The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/SBMicro50945.2021.9585769 http://hdl.handle.net/11449/223616 |
Resumo: | In this work, an Al2O3/AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is analyzed and the investigation of its conduction mechanisms is carried out considering different gate to source and gate to drain distances, as well as different source and drain contact depths. The devices can have up to 3 conduction channels, of which two of them are related to the 2DEG formation and one of them depends on field effect on MOS structure. While the HEMT conduction is more influenced by the source and drain contacts depth, the MOS conduction seems to be more affected by the gate to source and gate to drain distances. Each of these conductions influence the total drain current in a different way. |
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Repositório Institucional da UNESP |
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spelling |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations2degAlganAlnDouble conduction mechanismsMoshemtIn this work, an Al2O3/AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is analyzed and the investigation of its conduction mechanisms is carried out considering different gate to source and gate to drain distances, as well as different source and drain contact depths. The devices can have up to 3 conduction channels, of which two of them are related to the 2DEG formation and one of them depends on field effect on MOS structure. While the HEMT conduction is more influenced by the source and drain contacts depth, the MOS conduction seems to be more affected by the gate to source and gate to drain distances. Each of these conductions influence the total drain current in a different way.Sao Paulo State University Unesp, Sao Joao da Boa VistaSao Paulo State University Unesp, Sao Joao da Boa VistaUniversidade Estadual Paulista (UNESP)Canales, Bruno G. [UNESP]Carmo, Genilson J. [UNESP]Agopian, Paula G. D. [UNESP]2022-04-28T19:51:49Z2022-04-28T19:51:49Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro50945.2021.9585769SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices.http://hdl.handle.net/11449/22361610.1109/SBMicro50945.2021.95857692-s2.0-85126126900Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devicesinfo:eu-repo/semantics/openAccess2022-04-28T19:51:49Zoai:repositorio.unesp.br:11449/223616Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T23:50:17.516978Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations |
title |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations |
spellingShingle |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations Canales, Bruno G. [UNESP] 2deg Algan Aln Double conduction mechanisms Moshemt |
title_short |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations |
title_full |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations |
title_fullStr |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations |
title_full_unstemmed |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations |
title_sort |
The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations |
author |
Canales, Bruno G. [UNESP] |
author_facet |
Canales, Bruno G. [UNESP] Carmo, Genilson J. [UNESP] Agopian, Paula G. D. [UNESP] |
author_role |
author |
author2 |
Carmo, Genilson J. [UNESP] Agopian, Paula G. D. [UNESP] |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
Canales, Bruno G. [UNESP] Carmo, Genilson J. [UNESP] Agopian, Paula G. D. [UNESP] |
dc.subject.por.fl_str_mv |
2deg Algan Aln Double conduction mechanisms Moshemt |
topic |
2deg Algan Aln Double conduction mechanisms Moshemt |
description |
In this work, an Al2O3/AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is analyzed and the investigation of its conduction mechanisms is carried out considering different gate to source and gate to drain distances, as well as different source and drain contact depths. The devices can have up to 3 conduction channels, of which two of them are related to the 2DEG formation and one of them depends on field effect on MOS structure. While the HEMT conduction is more influenced by the source and drain contacts depth, the MOS conduction seems to be more affected by the gate to source and gate to drain distances. Each of these conductions influence the total drain current in a different way. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-01-01 2022-04-28T19:51:49Z 2022-04-28T19:51:49Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/SBMicro50945.2021.9585769 SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices. http://hdl.handle.net/11449/223616 10.1109/SBMicro50945.2021.9585769 2-s2.0-85126126900 |
url |
http://dx.doi.org/10.1109/SBMicro50945.2021.9585769 http://hdl.handle.net/11449/223616 |
identifier_str_mv |
SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices. 10.1109/SBMicro50945.2021.9585769 2-s2.0-85126126900 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129557859926016 |