Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET

Detalhes bibliográficos
Autor(a) principal: Carvalho, Henrique L.
Data de Publicação: 2022
Outros Autores: Rangel, Ricardo C., Sasaki, Katia R. A. [UNESP], Agopian, Paula G. D. [UNESP], Yojo, Leonardo S., Martino, Joao A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/SBMICRO55822.2022.9880960
http://hdl.handle.net/11449/246010
Resumo: This work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET.
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spelling Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFETBESOI MOSFETaluminumreconfigurable deviceSchottky contactsource and drain contactsThis work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET.LSI/PSI/USP University of Sao PauloFATEC-SP Faculdade de Tecnologia de Sao PauloUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)Faculdade de Tecnologia de Sao PauloUniversidade Estadual Paulista (UNESP)Carvalho, Henrique L.Rangel, Ricardo C.Sasaki, Katia R. A. [UNESP]Agopian, Paula G. D. [UNESP]Yojo, Leonardo S.Martino, Joao A.2023-07-29T12:29:20Z2023-07-29T12:29:20Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMICRO55822.2022.988096036th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings.http://hdl.handle.net/11449/24601010.1109/SBMICRO55822.2022.98809602-s2.0-85139234763Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedingsinfo:eu-repo/semantics/openAccess2023-07-29T12:29:20Zoai:repositorio.unesp.br:11449/246010Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-07-29T12:29:20Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
title Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
spellingShingle Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
Carvalho, Henrique L.
BESOI MOSFET
aluminum
reconfigurable device
Schottky contact
source and drain contacts
title_short Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
title_full Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
title_fullStr Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
title_full_unstemmed Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
title_sort Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
author Carvalho, Henrique L.
author_facet Carvalho, Henrique L.
Rangel, Ricardo C.
Sasaki, Katia R. A. [UNESP]
Agopian, Paula G. D. [UNESP]
Yojo, Leonardo S.
Martino, Joao A.
author_role author
author2 Rangel, Ricardo C.
Sasaki, Katia R. A. [UNESP]
Agopian, Paula G. D. [UNESP]
Yojo, Leonardo S.
Martino, Joao A.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Faculdade de Tecnologia de Sao Paulo
Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv Carvalho, Henrique L.
Rangel, Ricardo C.
Sasaki, Katia R. A. [UNESP]
Agopian, Paula G. D. [UNESP]
Yojo, Leonardo S.
Martino, Joao A.
dc.subject.por.fl_str_mv BESOI MOSFET
aluminum
reconfigurable device
Schottky contact
source and drain contacts
topic BESOI MOSFET
aluminum
reconfigurable device
Schottky contact
source and drain contacts
description This work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET.
publishDate 2022
dc.date.none.fl_str_mv 2022-01-01
2023-07-29T12:29:20Z
2023-07-29T12:29:20Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/SBMICRO55822.2022.9880960
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings.
http://hdl.handle.net/11449/246010
10.1109/SBMICRO55822.2022.9880960
2-s2.0-85139234763
url http://dx.doi.org/10.1109/SBMICRO55822.2022.9880960
http://hdl.handle.net/11449/246010
identifier_str_mv 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings.
10.1109/SBMICRO55822.2022.9880960
2-s2.0-85139234763
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1803649701753389056

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