Optical free-carrier generation in silicon nano-waveguides at 1550 nm

Detalhes bibliográficos
Autor(a) principal: Gil-Molina, Andres
Data de Publicação: 2018
Outros Autores: Aldaya, Ivan [UNESP], Pita, Julián L., Gabrielli, Lucas H., Fragnito, Hugo L., Dainese, Paulo
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1063/1.5023589
http://hdl.handle.net/11449/171123
Resumo: We report on time-resolved pump and probe characterization of linear and nonlinear optical generation of free carriers in a silicon strip nano-waveguide at the 1550 nm communication band. Analytical expressions were developed to extract the carrier density averaged along the waveguide length from the measured free-carrier absorption for different input pump power levels. This allows us to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining TPA and SPA coefficients of (1.5 ± 0.1) cm/GW and (1.9 ± 0.1) m-1, respectively. Our results reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon. In addition, we find that for the waveguide under test, the carrier generation via SPA plays an important role up to ∼300 mW, and therefore, it must be taken into account to correctly assess free-carrier effects in silicon photonic devices.
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spelling Optical free-carrier generation in silicon nano-waveguides at 1550 nmWe report on time-resolved pump and probe characterization of linear and nonlinear optical generation of free carriers in a silicon strip nano-waveguide at the 1550 nm communication band. Analytical expressions were developed to extract the carrier density averaged along the waveguide length from the measured free-carrier absorption for different input pump power levels. This allows us to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining TPA and SPA coefficients of (1.5 ± 0.1) cm/GW and (1.9 ± 0.1) m-1, respectively. Our results reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon. In addition, we find that for the waveguide under test, the carrier generation via SPA plays an important role up to ∼300 mW, and therefore, it must be taken into account to correctly assess free-carrier effects in silicon photonic devices.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Gleb Wataghin Physics Institute University of CampinasSchool of Electrical and Computer Engineering University of CampinasCampus São João da Boa Vista State University of São Paulo (UNESP)MackGraphe Mackenzie Presbyterian UniversityCampus São João da Boa Vista State University of São Paulo (UNESP)FAPESP: 2008/57857FAPESP: 2012/50259-8FAPESP: 2013/20180-3FAPESP: 2015/04113-0CNPq: 574017/2008-9Universidade Estadual de Campinas (UNICAMP)Universidade Estadual Paulista (Unesp)Mackenzie Presbyterian UniversityGil-Molina, AndresAldaya, Ivan [UNESP]Pita, Julián L.Gabrielli, Lucas H.Fragnito, Hugo L.Dainese, Paulo2018-12-11T16:54:01Z2018-12-11T16:54:01Z2018-06-18info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://dx.doi.org/10.1063/1.5023589Applied Physics Letters, v. 112, n. 25, 2018.0003-6951http://hdl.handle.net/11449/17112310.1063/1.50235892-s2.0-850488077422-s2.0-85048807742.pdf2-s2.0-85048807742.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengApplied Physics Letters1,382info:eu-repo/semantics/openAccess2023-11-24T06:16:39Zoai:repositorio.unesp.br:11449/171123Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:37:31.988522Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Optical free-carrier generation in silicon nano-waveguides at 1550 nm
title Optical free-carrier generation in silicon nano-waveguides at 1550 nm
spellingShingle Optical free-carrier generation in silicon nano-waveguides at 1550 nm
Gil-Molina, Andres
title_short Optical free-carrier generation in silicon nano-waveguides at 1550 nm
title_full Optical free-carrier generation in silicon nano-waveguides at 1550 nm
title_fullStr Optical free-carrier generation in silicon nano-waveguides at 1550 nm
title_full_unstemmed Optical free-carrier generation in silicon nano-waveguides at 1550 nm
title_sort Optical free-carrier generation in silicon nano-waveguides at 1550 nm
author Gil-Molina, Andres
author_facet Gil-Molina, Andres
Aldaya, Ivan [UNESP]
Pita, Julián L.
Gabrielli, Lucas H.
Fragnito, Hugo L.
Dainese, Paulo
author_role author
author2 Aldaya, Ivan [UNESP]
Pita, Julián L.
Gabrielli, Lucas H.
Fragnito, Hugo L.
Dainese, Paulo
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual de Campinas (UNICAMP)
Universidade Estadual Paulista (Unesp)
Mackenzie Presbyterian University
dc.contributor.author.fl_str_mv Gil-Molina, Andres
Aldaya, Ivan [UNESP]
Pita, Julián L.
Gabrielli, Lucas H.
Fragnito, Hugo L.
Dainese, Paulo
description We report on time-resolved pump and probe characterization of linear and nonlinear optical generation of free carriers in a silicon strip nano-waveguide at the 1550 nm communication band. Analytical expressions were developed to extract the carrier density averaged along the waveguide length from the measured free-carrier absorption for different input pump power levels. This allows us to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining TPA and SPA coefficients of (1.5 ± 0.1) cm/GW and (1.9 ± 0.1) m-1, respectively. Our results reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon. In addition, we find that for the waveguide under test, the carrier generation via SPA plays an important role up to ∼300 mW, and therefore, it must be taken into account to correctly assess free-carrier effects in silicon photonic devices.
publishDate 2018
dc.date.none.fl_str_mv 2018-12-11T16:54:01Z
2018-12-11T16:54:01Z
2018-06-18
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1063/1.5023589
Applied Physics Letters, v. 112, n. 25, 2018.
0003-6951
http://hdl.handle.net/11449/171123
10.1063/1.5023589
2-s2.0-85048807742
2-s2.0-85048807742.pdf
2-s2.0-85048807742.pdf
url http://dx.doi.org/10.1063/1.5023589
http://hdl.handle.net/11449/171123
identifier_str_mv Applied Physics Letters, v. 112, n. 25, 2018.
0003-6951
10.1063/1.5023589
2-s2.0-85048807742
2-s2.0-85048807742.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Applied Physics Letters
1,382
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128956700819456

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