Electronic and optical properties of amorphous GaSe thin films

Detalhes bibliográficos
Autor(a) principal: Siqueira, M. C.
Data de Publicação: 2016
Outros Autores: Machado, K. D., Serbena, J. P. M., Hummelgen, I. A., Stolf, S. F., Azevedo, C. G. G. de [UNESP], Silva, J. H. D. da [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/s10854-016-4711-2
http://hdl.handle.net/11449/161610
Resumo: The eletronic and optical properties of amorphous GaSe thin films produced by vacuum evaporation were investigated using X-ray photoemission spectroscopy (XPS) and transmittance spectroscopy techniques. XPS measurements allowed the determination of the valence band energy and showed the chemical bonding and the charge transfer between Se and Ga atoms. Transmittance measurements allowed the determination of the optical gap, refractive index and extinction coefficient in the low and high absorption regions. Using the Wemple and DiDomenico single oscillator model we also found the oscillator and the dispersive energies. From the valence band and optical gap energies, the conduction band was found and an energy level diagram for f-GaSe is proposed.
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spelling Electronic and optical properties of amorphous GaSe thin filmsThe eletronic and optical properties of amorphous GaSe thin films produced by vacuum evaporation were investigated using X-ray photoemission spectroscopy (XPS) and transmittance spectroscopy techniques. XPS measurements allowed the determination of the valence band energy and showed the chemical bonding and the charge transfer between Se and Ga atoms. Transmittance measurements allowed the determination of the optical gap, refractive index and extinction coefficient in the low and high absorption regions. Using the Wemple and DiDomenico single oscillator model we also found the oscillator and the dispersive energies. From the valence band and optical gap energies, the conduction band was found and an energy level diagram for f-GaSe is proposed.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)LNLSFac Tecnol SENAI CIC, CIC, R Senador Accioly Filho 298, BR-81310000 Curitiba, PR, BrazilUniv Fed Parana, Dept Fis, Ctr Polit, BR-81531990 Curitiba, PR, BrazilUNIOESTE, Ctr Engn & Ciencias Exatas, BR-85903000 Toledo, PR, BrazilUniv Estadual Paulista, Dept Fis, BR-17033360 Bauru, SP, BrazilUniv Estadual Paulista, Dept Fis, BR-17033360 Bauru, SP, BrazilLNLS: SXS-10976SpringerFac Tecnol SENAI CICUniv Fed ParanaUNIOESTEUniversidade Estadual Paulista (Unesp)Siqueira, M. C.Machado, K. D.Serbena, J. P. M.Hummelgen, I. A.Stolf, S. F.Azevedo, C. G. G. de [UNESP]Silva, J. H. D. da [UNESP]2018-11-26T16:40:39Z2018-11-26T16:40:39Z2016-07-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article7379-7383application/pdfhttp://dx.doi.org/10.1007/s10854-016-4711-2Journal Of Materials Science-materials In Electronics. Dordrecht: Springer, v. 27, n. 7, p. 7379-7383, 2016.0957-4522http://hdl.handle.net/11449/16161010.1007/s10854-016-4711-2WOS:000377896400102WOS000377896400102.pdfWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal Of Materials Science-materials In Electronics0,503info:eu-repo/semantics/openAccess2024-04-25T17:39:51Zoai:repositorio.unesp.br:11449/161610Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:24:43.273248Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Electronic and optical properties of amorphous GaSe thin films
title Electronic and optical properties of amorphous GaSe thin films
spellingShingle Electronic and optical properties of amorphous GaSe thin films
Siqueira, M. C.
title_short Electronic and optical properties of amorphous GaSe thin films
title_full Electronic and optical properties of amorphous GaSe thin films
title_fullStr Electronic and optical properties of amorphous GaSe thin films
title_full_unstemmed Electronic and optical properties of amorphous GaSe thin films
title_sort Electronic and optical properties of amorphous GaSe thin films
author Siqueira, M. C.
author_facet Siqueira, M. C.
Machado, K. D.
Serbena, J. P. M.
Hummelgen, I. A.
Stolf, S. F.
Azevedo, C. G. G. de [UNESP]
Silva, J. H. D. da [UNESP]
author_role author
author2 Machado, K. D.
Serbena, J. P. M.
Hummelgen, I. A.
Stolf, S. F.
Azevedo, C. G. G. de [UNESP]
Silva, J. H. D. da [UNESP]
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Fac Tecnol SENAI CIC
Univ Fed Parana
UNIOESTE
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Siqueira, M. C.
Machado, K. D.
Serbena, J. P. M.
Hummelgen, I. A.
Stolf, S. F.
Azevedo, C. G. G. de [UNESP]
Silva, J. H. D. da [UNESP]
description The eletronic and optical properties of amorphous GaSe thin films produced by vacuum evaporation were investigated using X-ray photoemission spectroscopy (XPS) and transmittance spectroscopy techniques. XPS measurements allowed the determination of the valence band energy and showed the chemical bonding and the charge transfer between Se and Ga atoms. Transmittance measurements allowed the determination of the optical gap, refractive index and extinction coefficient in the low and high absorption regions. Using the Wemple and DiDomenico single oscillator model we also found the oscillator and the dispersive energies. From the valence band and optical gap energies, the conduction band was found and an energy level diagram for f-GaSe is proposed.
publishDate 2016
dc.date.none.fl_str_mv 2016-07-01
2018-11-26T16:40:39Z
2018-11-26T16:40:39Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/s10854-016-4711-2
Journal Of Materials Science-materials In Electronics. Dordrecht: Springer, v. 27, n. 7, p. 7379-7383, 2016.
0957-4522
http://hdl.handle.net/11449/161610
10.1007/s10854-016-4711-2
WOS:000377896400102
WOS000377896400102.pdf
url http://dx.doi.org/10.1007/s10854-016-4711-2
http://hdl.handle.net/11449/161610
identifier_str_mv Journal Of Materials Science-materials In Electronics. Dordrecht: Springer, v. 27, n. 7, p. 7379-7383, 2016.
0957-4522
10.1007/s10854-016-4711-2
WOS:000377896400102
WOS000377896400102.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal Of Materials Science-materials In Electronics
0,503
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 7379-7383
application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128806119014400

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