Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/SBMICRO55822.2022.9880960 http://hdl.handle.net/11449/246010 |
Resumo: | This work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET. |
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Repositório Institucional da UNESP |
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Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFETBESOI MOSFETaluminumreconfigurable deviceSchottky contactsource and drain contactsThis work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET.LSI/PSI/USP University of Sao PauloFATEC-SP Faculdade de Tecnologia de Sao PauloUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)Faculdade de Tecnologia de Sao PauloUniversidade Estadual Paulista (UNESP)Carvalho, Henrique L.Rangel, Ricardo C.Sasaki, Katia R. A. [UNESP]Agopian, Paula G. D. [UNESP]Yojo, Leonardo S.Martino, Joao A.2023-07-29T12:29:20Z2023-07-29T12:29:20Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMICRO55822.2022.988096036th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings.http://hdl.handle.net/11449/24601010.1109/SBMICRO55822.2022.98809602-s2.0-85139234763Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedingsinfo:eu-repo/semantics/openAccess2023-07-29T12:29:20Zoai:repositorio.unesp.br:11449/246010Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:35:48.201477Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET |
title |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET |
spellingShingle |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET Carvalho, Henrique L. BESOI MOSFET aluminum reconfigurable device Schottky contact source and drain contacts |
title_short |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET |
title_full |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET |
title_fullStr |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET |
title_full_unstemmed |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET |
title_sort |
Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET |
author |
Carvalho, Henrique L. |
author_facet |
Carvalho, Henrique L. Rangel, Ricardo C. Sasaki, Katia R. A. [UNESP] Agopian, Paula G. D. [UNESP] Yojo, Leonardo S. Martino, Joao A. |
author_role |
author |
author2 |
Rangel, Ricardo C. Sasaki, Katia R. A. [UNESP] Agopian, Paula G. D. [UNESP] Yojo, Leonardo S. Martino, Joao A. |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Faculdade de Tecnologia de Sao Paulo Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
Carvalho, Henrique L. Rangel, Ricardo C. Sasaki, Katia R. A. [UNESP] Agopian, Paula G. D. [UNESP] Yojo, Leonardo S. Martino, Joao A. |
dc.subject.por.fl_str_mv |
BESOI MOSFET aluminum reconfigurable device Schottky contact source and drain contacts |
topic |
BESOI MOSFET aluminum reconfigurable device Schottky contact source and drain contacts |
description |
This work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-01-01 2023-07-29T12:29:20Z 2023-07-29T12:29:20Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/SBMICRO55822.2022.9880960 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings. http://hdl.handle.net/11449/246010 10.1109/SBMICRO55822.2022.9880960 2-s2.0-85139234763 |
url |
http://dx.doi.org/10.1109/SBMICRO55822.2022.9880960 http://hdl.handle.net/11449/246010 |
identifier_str_mv |
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings. 10.1109/SBMICRO55822.2022.9880960 2-s2.0-85139234763 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128832129990656 |