Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1007/s10854-017-6587-1 http://hdl.handle.net/11449/178661 |
Resumo: | BiFeO3 (BFO) and LaFeO3 (LFO) heterostructures were obtained at room temperature on Pt/TiO2/SiO2/Si (100) substrates by chemical solution deposition at a temperature of 500 °C for 2 h. For comparison, the films were also deposited on La0.5Sr0.5CoO3 coated Pt/TiO2/SiO2/Si (100) substrates. The magnetoelectric coefficient measurement was performed to show magnetoelectric coupling behavior of such heterostructures. La0.5Sr0.5CoO3 (LSCO) bottom electrode strongly promotes the formation of high intensity (104) texture of BFO-LFO heterostructures resulting in huge crystal size. The dielectric constants of the films increased from 307 to 400 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10 to 10–10−7 A/cm2 at a voltage of 5 V. Improvement of the P–E hysteresis loop was observed for the heterostructure due the decrease of leakage current caused by the LFO sublayer. Room temperature magnetic coercive field measurements indicate that the magnetic behavior is influenced by the nature of bottom electrode. |
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Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical methodBiFeO3 (BFO) and LaFeO3 (LFO) heterostructures were obtained at room temperature on Pt/TiO2/SiO2/Si (100) substrates by chemical solution deposition at a temperature of 500 °C for 2 h. For comparison, the films were also deposited on La0.5Sr0.5CoO3 coated Pt/TiO2/SiO2/Si (100) substrates. The magnetoelectric coefficient measurement was performed to show magnetoelectric coupling behavior of such heterostructures. La0.5Sr0.5CoO3 (LSCO) bottom electrode strongly promotes the formation of high intensity (104) texture of BFO-LFO heterostructures resulting in huge crystal size. The dielectric constants of the films increased from 307 to 400 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10 to 10–10−7 A/cm2 at a voltage of 5 V. Improvement of the P–E hysteresis loop was observed for the heterostructure due the decrease of leakage current caused by the LFO sublayer. Room temperature magnetic coercive field measurements indicate that the magnetic behavior is influenced by the nature of bottom electrode.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Faculdade de Engenharia de Guaratinguetá Universidade Estadual Paulista (UNESP), Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das ColinasInstituto de Química - Laboratório Interdisciplinar em Cerâmica (LIEC) Universidade Estadual Paulista (UNESP), Rua Professor Francisco Degni s/nFaculdade de Engenharia de Guaratinguetá Universidade Estadual Paulista (UNESP), Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das ColinasInstituto de Química - Laboratório Interdisciplinar em Cerâmica (LIEC) Universidade Estadual Paulista (UNESP), Rua Professor Francisco Degni s/nFAPESP: 2013/07296-2Universidade Estadual Paulista (Unesp)Deus, R. C. [UNESP]Gonçalves, L. F. [UNESP]Cavalcanti, C. C. [UNESP]Rocha, L. S.R. [UNESP]Longo, E. [UNESP]Simões, A. Z. [UNESP]2018-12-11T17:31:32Z2018-12-11T17:31:32Z2017-06-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8630-8642application/pdfhttp://dx.doi.org/10.1007/s10854-017-6587-1Journal of Materials Science: Materials in Electronics, v. 28, n. 12, p. 8630-8642, 2017.1573-482X0957-4522http://hdl.handle.net/11449/17866110.1007/s10854-017-6587-12-s2.0-850134776872-s2.0-85013477687.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Science: Materials in Electronics0,503info:eu-repo/semantics/openAccess2024-12-03T13:47:08Zoai:repositorio.unesp.br:11449/178661Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462024-12-03T13:47:08Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method |
title |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method |
spellingShingle |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method Deus, R. C. [UNESP] |
title_short |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method |
title_full |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method |
title_fullStr |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method |
title_full_unstemmed |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method |
title_sort |
Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method |
author |
Deus, R. C. [UNESP] |
author_facet |
Deus, R. C. [UNESP] Gonçalves, L. F. [UNESP] Cavalcanti, C. C. [UNESP] Rocha, L. S.R. [UNESP] Longo, E. [UNESP] Simões, A. Z. [UNESP] |
author_role |
author |
author2 |
Gonçalves, L. F. [UNESP] Cavalcanti, C. C. [UNESP] Rocha, L. S.R. [UNESP] Longo, E. [UNESP] Simões, A. Z. [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Deus, R. C. [UNESP] Gonçalves, L. F. [UNESP] Cavalcanti, C. C. [UNESP] Rocha, L. S.R. [UNESP] Longo, E. [UNESP] Simões, A. Z. [UNESP] |
description |
BiFeO3 (BFO) and LaFeO3 (LFO) heterostructures were obtained at room temperature on Pt/TiO2/SiO2/Si (100) substrates by chemical solution deposition at a temperature of 500 °C for 2 h. For comparison, the films were also deposited on La0.5Sr0.5CoO3 coated Pt/TiO2/SiO2/Si (100) substrates. The magnetoelectric coefficient measurement was performed to show magnetoelectric coupling behavior of such heterostructures. La0.5Sr0.5CoO3 (LSCO) bottom electrode strongly promotes the formation of high intensity (104) texture of BFO-LFO heterostructures resulting in huge crystal size. The dielectric constants of the films increased from 307 to 400 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10 to 10–10−7 A/cm2 at a voltage of 5 V. Improvement of the P–E hysteresis loop was observed for the heterostructure due the decrease of leakage current caused by the LFO sublayer. Room temperature magnetic coercive field measurements indicate that the magnetic behavior is influenced by the nature of bottom electrode. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-06-01 2018-12-11T17:31:32Z 2018-12-11T17:31:32Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1007/s10854-017-6587-1 Journal of Materials Science: Materials in Electronics, v. 28, n. 12, p. 8630-8642, 2017. 1573-482X 0957-4522 http://hdl.handle.net/11449/178661 10.1007/s10854-017-6587-1 2-s2.0-85013477687 2-s2.0-85013477687.pdf |
url |
http://dx.doi.org/10.1007/s10854-017-6587-1 http://hdl.handle.net/11449/178661 |
identifier_str_mv |
Journal of Materials Science: Materials in Electronics, v. 28, n. 12, p. 8630-8642, 2017. 1573-482X 0957-4522 10.1007/s10854-017-6587-1 2-s2.0-85013477687 2-s2.0-85013477687.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Materials Science: Materials in Electronics 0,503 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
8630-8642 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
repositoriounesp@unesp.br |
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1826304385051787264 |