Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs

Detalhes bibliográficos
Autor(a) principal: Perina, Welder F.
Data de Publicação: 2019
Outros Autores: Martino, Joao A., Agopian, Paula G. D. [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/SBMicro.2019.8919278
http://hdl.handle.net/11449/198337
Resumo: This paper shows the influence of channel width (WNW) and channel length (L) on intrinsic voltage gain (AV) and on unit-gain frequency (ft) of omega-gate nanowire SOI MOSFET. The ft is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the WNW of 10 nm, which improved transconductance, consequently, improving both AV and ft. This technology showed values of AV around 80 dB and a ft of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).
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spelling Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETsIntrinsic Voltage GainNanowireOmega-gateSOIUnit-gain FrequencyThis paper shows the influence of channel width (WNW) and channel length (L) on intrinsic voltage gain (AV) and on unit-gain frequency (ft) of omega-gate nanowire SOI MOSFET. The ft is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the WNW of 10 nm, which improved transconductance, consequently, improving both AV and ft. This technology showed values of AV around 80 dB and a ft of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).University of Sao Paulo LSI/PSI/USPUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Perina, Welder F.Martino, Joao A.Agopian, Paula G. D. [UNESP]2020-12-12T01:10:02Z2020-12-12T01:10:02Z2019-08-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2019.8919278SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.http://hdl.handle.net/11449/19833710.1109/SBMicro.2019.89192782-s2.0-85077213322Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devicesinfo:eu-repo/semantics/openAccess2021-10-23T10:11:08Zoai:repositorio.unesp.br:11449/198337Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T10:11:08Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
title Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
spellingShingle Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
Perina, Welder F.
Intrinsic Voltage Gain
Nanowire
Omega-gate
SOI
Unit-gain Frequency
title_short Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
title_full Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
title_fullStr Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
title_full_unstemmed Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
title_sort Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
author Perina, Welder F.
author_facet Perina, Welder F.
Martino, Joao A.
Agopian, Paula G. D. [UNESP]
author_role author
author2 Martino, Joao A.
Agopian, Paula G. D. [UNESP]
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Perina, Welder F.
Martino, Joao A.
Agopian, Paula G. D. [UNESP]
dc.subject.por.fl_str_mv Intrinsic Voltage Gain
Nanowire
Omega-gate
SOI
Unit-gain Frequency
topic Intrinsic Voltage Gain
Nanowire
Omega-gate
SOI
Unit-gain Frequency
description This paper shows the influence of channel width (WNW) and channel length (L) on intrinsic voltage gain (AV) and on unit-gain frequency (ft) of omega-gate nanowire SOI MOSFET. The ft is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the WNW of 10 nm, which improved transconductance, consequently, improving both AV and ft. This technology showed values of AV around 80 dB and a ft of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).
publishDate 2019
dc.date.none.fl_str_mv 2019-08-01
2020-12-12T01:10:02Z
2020-12-12T01:10:02Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/SBMicro.2019.8919278
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
http://hdl.handle.net/11449/198337
10.1109/SBMicro.2019.8919278
2-s2.0-85077213322
url http://dx.doi.org/10.1109/SBMicro.2019.8919278
http://hdl.handle.net/11449/198337
identifier_str_mv SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
10.1109/SBMicro.2019.8919278
2-s2.0-85077213322
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1799964774292783104

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