Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology

Detalhes bibliográficos
Autor(a) principal: Martins, E. [UNESP]
Data de Publicação: 1999
Outros Autores: Gomes, M. V. G., Bastida, E. M., Swart, J. W.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/IMOC.1999.867106
http://hdl.handle.net/11449/35835
Resumo: The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.
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spelling Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technologyGilbert Cell MixersLNAsFront-end receiversPHEMTsThe design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.UNESP, FEG, São Paulo, BrazilUNESP, FEG, São Paulo, BrazilIEEEUniversidade Estadual Paulista (Unesp)Martins, E. [UNESP]Gomes, M. V. G.Bastida, E. M.Swart, J. W.2014-05-20T15:25:24Z2014-05-20T15:25:24Z1999-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject267-270http://dx.doi.org/10.1109/IMOC.1999.8671061999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2. New York: IEEE, p. 267-270, 1999.http://hdl.handle.net/11449/3583510.1109/IMOC.1999.867106WOS:000089938100061Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng1999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2info:eu-repo/semantics/openAccess2021-10-23T21:41:33Zoai:repositorio.unesp.br:11449/35835Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:21:03.470496Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
title Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
spellingShingle Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
Martins, E. [UNESP]
Gilbert Cell Mixers
LNAs
Front-end receivers
PHEMTs
title_short Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
title_full Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
title_fullStr Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
title_full_unstemmed Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
title_sort Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology
author Martins, E. [UNESP]
author_facet Martins, E. [UNESP]
Gomes, M. V. G.
Bastida, E. M.
Swart, J. W.
author_role author
author2 Gomes, M. V. G.
Bastida, E. M.
Swart, J. W.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Martins, E. [UNESP]
Gomes, M. V. G.
Bastida, E. M.
Swart, J. W.
dc.subject.por.fl_str_mv Gilbert Cell Mixers
LNAs
Front-end receivers
PHEMTs
topic Gilbert Cell Mixers
LNAs
Front-end receivers
PHEMTs
description The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.
publishDate 1999
dc.date.none.fl_str_mv 1999-01-01
2014-05-20T15:25:24Z
2014-05-20T15:25:24Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/IMOC.1999.867106
1999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2. New York: IEEE, p. 267-270, 1999.
http://hdl.handle.net/11449/35835
10.1109/IMOC.1999.867106
WOS:000089938100061
url http://dx.doi.org/10.1109/IMOC.1999.867106
http://hdl.handle.net/11449/35835
identifier_str_mv 1999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2. New York: IEEE, p. 267-270, 1999.
10.1109/IMOC.1999.867106
WOS:000089938100061
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 1999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 267-270
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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