Magnetic interactions of 4f electrons in the topological insulator chalcogenide Bi2Se3

• Autor(a) principal: Souza, J. C.
• Data de Publicação: 2022
• Outros Autores: Carlone, M. [UNESP], Lesseux, G. G., Pizzi, H. B., Freitas, G. S., Urbano, R. R., Venegas, P. A. [UNESP], Pagliuso, P. G.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1103/PhysRevB.106.235109; http://hdl.handle.net/11449/246450

The gap-opening mechanism of a topological insulator, the quantum anomalous Hall effect, and the axion physics are still pressing open questions, and a microscopic viewpoint to further understand the role of magnetism in topology is highly desirable. In this work we have performed a microscopic investigation, by means of electron spin resonance (ESR) along with complementary bulk measurements, on the chalcogenide (Bi1-xGdx)2Se3 (x=0, 0.001, 0.002 and 0.006). Our analysis of the Gd3+ spin dynamics reveals no significant change of the Fermi surface as a function of Gd3+ concentration, which indicates that the 4f magnetism is different from the nonlocal effects induced by transition metal (d electrons) substitutions. Additionally, we observe an unusual evolution of the Gd3+ ESR spectra as a function of the applied magnetic field, which we discuss considering the magnetic interaction between Gd3+4f electrons and impurity centers such as Se vacancies. This interaction would give rise to a local weak antilocalization effect surrounding the Gd3+ ions. Such a mechanism is observable due to particular details of the Gd3+4f electrons' magnetism in this system compared to that of d electrons. Our work points out that rare-earth substitutions in this model topological insulator are a promising path to explore the axion insulating systems.