Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ICSENS.2018.8630303 http://hdl.handle.net/11449/188709 |
Resumo: | Zinc oxide (ZnO) thin film transistors are well suited to UV sensing application because they absorb predominantly in the UV region due to the wide bandgap (Eg = 3.37 eV) and possess a large exciton binding energy (60 meV) with high radiation hardness. When operated as a transistor, many device performance parameters alter such as threshold Voltage, on-off current and channel mobility. As a result, it is to distinguish between changes in electrical performance induced by UV light and environmental effects that add noise to the sensor performance. In this work, the UV response of zinc oxide thin film transistors (ZnO TFTs) is examined using Taguchi Design of Experiment (DOE) method. By using this multivariate analysis approach, it is possible to reduce the number of calibration tests required for the sensor to accurately assess UV irradiation It is observed that different input conditions (UV power, exposure time, temperature, bias conditions) affect different TFT performance parameters more or less significantly. From the perspective of UV sensing, ON current in the saturation region appears to be the best performance parameter in a ZnO TFT for examining differences in UV exposure. |
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Repositório Institucional da UNESP |
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Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysisRadio frequency sputteringultravioletZnO TFT UV photo sensorZnO thin film transistorZinc oxide (ZnO) thin film transistors are well suited to UV sensing application because they absorb predominantly in the UV region due to the wide bandgap (Eg = 3.37 eV) and possess a large exciton binding energy (60 meV) with high radiation hardness. When operated as a transistor, many device performance parameters alter such as threshold Voltage, on-off current and channel mobility. As a result, it is to distinguish between changes in electrical performance induced by UV light and environmental effects that add noise to the sensor performance. In this work, the UV response of zinc oxide thin film transistors (ZnO TFTs) is examined using Taguchi Design of Experiment (DOE) method. By using this multivariate analysis approach, it is possible to reduce the number of calibration tests required for the sensor to accurately assess UV irradiation It is observed that different input conditions (UV power, exposure time, temperature, bias conditions) affect different TFT performance parameters more or less significantly. From the perspective of UV sensing, ON current in the saturation region appears to be the best performance parameter in a ZnO TFT for examining differences in UV exposure.School of Electronics Bangor UniversityDepartamento de Física Química e Biologia - DFQB Faculdade de Ciência e Tecnologia UNESPDepartamento de Física Química e Biologia - DFQB Faculdade de Ciência e Tecnologia UNESPBangor UniversityUniversidade Estadual Paulista (Unesp)Kumar, DineshGomes, Tiago [UNESP]Alves, Neri [UNESP]Kettle, Jeff2019-10-06T16:16:43Z2019-10-06T16:16:43Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/ICSENS.2018.8630303Proceedings of IEEE Sensors, v. 2018-January.2168-92291930-0395http://hdl.handle.net/11449/18870910.1109/ICSENS.2018.86303032-s2.0-850612451157607651111619269Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengProceedings of IEEE Sensorsinfo:eu-repo/semantics/openAccess2024-06-19T12:46:01Zoai:repositorio.unesp.br:11449/188709Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:30:06.177776Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis |
title |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis |
spellingShingle |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis Kumar, Dinesh Radio frequency sputtering ultraviolet ZnO TFT UV photo sensor ZnO thin film transistor |
title_short |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis |
title_full |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis |
title_fullStr |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis |
title_full_unstemmed |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis |
title_sort |
Understanding UV sensor performance in ZnO TFTs through the application of multivariate analysis |
author |
Kumar, Dinesh |
author_facet |
Kumar, Dinesh Gomes, Tiago [UNESP] Alves, Neri [UNESP] Kettle, Jeff |
author_role |
author |
author2 |
Gomes, Tiago [UNESP] Alves, Neri [UNESP] Kettle, Jeff |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Bangor University Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Kumar, Dinesh Gomes, Tiago [UNESP] Alves, Neri [UNESP] Kettle, Jeff |
dc.subject.por.fl_str_mv |
Radio frequency sputtering ultraviolet ZnO TFT UV photo sensor ZnO thin film transistor |
topic |
Radio frequency sputtering ultraviolet ZnO TFT UV photo sensor ZnO thin film transistor |
description |
Zinc oxide (ZnO) thin film transistors are well suited to UV sensing application because they absorb predominantly in the UV region due to the wide bandgap (Eg = 3.37 eV) and possess a large exciton binding energy (60 meV) with high radiation hardness. When operated as a transistor, many device performance parameters alter such as threshold Voltage, on-off current and channel mobility. As a result, it is to distinguish between changes in electrical performance induced by UV light and environmental effects that add noise to the sensor performance. In this work, the UV response of zinc oxide thin film transistors (ZnO TFTs) is examined using Taguchi Design of Experiment (DOE) method. By using this multivariate analysis approach, it is possible to reduce the number of calibration tests required for the sensor to accurately assess UV irradiation It is observed that different input conditions (UV power, exposure time, temperature, bias conditions) affect different TFT performance parameters more or less significantly. From the perspective of UV sensing, ON current in the saturation region appears to be the best performance parameter in a ZnO TFT for examining differences in UV exposure. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-01-01 2019-10-06T16:16:43Z 2019-10-06T16:16:43Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ICSENS.2018.8630303 Proceedings of IEEE Sensors, v. 2018-January. 2168-9229 1930-0395 http://hdl.handle.net/11449/188709 10.1109/ICSENS.2018.8630303 2-s2.0-85061245115 7607651111619269 |
url |
http://dx.doi.org/10.1109/ICSENS.2018.8630303 http://hdl.handle.net/11449/188709 |
identifier_str_mv |
Proceedings of IEEE Sensors, v. 2018-January. 2168-9229 1930-0395 10.1109/ICSENS.2018.8630303 2-s2.0-85061245115 7607651111619269 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Proceedings of IEEE Sensors |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129078507601920 |