Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ISAF.2016.7578084 http://hdl.handle.net/11449/169095 |
Resumo: | Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases. |
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Nanoscale polarization relaxation and piezoelectric properties of SBN thin filmspiezoresponsepolarization relaxationSBN filmsRandomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.Department of Physics and Chemistry São Paulo State University (UNESP)Department of Physics and CICECO University of AveiroInstitute of Natural Sciences Ural Federal UniversityDepartment of Physics and Chemistry São Paulo State University (UNESP)Universidade Estadual Paulista (Unesp)University of AveiroUral Federal UniversityMelo, M. [UNESP]Araujo, E. B. [UNESP]Ivanov, M.Shur, V. Y.Kholkin, A. L.2018-12-11T16:44:26Z2018-12-11T16:44:26Z2016-09-27info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/ISAF.2016.75780842016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016.http://hdl.handle.net/11449/16909510.1109/ISAF.2016.75780842-s2.0-84994180663Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016info:eu-repo/semantics/openAccess2021-10-23T21:47:04Zoai:repositorio.unesp.br:11449/169095Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:42:26.276027Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
spellingShingle |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films Melo, M. [UNESP] piezoresponse polarization relaxation SBN films |
title_short |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_full |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_fullStr |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_full_unstemmed |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_sort |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
author |
Melo, M. [UNESP] |
author_facet |
Melo, M. [UNESP] Araujo, E. B. [UNESP] Ivanov, M. Shur, V. Y. Kholkin, A. L. |
author_role |
author |
author2 |
Araujo, E. B. [UNESP] Ivanov, M. Shur, V. Y. Kholkin, A. L. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) University of Aveiro Ural Federal University |
dc.contributor.author.fl_str_mv |
Melo, M. [UNESP] Araujo, E. B. [UNESP] Ivanov, M. Shur, V. Y. Kholkin, A. L. |
dc.subject.por.fl_str_mv |
piezoresponse polarization relaxation SBN films |
topic |
piezoresponse polarization relaxation SBN films |
description |
Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-09-27 2018-12-11T16:44:26Z 2018-12-11T16:44:26Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ISAF.2016.7578084 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. http://hdl.handle.net/11449/169095 10.1109/ISAF.2016.7578084 2-s2.0-84994180663 |
url |
http://dx.doi.org/10.1109/ISAF.2016.7578084 http://hdl.handle.net/11449/169095 |
identifier_str_mv |
2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016. 10.1109/ISAF.2016.7578084 2-s2.0-84994180663 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128405492727808 |