directly proportional with the trap density in the gate stack. The average 1/f noise PSD is becoming smaller going from single NW transistors on Silicon-on-Insulator substrates, to stacked horizontal NS devices on bulk silicon and, finally, vertical NWFETs with a substrate source contact. At low currents and frequencies below 1 kHz the 1/f noise in the vertical NWs is, in contrast to the horizontal devices, controlled by mobility fluctuations. In these devices white noise is observed above 1 kHz.Imec, Kapeldreef 75Universidade Tecnológica Federal do ParanáUNESP Sao Paulo State UniversityLSI/PSI/USP University of Sao PauloEE Depart. KU Leuven, Kasteelpark Arenberg 10UNESP Sao Paulo State UniversityImecUniversidade Tecnológica Federal do ParanáUniversidade Estadual Paulista (UNESP)Universidade de São Paulo (USP)EE Depart. KU LeuvenSimoen, Eddyde Oliveira, Alberto ViniciusAgopian, Paula Ghedini Der [UNESP]Ritzenthaler, RomainMertens, HansHoriguchi, NaotoMartino, Joao AntonioClaeys, CorVeloso, Anabela2022-04-28T19:40:54Z2022-04-28T19:40:54Z2021-10-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.sse.2021.108087Solid-State Electronics, v. 184.0038-1101http://hdl.handle.net/11449/22184210.1016/j.sse.2021.1080872-s2.0-85108691348Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSolid-State Electronicsinfo:eu-repo/semantics/openAccess2022-04-28T19:40:54Zoai:repositorio.unesp.br:11449/221842Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:01:54.916781Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs |
title |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs |
spellingShingle |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs Simoen, Eddy Gate-All-Around Low-frequency noise Nanosheets Nanowires Silicon MOSFETs |
title_short |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs |
title_full |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs |
title_fullStr |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs |
title_full_unstemmed |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs |
title_sort |
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs |
author |
Simoen, Eddy |
author_facet |
Simoen, Eddy de Oliveira, Alberto Vinicius Agopian, Paula Ghedini Der [UNESP] Ritzenthaler, Romain Mertens, Hans Horiguchi, Naoto Martino, Joao Antonio Claeys, Cor Veloso, Anabela |
author_role |
author |
author2 |
de Oliveira, Alberto Vinicius Agopian, Paula Ghedini Der [UNESP] Ritzenthaler, Romain Mertens, Hans Horiguchi, Naoto Martino, Joao Antonio Claeys, Cor Veloso, Anabela |
author2_role |
author author author author author author author author |
dc.contributor.none.fl_str_mv |
Imec Universidade Tecnológica Federal do Paraná Universidade Estadual Paulista (UNESP) Universidade de São Paulo (USP) EE Depart. KU Leuven |
dc.contributor.author.fl_str_mv |
Simoen, Eddy de Oliveira, Alberto Vinicius Agopian, Paula Ghedini Der [UNESP] Ritzenthaler, Romain Mertens, Hans Horiguchi, Naoto Martino, Joao Antonio Claeys, Cor Veloso, Anabela |
dc.subject.por.fl_str_mv |
Gate-All-Around Low-frequency noise Nanosheets Nanowires Silicon MOSFETs |
topic |
Gate-All-Around Low-frequency noise Nanosheets Nanowires Silicon MOSFETs |
description |
The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, i.e., junctionless (JL) versus inversion-mode (IM) and process variations for the gate metal. The horizontal devices are characterized by 1/f noise, dominated by the number fluctuation mechanism, so that the power spectral density (PSD) is directly proportional with the trap density in the gate stack. The average 1/f noise PSD is becoming smaller going from single NW transistors on Silicon-on-Insulator substrates, to stacked horizontal NS devices on bulk silicon and, finally, vertical NWFETs with a substrate source contact. At low currents and frequencies below 1 kHz the 1/f noise in the vertical NWs is, in contrast to the horizontal devices, controlled by mobility fluctuations. In these devices white noise is observed above 1 kHz. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-10-01 2022-04-28T19:40:54Z 2022-04-28T19:40:54Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.sse.2021.108087 Solid-State Electronics, v. 184. 0038-1101 http://hdl.handle.net/11449/221842 10.1016/j.sse.2021.108087 2-s2.0-85108691348 |
url |
http://dx.doi.org/10.1016/j.sse.2021.108087 http://hdl.handle.net/11449/221842 |
identifier_str_mv |
Solid-State Electronics, v. 184. 0038-1101 10.1016/j.sse.2021.108087 2-s2.0-85108691348 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Solid-State Electronics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129013569290240 |