Structure and composition of amorphous Ge1-xSnx thin films

Detalhes bibliográficos
Autor(a) principal: Chambouleyron, I.
Data de Publicação: 1988
Outros Autores: Souza, Joel Pereira de, Baumvol, Israel Jacob Rabin, Marques, F.C.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95121
Resumo: The composition and bonding configuration of amorphous germanium-tin (a-Gel 1--xSnx ) thin films are reported (O≤x < 0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
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spelling Chambouleyron, I.Souza, Joel Pereira deBaumvol, Israel Jacob RabinMarques, F.C.2014-05-13T02:03:41Z19880021-8979http://hdl.handle.net/10183/95121000014877The composition and bonding configuration of amorphous germanium-tin (a-Gel 1--xSnx ) thin films are reported (O≤x < 0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.application/pdfengJournal of Applied Physics. Woodbury. Vol. 63, no. 11 (June, 1988), p. 5596-5598Efeito mossbauerSemicondutores amorfosFilmes finosImplantação de íonsStructure and composition of amorphous Ge1-xSnx thin filmsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000014877.pdf000014877.pdfTexto completo (inglês)application/pdf561146http://www.lume.ufrgs.br/bitstream/10183/95121/1/000014877.pdfb06519b1cda4f0df31dccad9232a0bd2MD51TEXT000014877.pdf.txt000014877.pdf.txtExtracted Texttext/plain17209http://www.lume.ufrgs.br/bitstream/10183/95121/2/000014877.pdf.txtcc29258490a526f7500ec57a7c595f39MD52THUMBNAIL000014877.pdf.jpg000014877.pdf.jpgGenerated Thumbnailimage/jpeg1527http://www.lume.ufrgs.br/bitstream/10183/95121/3/000014877.pdf.jpgbe198fd7d72e231413a4e3f9fb9070c4MD5310183/951212022-02-22 05:03:55.801343oai:www.lume.ufrgs.br:10183/95121Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:03:55Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Structure and composition of amorphous Ge1-xSnx thin films
title Structure and composition of amorphous Ge1-xSnx thin films
spellingShingle Structure and composition of amorphous Ge1-xSnx thin films
Chambouleyron, I.
Efeito mossbauer
Semicondutores amorfos
Filmes finos
Implantação de íons
title_short Structure and composition of amorphous Ge1-xSnx thin films
title_full Structure and composition of amorphous Ge1-xSnx thin films
title_fullStr Structure and composition of amorphous Ge1-xSnx thin films
title_full_unstemmed Structure and composition of amorphous Ge1-xSnx thin films
title_sort Structure and composition of amorphous Ge1-xSnx thin films
author Chambouleyron, I.
author_facet Chambouleyron, I.
Souza, Joel Pereira de
Baumvol, Israel Jacob Rabin
Marques, F.C.
author_role author
author2 Souza, Joel Pereira de
Baumvol, Israel Jacob Rabin
Marques, F.C.
author2_role author
author
author
dc.contributor.author.fl_str_mv Chambouleyron, I.
Souza, Joel Pereira de
Baumvol, Israel Jacob Rabin
Marques, F.C.
dc.subject.por.fl_str_mv Efeito mossbauer
Semicondutores amorfos
Filmes finos
Implantação de íons
topic Efeito mossbauer
Semicondutores amorfos
Filmes finos
Implantação de íons
description The composition and bonding configuration of amorphous germanium-tin (a-Gel 1--xSnx ) thin films are reported (O≤x < 0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
publishDate 1988
dc.date.issued.fl_str_mv 1988
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95121
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of Applied Physics. Woodbury. Vol. 63, no. 11 (June, 1988), p. 5596-5598
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