Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2
Autor(a) principal: | |
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Data de Publicação: | 2013 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1590/S1516-14392013005000060 http://hdl.handle.net/11449/113513 |
Resumo: | Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transparent oxide, with a high mobility semiconductor. Trivalent rare-earth-doped SnO2 presents very efficient emission in a wide wavelength range, including red (in the case of Eu3+) or blue (Ce3+). The advantage of this structure is the possibility of separation of the rare-earth emission centers, from the electron scattering, leading to an indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films. Monochromatic light excitation shows up the role of the most external layer, which may act as a shield (top GaAs), or an ultraviolet light absorber sink (top RE-doped SnO2). The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels in the semiconductors junction with two-dimensional electron gas (2DEG) behavior, which are evaluated by excitation with distinct monochromatic light sources, where the samples are deposited by varying the order of layer deposition. |
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Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2tin dioxidegallium arsenideheterojunctioninterfaceelectrical conductivityRare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transparent oxide, with a high mobility semiconductor. Trivalent rare-earth-doped SnO2 presents very efficient emission in a wide wavelength range, including red (in the case of Eu3+) or blue (Ce3+). The advantage of this structure is the possibility of separation of the rare-earth emission centers, from the electron scattering, leading to an indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films. Monochromatic light excitation shows up the role of the most external layer, which may act as a shield (top GaAs), or an ultraviolet light absorber sink (top RE-doped SnO2). The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels in the semiconductors junction with two-dimensional electron gas (2DEG) behavior, which are evaluated by excitation with distinct monochromatic light sources, where the samples are deposited by varying the order of layer deposition.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Sao Paulo State Univ UNESP, Dept Phys, Sch Sci, Bauru, SP, BrazilSao Paulo State Univ UNESP, Meteorol Res Inst, Bauru, SP, BrazilSao Paulo State Univ UNESP, Dept Phys, Sch Sci, Bauru, SP, BrazilSao Paulo State Univ UNESP, Meteorol Res Inst, Bauru, SP, BrazilUniv Fed Sao Carlos, Dept Engenharia MaterialsUniversidade Estadual Paulista (Unesp)Bueno, Cristina de Freitas [UNESP]Oliveira Machado, Diego Henrique de [UNESP]Pineiz, Tatiane de Fatima [UNESP]Scalvi, Luis Vicente de Andrade [UNESP]2014-12-03T13:11:45Z2014-12-03T13:11:45Z2013-07-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article831-838application/pdfhttp://dx.doi.org/10.1590/S1516-14392013005000060Materials Research-ibero-american Journal Of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 16, n. 4, p. 831-838, 2013.1516-1439http://hdl.handle.net/11449/11351310.1590/S1516-14392013005000060S1516-14392013005000060WOS:000322727600019S1516-14392013000400019.pdf77307194764512320000-0001-5762-6424Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Research-ibero-american Journal of Materials1.1030,398info:eu-repo/semantics/openAccess2024-04-25T17:39:52Zoai:repositorio.unesp.br:11449/113513Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:25:25.586160Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 |
title |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 |
spellingShingle |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 Bueno, Cristina de Freitas [UNESP] tin dioxide gallium arsenide heterojunction interface electrical conductivity |
title_short |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 |
title_full |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 |
title_fullStr |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 |
title_full_unstemmed |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 |
title_sort |
Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2 |
author |
Bueno, Cristina de Freitas [UNESP] |
author_facet |
Bueno, Cristina de Freitas [UNESP] Oliveira Machado, Diego Henrique de [UNESP] Pineiz, Tatiane de Fatima [UNESP] Scalvi, Luis Vicente de Andrade [UNESP] |
author_role |
author |
author2 |
Oliveira Machado, Diego Henrique de [UNESP] Pineiz, Tatiane de Fatima [UNESP] Scalvi, Luis Vicente de Andrade [UNESP] |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Bueno, Cristina de Freitas [UNESP] Oliveira Machado, Diego Henrique de [UNESP] Pineiz, Tatiane de Fatima [UNESP] Scalvi, Luis Vicente de Andrade [UNESP] |
dc.subject.por.fl_str_mv |
tin dioxide gallium arsenide heterojunction interface electrical conductivity |
topic |
tin dioxide gallium arsenide heterojunction interface electrical conductivity |
description |
Rare-earth doped (Eu3+ or Ce3+) thin layers of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs) films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transparent oxide, with a high mobility semiconductor. Trivalent rare-earth-doped SnO2 presents very efficient emission in a wide wavelength range, including red (in the case of Eu3+) or blue (Ce3+). The advantage of this structure is the possibility of separation of the rare-earth emission centers, from the electron scattering, leading to an indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films. Monochromatic light excitation shows up the role of the most external layer, which may act as a shield (top GaAs), or an ultraviolet light absorber sink (top RE-doped SnO2). The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels in the semiconductors junction with two-dimensional electron gas (2DEG) behavior, which are evaluated by excitation with distinct monochromatic light sources, where the samples are deposited by varying the order of layer deposition. |
publishDate |
2013 |
dc.date.none.fl_str_mv |
2013-07-01 2014-12-03T13:11:45Z 2014-12-03T13:11:45Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1590/S1516-14392013005000060 Materials Research-ibero-american Journal Of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 16, n. 4, p. 831-838, 2013. 1516-1439 http://hdl.handle.net/11449/113513 10.1590/S1516-14392013005000060 S1516-14392013005000060 WOS:000322727600019 S1516-14392013000400019.pdf 7730719476451232 0000-0001-5762-6424 |
url |
http://dx.doi.org/10.1590/S1516-14392013005000060 http://hdl.handle.net/11449/113513 |
identifier_str_mv |
Materials Research-ibero-american Journal Of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 16, n. 4, p. 831-838, 2013. 1516-1439 10.1590/S1516-14392013005000060 S1516-14392013005000060 WOS:000322727600019 S1516-14392013000400019.pdf 7730719476451232 0000-0001-5762-6424 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Research-ibero-american Journal of Materials 1.103 0,398 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
831-838 application/pdf |
dc.publisher.none.fl_str_mv |
Univ Fed Sao Carlos, Dept Engenharia Materials |
publisher.none.fl_str_mv |
Univ Fed Sao Carlos, Dept Engenharia Materials |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128930458107904 |