Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method

Detalhes bibliográficos
Autor(a) principal: Deus, R. C. [UNESP]
Data de Publicação: 2017
Outros Autores: Gonçalves, L. F. [UNESP], Cavalcanti, C. C. [UNESP], Rocha, L. S.R. [UNESP], Longo, E. [UNESP], Simões, A. Z. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/s10854-017-6587-1
http://hdl.handle.net/11449/178661
Resumo: BiFeO3 (BFO) and LaFeO3 (LFO) heterostructures were obtained at room temperature on Pt/TiO2/SiO2/Si (100) substrates by chemical solution deposition at a temperature of 500 °C for 2 h. For comparison, the films were also deposited on La0.5Sr0.5CoO3 coated Pt/TiO2/SiO2/Si (100) substrates. The magnetoelectric coefficient measurement was performed to show magnetoelectric coupling behavior of such heterostructures. La0.5Sr0.5CoO3 (LSCO) bottom electrode strongly promotes the formation of high intensity (104) texture of BFO-LFO heterostructures resulting in huge crystal size. The dielectric constants of the films increased from 307 to 400 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10 to 10–10−7 A/cm2 at a voltage of 5 V. Improvement of the P–E hysteresis loop was observed for the heterostructure due the decrease of leakage current caused by the LFO sublayer. Room temperature magnetic coercive field measurements indicate that the magnetic behavior is influenced by the nature of bottom electrode.
id UNSP_682564a3c57880b4242e0f55a14dc34c
oai_identifier_str oai:repositorio.unesp.br:11449/178661
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical methodBiFeO3 (BFO) and LaFeO3 (LFO) heterostructures were obtained at room temperature on Pt/TiO2/SiO2/Si (100) substrates by chemical solution deposition at a temperature of 500 °C for 2 h. For comparison, the films were also deposited on La0.5Sr0.5CoO3 coated Pt/TiO2/SiO2/Si (100) substrates. The magnetoelectric coefficient measurement was performed to show magnetoelectric coupling behavior of such heterostructures. La0.5Sr0.5CoO3 (LSCO) bottom electrode strongly promotes the formation of high intensity (104) texture of BFO-LFO heterostructures resulting in huge crystal size. The dielectric constants of the films increased from 307 to 400 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10 to 10–10−7 A/cm2 at a voltage of 5 V. Improvement of the P–E hysteresis loop was observed for the heterostructure due the decrease of leakage current caused by the LFO sublayer. Room temperature magnetic coercive field measurements indicate that the magnetic behavior is influenced by the nature of bottom electrode.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Faculdade de Engenharia de Guaratinguetá Universidade Estadual Paulista (UNESP), Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das ColinasInstituto de Química - Laboratório Interdisciplinar em Cerâmica (LIEC) Universidade Estadual Paulista (UNESP), Rua Professor Francisco Degni s/nFaculdade de Engenharia de Guaratinguetá Universidade Estadual Paulista (UNESP), Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das ColinasInstituto de Química - Laboratório Interdisciplinar em Cerâmica (LIEC) Universidade Estadual Paulista (UNESP), Rua Professor Francisco Degni s/nFAPESP: 2013/07296-2Universidade Estadual Paulista (Unesp)Deus, R. C. [UNESP]Gonçalves, L. F. [UNESP]Cavalcanti, C. C. [UNESP]Rocha, L. S.R. [UNESP]Longo, E. [UNESP]Simões, A. Z. [UNESP]2018-12-11T17:31:32Z2018-12-11T17:31:32Z2017-06-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8630-8642application/pdfhttp://dx.doi.org/10.1007/s10854-017-6587-1Journal of Materials Science: Materials in Electronics, v. 28, n. 12, p. 8630-8642, 2017.1573-482X0957-4522http://hdl.handle.net/11449/17866110.1007/s10854-017-6587-12-s2.0-850134776872-s2.0-85013477687.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Science: Materials in Electronics0,503info:eu-repo/semantics/openAccess2024-12-03T13:47:08Zoai:repositorio.unesp.br:11449/178661Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462024-12-03T13:47:08Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
title Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
spellingShingle Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
Deus, R. C. [UNESP]
title_short Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
title_full Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
title_fullStr Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
title_full_unstemmed Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
title_sort Magnetocoupling and domain structure of BiFeO3/ LaFeO3 heterostructures deposited on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method
author Deus, R. C. [UNESP]
author_facet Deus, R. C. [UNESP]
Gonçalves, L. F. [UNESP]
Cavalcanti, C. C. [UNESP]
Rocha, L. S.R. [UNESP]
Longo, E. [UNESP]
Simões, A. Z. [UNESP]
author_role author
author2 Gonçalves, L. F. [UNESP]
Cavalcanti, C. C. [UNESP]
Rocha, L. S.R. [UNESP]
Longo, E. [UNESP]
Simões, A. Z. [UNESP]
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Deus, R. C. [UNESP]
Gonçalves, L. F. [UNESP]
Cavalcanti, C. C. [UNESP]
Rocha, L. S.R. [UNESP]
Longo, E. [UNESP]
Simões, A. Z. [UNESP]
description BiFeO3 (BFO) and LaFeO3 (LFO) heterostructures were obtained at room temperature on Pt/TiO2/SiO2/Si (100) substrates by chemical solution deposition at a temperature of 500 °C for 2 h. For comparison, the films were also deposited on La0.5Sr0.5CoO3 coated Pt/TiO2/SiO2/Si (100) substrates. The magnetoelectric coefficient measurement was performed to show magnetoelectric coupling behavior of such heterostructures. La0.5Sr0.5CoO3 (LSCO) bottom electrode strongly promotes the formation of high intensity (104) texture of BFO-LFO heterostructures resulting in huge crystal size. The dielectric constants of the films increased from 307 to 400 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10 to 10–10−7 A/cm2 at a voltage of 5 V. Improvement of the P–E hysteresis loop was observed for the heterostructure due the decrease of leakage current caused by the LFO sublayer. Room temperature magnetic coercive field measurements indicate that the magnetic behavior is influenced by the nature of bottom electrode.
publishDate 2017
dc.date.none.fl_str_mv 2017-06-01
2018-12-11T17:31:32Z
2018-12-11T17:31:32Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/s10854-017-6587-1
Journal of Materials Science: Materials in Electronics, v. 28, n. 12, p. 8630-8642, 2017.
1573-482X
0957-4522
http://hdl.handle.net/11449/178661
10.1007/s10854-017-6587-1
2-s2.0-85013477687
2-s2.0-85013477687.pdf
url http://dx.doi.org/10.1007/s10854-017-6587-1
http://hdl.handle.net/11449/178661
identifier_str_mv Journal of Materials Science: Materials in Electronics, v. 28, n. 12, p. 8630-8642, 2017.
1573-482X
0957-4522
10.1007/s10854-017-6587-1
2-s2.0-85013477687
2-s2.0-85013477687.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Materials Science: Materials in Electronics
0,503
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 8630-8642
application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv repositoriounesp@unesp.br
_version_ 1826304385051787264