Processing of BiFeO3 thin films to control their dielectric response

Detalhes bibliográficos
Autor(a) principal: Reis, S. P. [UNESP]
Data de Publicação: 2020
Outros Autores: Freitas, F. E. [UNESP], Araujo, E. B. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
DOI: 10.1080/00150193.2020.1722884
Texto Completo: http://dx.doi.org/10.1080/00150193.2020.1722884
http://hdl.handle.net/11449/196929
Resumo: BiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared with Fe and Bi excesses and post-annealed in oxygen atmosphere showed higher electrical conductivity and lower conduction activation energies than single phase ones. Distinct parameters indicated different conduction mechanisms in the films, associated with the first ionization of oxygen vacancies in BFO films with Fe and Bi excesses and the second one in single phase films. Higher conductive films show lower relaxation times compared to single phase ones.
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spelling Processing of BiFeO3 thin films to control their dielectric responseConductivitydielectric relaxationbismuth ferritethin filmsBiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared with Fe and Bi excesses and post-annealed in oxygen atmosphere showed higher electrical conductivity and lower conduction activation energies than single phase ones. Distinct parameters indicated different conduction mechanisms in the films, associated with the first ionization of oxygen vacancies in BFO films with Fe and Bi excesses and the second one in single phase films. Higher conductive films show lower relaxation times compared to single phase ones.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Sao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, BrazilFed Inst Educ Sci & Technol Sao Paulo, Votuporanga, BrazilUniv Rio Verde UniRV, Rio Verde, BrazilSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, BrazilFAPESP: 2017/13769-1CNPq: 304604/2015-1CAPES: 88887.310512/2018-00Taylor & Francis LtdUniversidade Estadual Paulista (Unesp)Fed Inst Educ Sci & Technol Sao PauloUniv Rio Verde UniRVReis, S. P. [UNESP]Freitas, F. E. [UNESP]Araujo, E. B. [UNESP]2020-12-10T20:00:45Z2020-12-10T20:00:45Z2020-05-18info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article61-69http://dx.doi.org/10.1080/00150193.2020.1722884Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 560, n. 1, p. 61-69, 2020.0015-0193http://hdl.handle.net/11449/19692910.1080/00150193.2020.1722884WOS:000536970900010Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengFerroelectricsinfo:eu-repo/semantics/openAccess2024-07-10T14:07:49Zoai:repositorio.unesp.br:11449/196929Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T20:33:26.119108Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Processing of BiFeO3 thin films to control their dielectric response
title Processing of BiFeO3 thin films to control their dielectric response
spellingShingle Processing of BiFeO3 thin films to control their dielectric response
Processing of BiFeO3 thin films to control their dielectric response
Reis, S. P. [UNESP]
Conductivity
dielectric relaxation
bismuth ferrite
thin films
Reis, S. P. [UNESP]
Conductivity
dielectric relaxation
bismuth ferrite
thin films
title_short Processing of BiFeO3 thin films to control their dielectric response
title_full Processing of BiFeO3 thin films to control their dielectric response
title_fullStr Processing of BiFeO3 thin films to control their dielectric response
Processing of BiFeO3 thin films to control their dielectric response
title_full_unstemmed Processing of BiFeO3 thin films to control their dielectric response
Processing of BiFeO3 thin films to control their dielectric response
title_sort Processing of BiFeO3 thin films to control their dielectric response
author Reis, S. P. [UNESP]
author_facet Reis, S. P. [UNESP]
Reis, S. P. [UNESP]
Freitas, F. E. [UNESP]
Araujo, E. B. [UNESP]
Freitas, F. E. [UNESP]
Araujo, E. B. [UNESP]
author_role author
author2 Freitas, F. E. [UNESP]
Araujo, E. B. [UNESP]
author2_role author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Fed Inst Educ Sci & Technol Sao Paulo
Univ Rio Verde UniRV
dc.contributor.author.fl_str_mv Reis, S. P. [UNESP]
Freitas, F. E. [UNESP]
Araujo, E. B. [UNESP]
dc.subject.por.fl_str_mv Conductivity
dielectric relaxation
bismuth ferrite
thin films
topic Conductivity
dielectric relaxation
bismuth ferrite
thin films
description BiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared with Fe and Bi excesses and post-annealed in oxygen atmosphere showed higher electrical conductivity and lower conduction activation energies than single phase ones. Distinct parameters indicated different conduction mechanisms in the films, associated with the first ionization of oxygen vacancies in BFO films with Fe and Bi excesses and the second one in single phase films. Higher conductive films show lower relaxation times compared to single phase ones.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-10T20:00:45Z
2020-12-10T20:00:45Z
2020-05-18
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1080/00150193.2020.1722884
Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 560, n. 1, p. 61-69, 2020.
0015-0193
http://hdl.handle.net/11449/196929
10.1080/00150193.2020.1722884
WOS:000536970900010
url http://dx.doi.org/10.1080/00150193.2020.1722884
http://hdl.handle.net/11449/196929
identifier_str_mv Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 560, n. 1, p. 61-69, 2020.
0015-0193
10.1080/00150193.2020.1722884
WOS:000536970900010
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Ferroelectrics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 61-69
dc.publisher.none.fl_str_mv Taylor & Francis Ltd
publisher.none.fl_str_mv Taylor & Francis Ltd
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1822182251769626624
dc.identifier.doi.none.fl_str_mv 10.1080/00150193.2020.1722884

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