Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating

Detalhes bibliográficos
Autor(a) principal: dos Santos, Stevan B. O. [UNESP]
Data de Publicação: 2019
Outros Autores: Lima, João V. M. [UNESP], Boratto, Miguel H., Scalvi, Luis V. A. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1080/00150193.2019.1621706
http://hdl.handle.net/11449/187998
Resumo: SnO2 thin films doped with Sb5+ and Er3+ were deposited by sol–gel-dip-coating forming the homostructure SnO2:Sb/SnO2:Er, between aluminum contacts. The films were deposited on glass substrates at room temperature and 90 °C. The homostructure showed capacitive behavior as obtained from cyclic voltammetry, and the sample deposited with heated substrate at 90 °C showed a curve similar to a switchable ferroelectric diode, mainly for low scan rates. Heated substrates also lead to device higher transmittance in the near infrared, related to lower electron concentration, but the improvement in the sample quality leads to higher mobility, compensating the lower electron concentration, causing an overall effect of higher conductivity.
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spelling Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coatingantimonydip-coatingerbiumheated substrateTin dioxideSnO2 thin films doped with Sb5+ and Er3+ were deposited by sol–gel-dip-coating forming the homostructure SnO2:Sb/SnO2:Er, between aluminum contacts. The films were deposited on glass substrates at room temperature and 90 °C. The homostructure showed capacitive behavior as obtained from cyclic voltammetry, and the sample deposited with heated substrate at 90 °C showed a curve similar to a switchable ferroelectric diode, mainly for low scan rates. Heated substrates also lead to device higher transmittance in the near infrared, related to lower electron concentration, but the improvement in the sample quality leads to higher mobility, compensating the lower electron concentration, causing an overall effect of higher conductivity.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Department of Physics School of Sciences São Paulo State University (UNESP)Post-Graduate Program in Physics Department of Physics Federal University of Santa Catarina (UFSC)POSMAT–Post-Graduate Program in Materials Science and Technology School of Sciences São Paulo State University (UNESP)Department of Physics School of Sciences São Paulo State University (UNESP)POSMAT–Post-Graduate Program in Materials Science and Technology School of Sciences São Paulo State University (UNESP)FAPESP: 2016/16423-6Universidade Estadual Paulista (Unesp)Universidade Federal de Santa Catarina (UFSC)dos Santos, Stevan B. O. [UNESP]Lima, João V. M. [UNESP]Boratto, Miguel H.Scalvi, Luis V. A. [UNESP]2019-10-06T15:53:54Z2019-10-06T15:53:54Z2019-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10-21http://dx.doi.org/10.1080/00150193.2019.1621706Ferroelectrics, v. 545, n. 1, p. 10-21, 2019.1563-51120015-0193http://hdl.handle.net/11449/18799810.1080/00150193.2019.16217062-s2.0-85071100163Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengFerroelectricsinfo:eu-repo/semantics/openAccess2021-10-23T05:33:21Zoai:repositorio.unesp.br:11449/187998Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:24:53.123234Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
title Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
spellingShingle Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
dos Santos, Stevan B. O. [UNESP]
antimony
dip-coating
erbium
heated substrate
Tin dioxide
title_short Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
title_full Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
title_fullStr Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
title_full_unstemmed Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
title_sort Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating
author dos Santos, Stevan B. O. [UNESP]
author_facet dos Santos, Stevan B. O. [UNESP]
Lima, João V. M. [UNESP]
Boratto, Miguel H.
Scalvi, Luis V. A. [UNESP]
author_role author
author2 Lima, João V. M. [UNESP]
Boratto, Miguel H.
Scalvi, Luis V. A. [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Universidade Federal de Santa Catarina (UFSC)
dc.contributor.author.fl_str_mv dos Santos, Stevan B. O. [UNESP]
Lima, João V. M. [UNESP]
Boratto, Miguel H.
Scalvi, Luis V. A. [UNESP]
dc.subject.por.fl_str_mv antimony
dip-coating
erbium
heated substrate
Tin dioxide
topic antimony
dip-coating
erbium
heated substrate
Tin dioxide
description SnO2 thin films doped with Sb5+ and Er3+ were deposited by sol–gel-dip-coating forming the homostructure SnO2:Sb/SnO2:Er, between aluminum contacts. The films were deposited on glass substrates at room temperature and 90 °C. The homostructure showed capacitive behavior as obtained from cyclic voltammetry, and the sample deposited with heated substrate at 90 °C showed a curve similar to a switchable ferroelectric diode, mainly for low scan rates. Heated substrates also lead to device higher transmittance in the near infrared, related to lower electron concentration, but the improvement in the sample quality leads to higher mobility, compensating the lower electron concentration, causing an overall effect of higher conductivity.
publishDate 2019
dc.date.none.fl_str_mv 2019-10-06T15:53:54Z
2019-10-06T15:53:54Z
2019-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1080/00150193.2019.1621706
Ferroelectrics, v. 545, n. 1, p. 10-21, 2019.
1563-5112
0015-0193
http://hdl.handle.net/11449/187998
10.1080/00150193.2019.1621706
2-s2.0-85071100163
url http://dx.doi.org/10.1080/00150193.2019.1621706
http://hdl.handle.net/11449/187998
identifier_str_mv Ferroelectrics, v. 545, n. 1, p. 10-21, 2019.
1563-5112
0015-0193
10.1080/00150193.2019.1621706
2-s2.0-85071100163
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Ferroelectrics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 10-21
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128807156056064

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