Electrical properties of individual and small ensembles of InAs/InP nanostructures
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1002/pssa.200566109 http://hdl.handle.net/11449/68858 |
Resumo: | We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA. |
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Electrical properties of individual and small ensembles of InAs/InP nanostructuresInAs/InP nanostructuresInAs/InP semiconductor nanostructuresRandom telegraph noise (RTN)Atomic force microscopyElectric conductanceElectric potentialElectric propertiesElectron transitionsSemiconducting indiumThermal effectsNanostructured materialsWe investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.Instituto de Física Gleb Wataghin Universidade Estadual de Campinas, CP 6165, 13083-790, Campinas-SPLaboratório de Sistemas Integráveis Escola Politécnica Universidade de São Paulo, Av. Prof. Luciano Gualberto, Trav.3, 158, 05508-900, São Paulo-SPPenn State University Department of Physics Institute of Materials Science, University Park, PA 16802LaPTec GPM-UNESP, Av. 3 de Março, 511, 18085-180, Sorocaba-SPLaPTec GPM-UNESP, Av. 3 de Março, 511, 18085-180, Sorocaba-SPUniversidade Estadual de Campinas (UNICAMP)Universidade de São Paulo (USP)Institute of Materials ScienceUniversidade Estadual Paulista (Unesp)Vicaro, K. O.Gutiérrez, H. R.Bortoleto, J. R R [UNESP]Nieto, L.Von Zuben, A. A GSeabra, A. C.Schulz, P. A.Cotta, M. A.2014-05-27T11:21:51Z2014-05-27T11:21:51Z2006-05-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject1353-1358http://dx.doi.org/10.1002/pssa.200566109Physica Status Solidi (A) Applications and Materials Science, v. 203, n. 6, p. 1353-1358, 2006.1862-63001862-6319http://hdl.handle.net/11449/6885810.1002/pssa.2005661092-s2.0-33646763887Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengPhysica Status Solidi A: Applications and Materials Science1.7950,6480,648info:eu-repo/semantics/openAccess2021-10-23T21:41:43Zoai:repositorio.unesp.br:11449/68858Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T22:23:10.561028Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Electrical properties of individual and small ensembles of InAs/InP nanostructures |
title |
Electrical properties of individual and small ensembles of InAs/InP nanostructures |
spellingShingle |
Electrical properties of individual and small ensembles of InAs/InP nanostructures Vicaro, K. O. InAs/InP nanostructures InAs/InP semiconductor nanostructures Random telegraph noise (RTN) Atomic force microscopy Electric conductance Electric potential Electric properties Electron transitions Semiconducting indium Thermal effects Nanostructured materials |
title_short |
Electrical properties of individual and small ensembles of InAs/InP nanostructures |
title_full |
Electrical properties of individual and small ensembles of InAs/InP nanostructures |
title_fullStr |
Electrical properties of individual and small ensembles of InAs/InP nanostructures |
title_full_unstemmed |
Electrical properties of individual and small ensembles of InAs/InP nanostructures |
title_sort |
Electrical properties of individual and small ensembles of InAs/InP nanostructures |
author |
Vicaro, K. O. |
author_facet |
Vicaro, K. O. Gutiérrez, H. R. Bortoleto, J. R R [UNESP] Nieto, L. Von Zuben, A. A G Seabra, A. C. Schulz, P. A. Cotta, M. A. |
author_role |
author |
author2 |
Gutiérrez, H. R. Bortoleto, J. R R [UNESP] Nieto, L. Von Zuben, A. A G Seabra, A. C. Schulz, P. A. Cotta, M. A. |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual de Campinas (UNICAMP) Universidade de São Paulo (USP) Institute of Materials Science Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Vicaro, K. O. Gutiérrez, H. R. Bortoleto, J. R R [UNESP] Nieto, L. Von Zuben, A. A G Seabra, A. C. Schulz, P. A. Cotta, M. A. |
dc.subject.por.fl_str_mv |
InAs/InP nanostructures InAs/InP semiconductor nanostructures Random telegraph noise (RTN) Atomic force microscopy Electric conductance Electric potential Electric properties Electron transitions Semiconducting indium Thermal effects Nanostructured materials |
topic |
InAs/InP nanostructures InAs/InP semiconductor nanostructures Random telegraph noise (RTN) Atomic force microscopy Electric conductance Electric potential Electric properties Electron transitions Semiconducting indium Thermal effects Nanostructured materials |
description |
We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA. |
publishDate |
2006 |
dc.date.none.fl_str_mv |
2006-05-01 2014-05-27T11:21:51Z 2014-05-27T11:21:51Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1002/pssa.200566109 Physica Status Solidi (A) Applications and Materials Science, v. 203, n. 6, p. 1353-1358, 2006. 1862-6300 1862-6319 http://hdl.handle.net/11449/68858 10.1002/pssa.200566109 2-s2.0-33646763887 |
url |
http://dx.doi.org/10.1002/pssa.200566109 http://hdl.handle.net/11449/68858 |
identifier_str_mv |
Physica Status Solidi (A) Applications and Materials Science, v. 203, n. 6, p. 1353-1358, 2006. 1862-6300 1862-6319 10.1002/pssa.200566109 2-s2.0-33646763887 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Physica Status Solidi A: Applications and Materials Science 1.795 0,648 0,648 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1353-1358 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
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1808129422579990528 |