Floating body effect on n-channel bulk FinFETs for memory application

Detalhes bibliográficos
Autor(a) principal: Andrade, M. G.C. [UNESP]
Data de Publicação: 2014
Outros Autores: Almeida, L. M. [UNESP], Martino, J. A. [UNESP], Aoulaiche, M., Simoen, E., Claeys, C.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/ICCDCS.2014.7016147
http://hdl.handle.net/11449/173495
Resumo: In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor.
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spelling Floating body effect on n-channel bulk FinFETs for memory applicationback biasBulkFinFETfloating body effectMemoryIn this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor.Campus de Sorocaba UNESP-Univ Estadual Paulista Automation and Integrated SystemsLSI University of Sao PauloImecE. E. Department KU LeuvenCampus de Sorocaba UNESP-Univ Estadual Paulista Automation and Integrated SystemsUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)ImecE. E. Department KU LeuvenAndrade, M. G.C. [UNESP]Almeida, L. M. [UNESP]Martino, J. A. [UNESP]Aoulaiche, M.Simoen, E.Claeys, C.2018-12-11T17:05:53Z2018-12-11T17:05:53Z2014-01-20info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/ICCDCS.2014.70161472014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings.http://hdl.handle.net/11449/17349510.1109/ICCDCS.2014.70161472-s2.0-84988299629Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedingsinfo:eu-repo/semantics/openAccess2021-10-23T21:47:02Zoai:repositorio.unesp.br:11449/173495Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T21:47:02Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Floating body effect on n-channel bulk FinFETs for memory application
title Floating body effect on n-channel bulk FinFETs for memory application
spellingShingle Floating body effect on n-channel bulk FinFETs for memory application
Andrade, M. G.C. [UNESP]
back bias
Bulk
FinFET
floating body effect
Memory
title_short Floating body effect on n-channel bulk FinFETs for memory application
title_full Floating body effect on n-channel bulk FinFETs for memory application
title_fullStr Floating body effect on n-channel bulk FinFETs for memory application
title_full_unstemmed Floating body effect on n-channel bulk FinFETs for memory application
title_sort Floating body effect on n-channel bulk FinFETs for memory application
author Andrade, M. G.C. [UNESP]
author_facet Andrade, M. G.C. [UNESP]
Almeida, L. M. [UNESP]
Martino, J. A. [UNESP]
Aoulaiche, M.
Simoen, E.
Claeys, C.
author_role author
author2 Almeida, L. M. [UNESP]
Martino, J. A. [UNESP]
Aoulaiche, M.
Simoen, E.
Claeys, C.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Universidade de São Paulo (USP)
Imec
E. E. Department KU Leuven
dc.contributor.author.fl_str_mv Andrade, M. G.C. [UNESP]
Almeida, L. M. [UNESP]
Martino, J. A. [UNESP]
Aoulaiche, M.
Simoen, E.
Claeys, C.
dc.subject.por.fl_str_mv back bias
Bulk
FinFET
floating body effect
Memory
topic back bias
Bulk
FinFET
floating body effect
Memory
description In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor.
publishDate 2014
dc.date.none.fl_str_mv 2014-01-20
2018-12-11T17:05:53Z
2018-12-11T17:05:53Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/ICCDCS.2014.7016147
2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings.
http://hdl.handle.net/11449/173495
10.1109/ICCDCS.2014.7016147
2-s2.0-84988299629
url http://dx.doi.org/10.1109/ICCDCS.2014.7016147
http://hdl.handle.net/11449/173495
identifier_str_mv 2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings.
10.1109/ICCDCS.2014.7016147
2-s2.0-84988299629
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1803649556191117312

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