Floating Body Effect on n-Channel Bulk FinFETs for Memory Application
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/184799 |
Resumo: | In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor. |
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Repositório Institucional da UNESP |
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Floating Body Effect on n-Channel Bulk FinFETs for Memory Applicationcomponentback biasfloating body effectBulkFinFETmemoryIn this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor.UNESP Univ Estadual Paulista, Automat & Integrated Syst, Campus Sorocaba, Gasi, Sorocaba, BrazilUniv Sao Paulo, LSI PSI USP, Sao Paulo, BrazilIMEC, Leuven, BelgiumKatholieke Univ Leuven, EE Dept, Leuven, BelgiumUNESP Univ Estadual Paulista, Automat & Integrated Syst, Campus Sorocaba, Gasi, Sorocaba, BrazilIeeeUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)IMECKatholieke Univ LeuvenAndrade, M. G. C. [UNESP]Almeida, L. M.Martino, J. A.Aoulaiche, M.Simoen, E.Claeys, C.Garcia, L2019-10-04T12:30:11Z2019-10-04T12:30:11Z2014-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject52014 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, 5 p., 2014.http://hdl.handle.net/11449/184799WOS:000380438300002Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2014 International Caribbean Conference On Devices, Circuits And Systems (iccdcs)info:eu-repo/semantics/openAccess2021-10-23T09:20:13Zoai:repositorio.unesp.br:11449/184799Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:29:18.138907Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application |
title |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application |
spellingShingle |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application Andrade, M. G. C. [UNESP] component back bias floating body effect Bulk FinFET memory |
title_short |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application |
title_full |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application |
title_fullStr |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application |
title_full_unstemmed |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application |
title_sort |
Floating Body Effect on n-Channel Bulk FinFETs for Memory Application |
author |
Andrade, M. G. C. [UNESP] |
author_facet |
Andrade, M. G. C. [UNESP] Almeida, L. M. Martino, J. A. Aoulaiche, M. Simoen, E. Claeys, C. Garcia, L |
author_role |
author |
author2 |
Almeida, L. M. Martino, J. A. Aoulaiche, M. Simoen, E. Claeys, C. Garcia, L |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade de São Paulo (USP) IMEC Katholieke Univ Leuven |
dc.contributor.author.fl_str_mv |
Andrade, M. G. C. [UNESP] Almeida, L. M. Martino, J. A. Aoulaiche, M. Simoen, E. Claeys, C. Garcia, L |
dc.subject.por.fl_str_mv |
component back bias floating body effect Bulk FinFET memory |
topic |
component back bias floating body effect Bulk FinFET memory |
description |
In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-01-01 2019-10-04T12:30:11Z 2019-10-04T12:30:11Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2014 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, 5 p., 2014. http://hdl.handle.net/11449/184799 WOS:000380438300002 |
identifier_str_mv |
2014 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, 5 p., 2014. WOS:000380438300002 |
url |
http://hdl.handle.net/11449/184799 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2014 International Caribbean Conference On Devices, Circuits And Systems (iccdcs) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
5 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129076632748032 |