Two dimensional computer simulation of plasma immersion ion implantation
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1590/S0103-97332004000800033 http://hdl.handle.net/11449/67991 |
Resumo: | The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating objects with irregular geometry without complex manipulation of the target holder. The effectiveness of this approach relies on the uniformity of the incident ion dose. Unfortunately, perfect dose uniformity is usually difficult to achieve when treating samples of complex shape. The problems arise from the non-uniform plasma density and expansion of plasma sheath. A particle-in-cell computer simulation is used to study the time-dependent evolution of the plasma sheath surrounding two-dimensional objects during process of plasma immersion ion implantation. Before starting the implantation phase, steady-state nitrogen plasma is established inside the simulation volume by using ionization of gas precursor with primary electrons. The plasma self-consistently evolves to a non-uniform density distribution, which is used as initial density distribution for the implantation phase. As a result, we can obtain a more realistic description of the plasma sheath expansion and dynamics. Ion current density on the target, average impact energy, and trajectories of the implanted ions were calculated for three geometrical shapes. Large deviations from the uniform dose distribution have been observed for targets with irregular shapes. In addition, effect of secondary electron emission has been included in our simulation and no qualitative modifications to the sheath dynamics have been noticed. However, the energetic secondary electrons change drastically the plasma net balance and also pose significant X-ray hazard. Finally, an axial magnetic field has been added to the calculations and the possibility for magnetic insulation of secondary electrons has been proven. |
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Two dimensional computer simulation of plasma immersion ion implantationThe biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating objects with irregular geometry without complex manipulation of the target holder. The effectiveness of this approach relies on the uniformity of the incident ion dose. Unfortunately, perfect dose uniformity is usually difficult to achieve when treating samples of complex shape. The problems arise from the non-uniform plasma density and expansion of plasma sheath. A particle-in-cell computer simulation is used to study the time-dependent evolution of the plasma sheath surrounding two-dimensional objects during process of plasma immersion ion implantation. Before starting the implantation phase, steady-state nitrogen plasma is established inside the simulation volume by using ionization of gas precursor with primary electrons. The plasma self-consistently evolves to a non-uniform density distribution, which is used as initial density distribution for the implantation phase. As a result, we can obtain a more realistic description of the plasma sheath expansion and dynamics. Ion current density on the target, average impact energy, and trajectories of the implanted ions were calculated for three geometrical shapes. Large deviations from the uniform dose distribution have been observed for targets with irregular shapes. In addition, effect of secondary electron emission has been included in our simulation and no qualitative modifications to the sheath dynamics have been noticed. However, the energetic secondary electrons change drastically the plasma net balance and also pose significant X-ray hazard. Finally, an axial magnetic field has been added to the calculations and the possibility for magnetic insulation of secondary electrons has been proven.Assoc. Laboratory of Plasma - LAP Natl. Inst. for Space Res. - INPE, Av. dos Astronautas 1758, Sao Jose dos Campos, SPDepartment of Physics and Chemistry Eng. Fac. of Guaratingueta FEG UNESP, Av. Ariberto Perreira da Cunha 333, Guaratinguetá, SPDepartment of Physics and Chemistry Eng. Fac. of Guaratingueta FEG UNESP, Av. Ariberto Perreira da Cunha 333, Guaratinguetá, SPInstituto Nacional de Pesquisas Espaciais (INPE)Universidade Estadual Paulista (Unesp)Kostov, K. G. [UNESP]Barroso, J. J.Ueda, M.2014-05-27T11:21:12Z2014-05-27T11:21:12Z2004-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject1689-1695application/pdfhttp://dx.doi.org/10.1590/S0103-97332004000800033Brazilian Journal of Physics, v. 34, n. 4 B, p. 1689-1695, 2004.0103-9733http://hdl.handle.net/11449/6799110.1590/S0103-97332004000800033S0103-97332004000800033WOS:0002262095000332-s2.0-128442820242-s2.0-12844282024.pdf1946509801000450Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengBrazilian Journal of Physics1.0820,276info:eu-repo/semantics/openAccess2023-11-15T06:15:13Zoai:repositorio.unesp.br:11449/67991Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-11-15T06:15:13Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Two dimensional computer simulation of plasma immersion ion implantation |
title |
Two dimensional computer simulation of plasma immersion ion implantation |
spellingShingle |
Two dimensional computer simulation of plasma immersion ion implantation Kostov, K. G. [UNESP] |
title_short |
Two dimensional computer simulation of plasma immersion ion implantation |
title_full |
Two dimensional computer simulation of plasma immersion ion implantation |
title_fullStr |
Two dimensional computer simulation of plasma immersion ion implantation |
title_full_unstemmed |
Two dimensional computer simulation of plasma immersion ion implantation |
title_sort |
Two dimensional computer simulation of plasma immersion ion implantation |
author |
Kostov, K. G. [UNESP] |
author_facet |
Kostov, K. G. [UNESP] Barroso, J. J. Ueda, M. |
author_role |
author |
author2 |
Barroso, J. J. Ueda, M. |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Instituto Nacional de Pesquisas Espaciais (INPE) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Kostov, K. G. [UNESP] Barroso, J. J. Ueda, M. |
description |
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating objects with irregular geometry without complex manipulation of the target holder. The effectiveness of this approach relies on the uniformity of the incident ion dose. Unfortunately, perfect dose uniformity is usually difficult to achieve when treating samples of complex shape. The problems arise from the non-uniform plasma density and expansion of plasma sheath. A particle-in-cell computer simulation is used to study the time-dependent evolution of the plasma sheath surrounding two-dimensional objects during process of plasma immersion ion implantation. Before starting the implantation phase, steady-state nitrogen plasma is established inside the simulation volume by using ionization of gas precursor with primary electrons. The plasma self-consistently evolves to a non-uniform density distribution, which is used as initial density distribution for the implantation phase. As a result, we can obtain a more realistic description of the plasma sheath expansion and dynamics. Ion current density on the target, average impact energy, and trajectories of the implanted ions were calculated for three geometrical shapes. Large deviations from the uniform dose distribution have been observed for targets with irregular shapes. In addition, effect of secondary electron emission has been included in our simulation and no qualitative modifications to the sheath dynamics have been noticed. However, the energetic secondary electrons change drastically the plasma net balance and also pose significant X-ray hazard. Finally, an axial magnetic field has been added to the calculations and the possibility for magnetic insulation of secondary electrons has been proven. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-12-01 2014-05-27T11:21:12Z 2014-05-27T11:21:12Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1590/S0103-97332004000800033 Brazilian Journal of Physics, v. 34, n. 4 B, p. 1689-1695, 2004. 0103-9733 http://hdl.handle.net/11449/67991 10.1590/S0103-97332004000800033 S0103-97332004000800033 WOS:000226209500033 2-s2.0-12844282024 2-s2.0-12844282024.pdf 1946509801000450 |
url |
http://dx.doi.org/10.1590/S0103-97332004000800033 http://hdl.handle.net/11449/67991 |
identifier_str_mv |
Brazilian Journal of Physics, v. 34, n. 4 B, p. 1689-1695, 2004. 0103-9733 10.1590/S0103-97332004000800033 S0103-97332004000800033 WOS:000226209500033 2-s2.0-12844282024 2-s2.0-12844282024.pdf 1946509801000450 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Brazilian Journal of Physics 1.082 0,276 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1689-1695 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1799964946047434752 |