Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
Autor(a) principal: | |
---|---|
Data de Publicação: | 2021 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.physe.2021.114856 http://hdl.handle.net/11449/221896 |
Resumo: | In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO2 and Sb-doped SnO2 (ATO) nanowires, respectively. The energy shift was related to the Burstein-Moss effect taking place in the doped nanowires. We studied the ATO optical bandgap (ΔE = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO2 nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires. |
id |
UNSP_72548e93dbf08c2fbfe6ab65d54a0776 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/221896 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS methodATOBurstein-Moss shiftMetal-insulator transitionNanowiresSingle-nanowire deviceTin dioxideIn this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO2 and Sb-doped SnO2 (ATO) nanowires, respectively. The energy shift was related to the Burstein-Moss effect taking place in the doped nanowires. We studied the ATO optical bandgap (ΔE = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO2 nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)LIEC Instituto de Química Universidade Estadual Paulista - UNESPDepartamento de Física Universidade Federal de São CarlosLIEC Instituto de Química Universidade Estadual Paulista - UNESPCNPq: 150856/2019–9FAPESP: 2013/07296–2FAPESP: 2014/01371–5FAPESP: 2017/23663–6FAPESP: 2019/12383–8CNPq: 305656/2018–0Universidade Estadual Paulista (UNESP)Universidade Federal de São Carlos (UFSCar)Costa, I. M. [UNESP]Cunha, T. R.Cichetto, L.Zaghete, M. A. [UNESP]Chiquito, A. J.2022-04-28T19:41:07Z2022-04-28T19:41:07Z2021-10-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.physe.2021.114856Physica E: Low-Dimensional Systems and Nanostructures, v. 134.1386-9477http://hdl.handle.net/11449/22189610.1016/j.physe.2021.1148562-s2.0-85109110746Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengPhysica E: Low-Dimensional Systems and Nanostructuresinfo:eu-repo/semantics/openAccess2022-04-28T19:41:07Zoai:repositorio.unesp.br:11449/221896Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:13:07.994996Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method |
title |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method |
spellingShingle |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method Costa, I. M. [UNESP] ATO Burstein-Moss shift Metal-insulator transition Nanowires Single-nanowire device Tin dioxide |
title_short |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method |
title_full |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method |
title_fullStr |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method |
title_full_unstemmed |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method |
title_sort |
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method |
author |
Costa, I. M. [UNESP] |
author_facet |
Costa, I. M. [UNESP] Cunha, T. R. Cichetto, L. Zaghete, M. A. [UNESP] Chiquito, A. J. |
author_role |
author |
author2 |
Cunha, T. R. Cichetto, L. Zaghete, M. A. [UNESP] Chiquito, A. J. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) Universidade Federal de São Carlos (UFSCar) |
dc.contributor.author.fl_str_mv |
Costa, I. M. [UNESP] Cunha, T. R. Cichetto, L. Zaghete, M. A. [UNESP] Chiquito, A. J. |
dc.subject.por.fl_str_mv |
ATO Burstein-Moss shift Metal-insulator transition Nanowires Single-nanowire device Tin dioxide |
topic |
ATO Burstein-Moss shift Metal-insulator transition Nanowires Single-nanowire device Tin dioxide |
description |
In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO2 and Sb-doped SnO2 (ATO) nanowires, respectively. The energy shift was related to the Burstein-Moss effect taking place in the doped nanowires. We studied the ATO optical bandgap (ΔE = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO2 nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-10-01 2022-04-28T19:41:07Z 2022-04-28T19:41:07Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.physe.2021.114856 Physica E: Low-Dimensional Systems and Nanostructures, v. 134. 1386-9477 http://hdl.handle.net/11449/221896 10.1016/j.physe.2021.114856 2-s2.0-85109110746 |
url |
http://dx.doi.org/10.1016/j.physe.2021.114856 http://hdl.handle.net/11449/221896 |
identifier_str_mv |
Physica E: Low-Dimensional Systems and Nanostructures, v. 134. 1386-9477 10.1016/j.physe.2021.114856 2-s2.0-85109110746 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Physica E: Low-Dimensional Systems and Nanostructures |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129299193004032 |