Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films

Detalhes bibliográficos
Autor(a) principal: Pontes, F. M. [UNESP]
Data de Publicação: 2018
Outros Autores: Pontes, D. S.L. [UNESP], Chiquito, A. J., Colmenares, Y. N., Mastelaro, V. R., Longo, E. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/j.mseb.2018.11.013
http://hdl.handle.net/11449/189928
Resumo: This work investigates the impact of Fe 3+ and La 3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe 3+ and La 3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current–voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample's impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.
id UNSP_31d0d20f3d20026cff02444bed3bd86e
oai_identifier_str oai:repositorio.unesp.br:11449/189928
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin filmsDielectric relaxationElectrical transportImpedance spectroscopyThin filmsThis work investigates the impact of Fe 3+ and La 3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe 3+ and La 3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current–voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample's impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Department of Chemistry Universidade Estadual Paulista – Unesp, P.O. Box 473NanO LaB – Department of Physics Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676Physics Institute of São Carlos (IFSC) Universidade de São PauloLIEC – CDMF – Department of Chemistry Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676Department of Chemistry Universidade Estadual Paulista – Unesp, P.O. Box 473Universidade Estadual Paulista (Unesp)Universidade Federal de São Carlos (UFSCar)Universidade de São Paulo (USP)Pontes, F. M. [UNESP]Pontes, D. S.L. [UNESP]Chiquito, A. J.Colmenares, Y. N.Mastelaro, V. R.Longo, E. [UNESP]2019-10-06T16:56:47Z2019-10-06T16:56:47Z2018-10-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article179-188http://dx.doi.org/10.1016/j.mseb.2018.11.013Materials Science and Engineering B: Solid-State Materials for Advanced Technology, v. 236-237, p. 179-188.0921-5107http://hdl.handle.net/11449/18992810.1016/j.mseb.2018.11.0132-s2.0-85057418221Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Science and Engineering B: Solid-State Materials for Advanced Technologyinfo:eu-repo/semantics/openAccess2021-10-23T01:35:28Zoai:repositorio.unesp.br:11449/189928Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T01:35:28Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
title Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
spellingShingle Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
Pontes, F. M. [UNESP]
Dielectric relaxation
Electrical transport
Impedance spectroscopy
Thin films
title_short Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
title_full Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
title_fullStr Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
title_full_unstemmed Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
title_sort Electrical transport properties and complex impedance investigation of Fe 3+ and La 3+ co-doping (Pb,Sr)TiO 3 thin films
author Pontes, F. M. [UNESP]
author_facet Pontes, F. M. [UNESP]
Pontes, D. S.L. [UNESP]
Chiquito, A. J.
Colmenares, Y. N.
Mastelaro, V. R.
Longo, E. [UNESP]
author_role author
author2 Pontes, D. S.L. [UNESP]
Chiquito, A. J.
Colmenares, Y. N.
Mastelaro, V. R.
Longo, E. [UNESP]
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Universidade Federal de São Carlos (UFSCar)
Universidade de São Paulo (USP)
dc.contributor.author.fl_str_mv Pontes, F. M. [UNESP]
Pontes, D. S.L. [UNESP]
Chiquito, A. J.
Colmenares, Y. N.
Mastelaro, V. R.
Longo, E. [UNESP]
dc.subject.por.fl_str_mv Dielectric relaxation
Electrical transport
Impedance spectroscopy
Thin films
topic Dielectric relaxation
Electrical transport
Impedance spectroscopy
Thin films
description This work investigates the impact of Fe 3+ and La 3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe 3+ and La 3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current–voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample's impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.
publishDate 2018
dc.date.none.fl_str_mv 2018-10-01
2019-10-06T16:56:47Z
2019-10-06T16:56:47Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.mseb.2018.11.013
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, v. 236-237, p. 179-188.
0921-5107
http://hdl.handle.net/11449/189928
10.1016/j.mseb.2018.11.013
2-s2.0-85057418221
url http://dx.doi.org/10.1016/j.mseb.2018.11.013
http://hdl.handle.net/11449/189928
identifier_str_mv Materials Science and Engineering B: Solid-State Materials for Advanced Technology, v. 236-237, p. 179-188.
0921-5107
10.1016/j.mseb.2018.11.013
2-s2.0-85057418221
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Materials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 179-188
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1797789569330970624

Registros relacionados