An alternative chemical route for synthesis of SrBi2Ta2O9 thin films

Detalhes bibliográficos
Autor(a) principal: Zanetti, S. M.
Data de Publicação: 2000
Outros Autores: Leite, E. R., Longo, E., Araújo, E. B., Chiquito, A. J., Eiras, J. A., Varela, J. A. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1557/JMR.2000.0301
http://hdl.handle.net/11449/231697
Resumo: SrBi2Ta2O9 was synthesized by the modified polymeric precursor method using precursor reagents such as carbonate, nitrate, or oxide. The films were deposited onto Pt/Ti/SiO2/Si(100) substrates by spin coating and crystallized at temperatures ranging from 700 to 800 °C in air. Microstructural and phase evaluation were followed by grazing incidence x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The films displayed rounded grain structures with a superficial roughness of approximately 10 nm. The dielectric constant values were 362 and 617 for films treated at 700 and 800 °C, respectively. The remanent polarization and coercive field were 12.3 μC/cm2 and 61 kV/cm and 18.48 μC/cm2 and 47 kV/cm for the film treated at 700 and 800 °C, respectively. This method generally allows for the use of readily available reagents such as oxides, carbonates, or nitrate as cation sources, with the added advantage that it requires no special apparatus or atmosphere control. © 2000 Materials Research Society.
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spelling An alternative chemical route for synthesis of SrBi2Ta2O9 thin filmsSrBi2Ta2O9 was synthesized by the modified polymeric precursor method using precursor reagents such as carbonate, nitrate, or oxide. The films were deposited onto Pt/Ti/SiO2/Si(100) substrates by spin coating and crystallized at temperatures ranging from 700 to 800 °C in air. Microstructural and phase evaluation were followed by grazing incidence x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The films displayed rounded grain structures with a superficial roughness of approximately 10 nm. The dielectric constant values were 362 and 617 for films treated at 700 and 800 °C, respectively. The remanent polarization and coercive field were 12.3 μC/cm2 and 61 kV/cm and 18.48 μC/cm2 and 47 kV/cm for the film treated at 700 and 800 °C, respectively. This method generally allows for the use of readily available reagents such as oxides, carbonates, or nitrate as cation sources, with the added advantage that it requires no special apparatus or atmosphere control. © 2000 Materials Research Society.Departamento de Quí;mica Universidade Federal de São Carlos, P.O. Box 676, 13560-905 São Carlos, SPDepartamento de Física Universidade Federal de São Carlos, P.O. Box 676, 13560-905 São Carlos, SPDepartamento de Química Universidade Estadual de São Paulo, P.O. Box 676, 14801-970 Araraquara, SPDepartamento de Química Universidade Estadual de São Paulo, P.O. Box 676, 14801-970 Araraquara, SPUniversidade Federal de São Carlos (UFSCar)Universidade Estadual Paulista (UNESP)Zanetti, S. M.Leite, E. R.Longo, E.Araújo, E. B.Chiquito, A. J.Eiras, J. A.Varela, J. A. [UNESP]2022-04-29T08:46:57Z2022-04-29T08:46:57Z2000-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article2091-2095http://dx.doi.org/10.1557/JMR.2000.0301Journal of Materials Research, v. 15, n. 10, p. 2091-2095, 2000.0884-2914http://hdl.handle.net/11449/23169710.1557/JMR.2000.03012-s2.0-0034308487Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Researchinfo:eu-repo/semantics/openAccess2022-04-29T08:46:57Zoai:repositorio.unesp.br:11449/231697Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462022-04-29T08:46:57Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
title An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
spellingShingle An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
Zanetti, S. M.
title_short An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
title_full An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
title_fullStr An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
title_full_unstemmed An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
title_sort An alternative chemical route for synthesis of SrBi2Ta2O9 thin films
author Zanetti, S. M.
author_facet Zanetti, S. M.
Leite, E. R.
Longo, E.
Araújo, E. B.
Chiquito, A. J.
Eiras, J. A.
Varela, J. A. [UNESP]
author_role author
author2 Leite, E. R.
Longo, E.
Araújo, E. B.
Chiquito, A. J.
Eiras, J. A.
Varela, J. A. [UNESP]
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Federal de São Carlos (UFSCar)
Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv Zanetti, S. M.
Leite, E. R.
Longo, E.
Araújo, E. B.
Chiquito, A. J.
Eiras, J. A.
Varela, J. A. [UNESP]
description SrBi2Ta2O9 was synthesized by the modified polymeric precursor method using precursor reagents such as carbonate, nitrate, or oxide. The films were deposited onto Pt/Ti/SiO2/Si(100) substrates by spin coating and crystallized at temperatures ranging from 700 to 800 °C in air. Microstructural and phase evaluation were followed by grazing incidence x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The films displayed rounded grain structures with a superficial roughness of approximately 10 nm. The dielectric constant values were 362 and 617 for films treated at 700 and 800 °C, respectively. The remanent polarization and coercive field were 12.3 μC/cm2 and 61 kV/cm and 18.48 μC/cm2 and 47 kV/cm for the film treated at 700 and 800 °C, respectively. This method generally allows for the use of readily available reagents such as oxides, carbonates, or nitrate as cation sources, with the added advantage that it requires no special apparatus or atmosphere control. © 2000 Materials Research Society.
publishDate 2000
dc.date.none.fl_str_mv 2000-01-01
2022-04-29T08:46:57Z
2022-04-29T08:46:57Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1557/JMR.2000.0301
Journal of Materials Research, v. 15, n. 10, p. 2091-2095, 2000.
0884-2914
http://hdl.handle.net/11449/231697
10.1557/JMR.2000.0301
2-s2.0-0034308487
url http://dx.doi.org/10.1557/JMR.2000.0301
http://hdl.handle.net/11449/231697
identifier_str_mv Journal of Materials Research, v. 15, n. 10, p. 2091-2095, 2000.
0884-2914
10.1557/JMR.2000.0301
2-s2.0-0034308487
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Materials Research
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 2091-2095
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
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