Optical free-carrier generation in silicon nano-waveguides at 1550 nm
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1063/1.5023589 http://hdl.handle.net/11449/171123 |
Resumo: | We report on time-resolved pump and probe characterization of linear and nonlinear optical generation of free carriers in a silicon strip nano-waveguide at the 1550 nm communication band. Analytical expressions were developed to extract the carrier density averaged along the waveguide length from the measured free-carrier absorption for different input pump power levels. This allows us to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining TPA and SPA coefficients of (1.5 ± 0.1) cm/GW and (1.9 ± 0.1) m-1, respectively. Our results reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon. In addition, we find that for the waveguide under test, the carrier generation via SPA plays an important role up to ∼300 mW, and therefore, it must be taken into account to correctly assess free-carrier effects in silicon photonic devices. |
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Repositório Institucional da UNESP |
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Optical free-carrier generation in silicon nano-waveguides at 1550 nmWe report on time-resolved pump and probe characterization of linear and nonlinear optical generation of free carriers in a silicon strip nano-waveguide at the 1550 nm communication band. Analytical expressions were developed to extract the carrier density averaged along the waveguide length from the measured free-carrier absorption for different input pump power levels. This allows us to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining TPA and SPA coefficients of (1.5 ± 0.1) cm/GW and (1.9 ± 0.1) m-1, respectively. Our results reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon. In addition, we find that for the waveguide under test, the carrier generation via SPA plays an important role up to ∼300 mW, and therefore, it must be taken into account to correctly assess free-carrier effects in silicon photonic devices.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Gleb Wataghin Physics Institute University of CampinasSchool of Electrical and Computer Engineering University of CampinasCampus São João da Boa Vista State University of São Paulo (UNESP)MackGraphe Mackenzie Presbyterian UniversityCampus São João da Boa Vista State University of São Paulo (UNESP)FAPESP: 2008/57857FAPESP: 2012/50259-8FAPESP: 2013/20180-3FAPESP: 2015/04113-0CNPq: 574017/2008-9Universidade Estadual de Campinas (UNICAMP)Universidade Estadual Paulista (Unesp)Mackenzie Presbyterian UniversityGil-Molina, AndresAldaya, Ivan [UNESP]Pita, Julián L.Gabrielli, Lucas H.Fragnito, Hugo L.Dainese, Paulo2018-12-11T16:54:01Z2018-12-11T16:54:01Z2018-06-18info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://dx.doi.org/10.1063/1.5023589Applied Physics Letters, v. 112, n. 25, 2018.0003-6951http://hdl.handle.net/11449/17112310.1063/1.50235892-s2.0-850488077422-s2.0-85048807742.pdf2-s2.0-85048807742.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengApplied Physics Letters1,382info:eu-repo/semantics/openAccess2023-11-24T06:16:39Zoai:repositorio.unesp.br:11449/171123Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:37:31.988522Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm |
title |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm |
spellingShingle |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm Gil-Molina, Andres |
title_short |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm |
title_full |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm |
title_fullStr |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm |
title_full_unstemmed |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm |
title_sort |
Optical free-carrier generation in silicon nano-waveguides at 1550 nm |
author |
Gil-Molina, Andres |
author_facet |
Gil-Molina, Andres Aldaya, Ivan [UNESP] Pita, Julián L. Gabrielli, Lucas H. Fragnito, Hugo L. Dainese, Paulo |
author_role |
author |
author2 |
Aldaya, Ivan [UNESP] Pita, Julián L. Gabrielli, Lucas H. Fragnito, Hugo L. Dainese, Paulo |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual de Campinas (UNICAMP) Universidade Estadual Paulista (Unesp) Mackenzie Presbyterian University |
dc.contributor.author.fl_str_mv |
Gil-Molina, Andres Aldaya, Ivan [UNESP] Pita, Julián L. Gabrielli, Lucas H. Fragnito, Hugo L. Dainese, Paulo |
description |
We report on time-resolved pump and probe characterization of linear and nonlinear optical generation of free carriers in a silicon strip nano-waveguide at the 1550 nm communication band. Analytical expressions were developed to extract the carrier density averaged along the waveguide length from the measured free-carrier absorption for different input pump power levels. This allows us to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining TPA and SPA coefficients of (1.5 ± 0.1) cm/GW and (1.9 ± 0.1) m-1, respectively. Our results reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon. In addition, we find that for the waveguide under test, the carrier generation via SPA plays an important role up to ∼300 mW, and therefore, it must be taken into account to correctly assess free-carrier effects in silicon photonic devices. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-12-11T16:54:01Z 2018-12-11T16:54:01Z 2018-06-18 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1063/1.5023589 Applied Physics Letters, v. 112, n. 25, 2018. 0003-6951 http://hdl.handle.net/11449/171123 10.1063/1.5023589 2-s2.0-85048807742 2-s2.0-85048807742.pdf 2-s2.0-85048807742.pdf |
url |
http://dx.doi.org/10.1063/1.5023589 http://hdl.handle.net/11449/171123 |
identifier_str_mv |
Applied Physics Letters, v. 112, n. 25, 2018. 0003-6951 10.1063/1.5023589 2-s2.0-85048807742 2-s2.0-85048807742.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Applied Physics Letters 1,382 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128956700819456 |